公开(公告)号：US20040089634A1

公开(公告)日：2004-05-13

申请号：US10694408

申请日：2003-10-27

Applicant: Cabot Microelectronics Corporation

Inventor： Gautam S. Grover ,  Brian L. Mueller ,  Shumin Wang

IPC: H01L021/302

CPC classification number: C09K3/1463 ,  C09G1/02 ,  H01L21/31053

Abstract: A chemical mechanical polishing composition comprising a soluble cerium compound at a pH above 3 and a method to selectively polish a silicon oxide overfill in preference to a silicon nitride film layer in a single step during the manufacture of integrated circuits and semiconductors.

Abstract translation: 包含pH高于3的可溶性铈化合物的化学机械抛光组合物以及在制造集成电路和半导体期间在单步中优选氮化硅膜层选择性地抛光氧化硅过量填充的方法。