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公开(公告)号：US20030153184A1
公开(公告)日：2003-08-14
申请号：US10353512
申请日：2003-01-29
IPC分类号： H01L021/302 , H01L021/461
CPC分类号： H01L21/3212 , C09G1/02
摘要： The invention provides a system for polishing one or more layers of a multi-layer substrate that includes a first metal layer and a second layer comprising (i) a liquid carrier, (ii) at least one oxidizing agent, (iii) at least one polishing additive that increases the rate at which the system polishes at least one layer of the substrate, (iv) at least one stopping compound with a polishing selectivity of the first metal layer:second layer of at least about 30:1, wherein the stopping compound is a cationically charged nitrogen containing compound selected from compounds comprising amines, imines, amides, imides, and mixtures thereof, and (v) a polishing pad and/or an abrasive. The invention also provides a method of polishing a substrate comprising contacting a surface of a substrate with the system and polishing at least a portion of the substrate therewith. Moreover, the invention provides a method for polishing one or more layers of a multi-layer substrate that includes a first metal layer and a second layer comprising (a) contacting the first metal layer with the system, and (b) polishing the first metal layer with the system until at least a portion of the first metal layer is removed from the substrate. Moreover, the present invention provides a composition for polishing one or more layers of a multi-layer substrate that includes a first metal layer and a second layer comprising (i) liquid carrier, (ii) at least one oxidizing agent, (iii) at least one polishing additive that increases the rate at which the system polishes at least one layer of the substrate, (iv) at least one stopping compound with a polishing selectivity of the first metal layer:second layer of at least about 30:1, wherein the stopping compound is a cationically charged nitrogen containing compound selected from compounds comprising amines, imines, amides, imides, and mixtures thereof, to be used with (v) a polishing pad and/or an abrasive.
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公开(公告)号：US20040009671A1
公开(公告)日：2004-01-15
申请号：US10616335
申请日：2003-07-09
IPC分类号： H01L021/302 , H01L021/461
CPC分类号： H01L21/3212 , C09G1/02 , C09K3/1463
摘要： A chemical mechanical polishing slurry comprising an oxidizing agent, a complexing agent, an abrasive, and an optional surfactant, as well as a method for using the chemical mechanical polishing slurry to remove copper alloy, titanium, titanium nitride, tantalum and tantalum nitride containing layers from a substrate. The slurry does not include a separate film-forming agent.
摘要翻译： 包含氧化剂，络合剂，研磨剂和任选的表面活性剂的化学机械抛光浆料以及使用化学机械抛光浆料去除铜合金，钛，氮化钛，钽和氮化钽的层的方法 从底物。 浆料不包括单独的成膜剂。
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公开(公告)号：US20030027499A1
公开(公告)日：2003-02-06
申请号：US10072413
申请日：2002-02-05
IPC分类号： B24B001/00
CPC分类号： G11B23/505 , B24B37/044
摘要： A method for polishing computer rigid disks comprising bringing at least one surface of the rigid disk into contact with a polishing pad and applying a composition to the rigid disk comprising at least one hydroxylamine additive and colloidal silica to give a polished rigid disk.
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公开(公告)号：US20040214443A1
公开(公告)日：2004-10-28
申请号：US10691254
申请日：2003-10-22
发明人： Steven K. Grumbine , Shumin Wang
IPC分类号： H01L021/302 , H01L021/461
CPC分类号： C09G1/02 , C09K3/1463 , C09K3/1472 , H01L21/3212
摘要： Polishing compositions comprising at least one soluble silane compound and at least one abrasive that are useful for polishing substrate surface features.
