公开(公告)号：US20030143848A1

公开(公告)日：2003-07-31

申请号：US10349987

申请日：2003-01-23

Applicant: Cabot Microelectronics Corporation

Inventor： J. Scott Steckenrider ,  Brian L. Mueller

IPC: C09G001/02 ,  C09G001/04 ,  C09G001/00 ,  C08H001/00 ,  C09D001/00 ,  C09C001/68 ,  B24D003/02 ,  C09K003/14 ,  H01L021/302 ,  H01L021/461

CPC classification number: C09K3/1463 ,  C09G1/02 ,  H01L21/3212

Abstract: An aqueous chemical mechanical polishing slurry useful for polishing the polysilicon layer of a semiconductor wafer comprising an aqueous solution of at least one abrasive, and at least one alcoholamine. The slurry preferably has a pH of from about 9.0 to about 10.5 and it includes an optional buffering agent.

公开(公告)号：US20030124852A1

公开(公告)日：2003-07-03

申请号：US10340561

申请日：2003-01-10

Applicant: Cabot Microelectronics Corporation

Inventor： Mingming Fang ,  Brian L. Mueller ,  James A. Dirksen

IPC: H01L021/302 ,  H01L021/461

CPC classification number: C09G1/02 ,  C09K3/1463 ,  G11B5/8404 ,  H01L21/3212

Abstract: A composition and a method for planarizing or polishing a surface with the composition are provided. The composition comprises a liquid carrier, a chemical accelerator, and solids comprising about 5-90 wt. % of fumed metal oxide, and about 10-95 wt. % of abrasive particles, wherein about 90% or more of the abrasive particles (by number) have a particle size no greater than 100 nm. The composition of the present invention is useful in planarizing or polishing a surface with high polishing efficiency, uniformity, and removal rate, with minimal defectivity, such as field loss of underlying structures and topography.

Abstract translation: 提供了一种用该组合物对表面进行平面化或抛光的组合物和方法。 组合物包含液体载体，化学促进剂和包含约5-90wt。 ％的热解金属氧化物，和约10-95wt。 ％的磨料颗粒，其中约90％或更多的磨料颗粒（数量）具有不大于100nm的粒度。 本发明的组合物可用于以高抛光效率，均匀性和去除速率平坦化或抛光表面，并且具有最小的缺陷性，例如下面的结构和形貌的场损失。

公开(公告)号：US20030082998A1

公开(公告)日：2003-05-01

申请号：US10044174

申请日：2002-01-11

Applicant: Cabot Microelectronics Corporation

Inventor： Phillip Carter ,  Gregory H. Bogush ,  Francesco M. De Rege ,  Jeffrey P. Chamberlain ,  David J. Schroeder ,  Brian L. Mueller

IPC: B24B001/00

CPC classification number: C09G1/02 ,  C09K3/1463 ,  C09K3/1472

Abstract: The invention provides a polishing system comprising (a) a liquid carrier, (b) an alkali metal ion, (c) a compound comprising an amine group and at least one polar moiety, wherein the polar moiety contains at least one oxygen atom, and (d) a polishing pad and/or an abrasive, wherein the total ion concentration of the system is above the critical coagulation concentration. The invention also provides a method of planarizing or polishing a composite substrate comprising contacting the substrate with a the aforementioned polishing system or a polishing system comprising (a) a liquid carrier, (b) an alkali metal ion, (c) a compound comprising an amine group and at least one polar moiety, wherein the polar moiety contains at least one oxygen atom, and (d) a polishing pad and/or an abrasive, and polishing at least a portion of the substrate therewith in about 6 hours or less after the polishing system is prepared.

Abstract translation: 本发明提供了一种抛光系统，其包括（a）液体载体，（b）碱金属离子，（c）包含胺基和至少一个极性部分的化合物，其中极性部分含有至少一个氧原子，和 （d）抛光垫和/或研磨剂，其中系统的总离子浓度高于临界凝结浓度。 本发明还提供了一种平面化或抛光复合衬底的方法，包括使衬底与上述抛光系统或抛光系统接触，所述抛光系统或抛光系统包括（a）液体载体，（b）碱金属离子，（c） 胺基团和至少一个极性部分，其中极性部分含有至少一个氧原子，和（d）抛光垫和/或研磨剂，并且在约6小时或更少的时间内在约6小时或更少的时间内研磨至少一部分基材 准备抛光系统。

公开(公告)号：US20040089634A1

公开(公告)日：2004-05-13

申请号：US10694408

申请日：2003-10-27

Applicant: Cabot Microelectronics Corporation

Inventor： Gautam S. Grover ,  Brian L. Mueller ,  Shumin Wang

IPC: H01L021/302

CPC classification number: C09K3/1463 ,  C09G1/02 ,  H01L21/31053

Abstract: A chemical mechanical polishing composition comprising a soluble cerium compound at a pH above 3 and a method to selectively polish a silicon oxide overfill in preference to a silicon nitride film layer in a single step during the manufacture of integrated circuits and semiconductors.

Abstract translation: 包含pH高于3的可溶性铈化合物的化学机械抛光组合物以及在制造集成电路和半导体期间在单步中优选氮化硅膜层选择性地抛光氧化硅过量填充的方法。