摘要翻译： 抛光组合物，其包含至少一种可溶性硅烷化合物和至少一种可用于抛光基材表面特征的研磨剂。
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公开(公告)号：US20040209555A1
公开(公告)日：2004-10-21
申请号：US10419580
申请日：2003-04-21
发明人： Fred F. Sun , Bin Lu , Ethan K. Lightle , Shumin Wang
IPC分类号： B24B001/00
CPC分类号： C09G1/02 , C09K3/1463 , H01L21/3212
摘要： The invention provides a method of polishing a substrate, which method comprises the steps of (i) providing a polishing composition, (ii) providing a substrate comprising at least one metal layer, and (iii) abrading at least a portion of the metal layer with the polishing composition to polish the substrate. The polishing composition comprises an abrasive and a liquid carrier, wherein the abrasive comprises metal oxide particles having a surface with a silane compound adhered to a portion thereof and a polymer adhered to the silane compound and wherein the polymer is selected from the group consisting of water-soluble polymers and water-emulsifiable polymers. The invention also provides a polishing composition as described above, wherein the total amount of abrasive particles present in the polishing composition is no greater than about 20% by weight of the polishing composition, and the metal oxide particles do not comprise zirconia.
摘要翻译： 本发明提供一种抛光衬底的方法，该方法包括以下步骤：（i）提供抛光组合物，（ii）提供包括至少一个金属层的衬底，和（iii）研磨金属层的至少一部分 用抛光组合物抛光底物。 抛光组合物包括研磨剂和液体载体，其中磨料包含金属氧化物颗粒，其表面具有粘附到其一部分上的硅烷化合物，和聚合物粘附到硅烷化合物上，并且其中聚合物选自水 可溶性聚合物和水可乳化聚合物。 本发明还提供了如上所述的抛光组合物，其中存在于抛光组合物中的磨料颗粒的总量不大于抛光组合物的约20重量％，并且金属氧化物颗粒不包含氧化锆。
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公开(公告)号：US20040089634A1
公开(公告)日：2004-05-13
申请号：US10694408
申请日：2003-10-27
发明人： Gautam S. Grover , Brian L. Mueller , Shumin Wang
IPC分类号： H01L021/302
CPC分类号： C09K3/1463 , C09G1/02 , H01L21/31053
摘要： A chemical mechanical polishing composition comprising a soluble cerium compound at a pH above 3 and a method to selectively polish a silicon oxide overfill in preference to a silicon nitride film layer in a single step during the manufacture of integrated circuits and semiconductors.
摘要翻译： 包含pH高于3的可溶性铈化合物的化学机械抛光组合物以及在制造集成电路和半导体期间在单步中优选氮化硅膜层选择性地抛光氧化硅过量填充的方法。
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公开(公告)号：US20030170991A1
公开(公告)日：2003-09-11
申请号：US10353542
申请日：2003-01-29
IPC分类号： H01L021/302 , H01L021/461
CPC分类号： C09G1/02
摘要： The invention provides a system for polishing one or more layers of a multi-layer substrate that includes a first metal layer and a second layer comprising (i) a liquid carrier, (ii) at least one oxidizing agent, (iii) at least one polishing additive that increases the rate at which the system polishes at least one layer of the substrate, wherein the polishing additive is selected from the group consisting of pyrophosphates, condensed phosphates, phosphonic acids and salts thereof, amines, amino alcohols, amides, imines, imino acids, nitrites, nitros, thiols, thioesters, thioethers, carbothiolic acids, carbothionic acids, thiocarboxylic acids, thiosalicylic acids, and mixtures thereof, and (iv) a polishing pad and/or an abrasive. The invention also provides a method of polishing a substrate comprising contacting a surface of a substrate with the system and polishing at least a portion of the substrate therewith. Moreover, the invention provides a method for polishing one or more layers of a multi-layer substrate that includes a first metal layer and a second layer comprising (a) contacting the first metal layer with the system, and (b) polishing the first metal layer with the system until at least a portion of the first metal layer is removed from the substrate.
摘要翻译： 本发明提供一种用于抛光多层基底的一层或多层的系统，其包括第一金属层和第二层，所述第二层包括（i）液体载体，（ii）至少一种氧化剂，（iii）至少一种 抛光添加剂，其增加系统抛光至少一层基材的速率，其中抛光添加剂选自焦磷酸盐，缩合磷酸盐，膦酸及其盐，胺，氨基醇，酰胺，亚胺， 亚氨基酸，亚硝酸盐，亚硝基，硫醇，硫酯，硫醚，硫代硫酸，碳硫酸，硫代羧酸，硫代水杨酸及其混合物，和（iv）抛光垫和/或研磨剂。 本发明还提供了抛光衬底的方法，包括使衬底的表面与系统接触并且用衬底的至少一部分抛光。 此外，本发明提供了一种用于抛光一层或多层多层基底的方法，所述多层基底包括第一金属层和第二层，所述第二层包括（a）使所述第一金属层与所述系统接触，和（b）抛光所述第一金属 层，直到第一金属层的至少一部分从衬底去除。
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公开(公告)号：US20040014400A1
公开(公告)日：2004-01-22
申请号：US10199704
申请日：2002-07-19
发明人： Isaac K. Cherian , Jian Zhang , Fred Sun , Shumin Wang , Eric H. Klingenberg
IPC分类号： B24B001/00
CPC分类号： C09G1/02 , H01L21/3212 , H01L21/32134
摘要： The invention provides a polishing system comprising (a) an abrasive, a polishing pad, a means for oxidizing a substrate, or any combination thereof, (b) a conducting polymer having an electrical conductivity of about 10null10 S/cm to about 106 S/cm, and (c) a liquid carrier.
摘要翻译： 本发明提供了一种抛光系统，其包括（a）研磨剂，抛光垫，用于氧化基材的装置或其任何组合，（b）导电聚合物，其导电率为约10 -10 S / cm至 约10 6 S / cm，和（c）液体载体。
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9.发明申请Method of polishing a substrate with a polishing system containing conducting polymer 失效用含有导电聚合物的抛光系统抛光基材的方法公开(公告)号：US20040014398A1
公开(公告)日：2004-01-22
申请号：US10198841
申请日：2002-07-19
发明人： Jian Zhang , Fred Sun , Shumin Wang , Isaac K. Cherian , Eric H. Klingenberg
IPC分类号： B24B007/22 , B24B001/00
CPC分类号： C09K3/1463 , B24B37/00 , H01L21/3212
摘要： The invention provides a method of polishing a substrate comprising (i) contacting a substrate with a polishing system comprising (a) an abrasive, a polishing pad, a means for oxidizing a substrate, or any combination thereof, (b) a conducting polymer having an electrical conductivity of about 10null10 S/cm to about 106 S/cm, and (c) a liquid carrier, and (ii) abrading or removing at least a portion of the substrate to polish the substrate.
摘要翻译： 本发明提供一种抛光衬底的方法，其包括（i）使衬底与抛光系统接触，所述抛光系统包括（a）研磨剂，抛光垫，用于氧化衬底的装置或其任何组合，（b）导电聚合物，其具有 约10 -10 S / cm至约10 6 S / cm的电导率，和（c）液体载体，和（ii）研磨或除去基材的至少一部分以抛光基材。
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公开(公告)号：US20030209522A1
公开(公告)日：2003-11-13
申请号：US10456858
申请日：2003-06-06
IPC分类号： H01L021/304
CPC分类号： C09G1/02 , C09K3/1409 , C09K3/1436 , C09K3/1454 , H01L21/3212
摘要： A polishing composition comprising a dispersion of silane-modified abrasive particles formed by combining at least one metal oxide abrasive having at least one surface metal hydroxide with at least one silane compound and methods for polishing substrate features such as metal features and oxide features using the polishing compositions.
摘要翻译： 一种抛光组合物，其包含通过将至少一种具有至少一种表面金属氢氧化物的至少一种表面金属氢氧化物与至少一种硅烷化合物组合的至少一种金属氧化物磨料形成的硅烷改性磨料颗粒的分散体和使用抛光 组合物。
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