公开(公告)号：US10920107B2

公开(公告)日：2021-02-16

申请号：US16797438

申请日：2020-02-21

Applicant: Cabot Microelectronics Corporation

Inventor： Alexander W. Hains ,  Juyeon Chang ,  Tina C. Li ,  Viet Lam ,  Ji Cui ,  Sarah Brosnan ,  Chul Woo Nam

IPC: C09G1/02 ,  H01L21/3105 ,  H01L21/762

Abstract: The invention provides a chemical-mechanical polishing composition comprising an abrasive, a self-stopping agent, an aqueous carrier, and a cationic polymer. This invention additionally provides a method suitable for polishing a dielectric substrate.

公开(公告)号：US09597768B1

公开(公告)日：2017-03-21

申请号：US14849066

申请日：2015-09-09

Applicant: Cabot Microelectronics Corporation

Inventor： Prativa Pandey ,  Juyeon Chang ,  Brian Reiss

IPC: H01L21/302 ,  H01L21/461 ,  B24B37/04 ,  C09G1/02

CPC classification number: B24B37/044 ,  C08K2003/2213 ,  C09G1/02

Abstract: The invention provides a chemical-mechanical polishing composition comprising, consisting essentially of, or consisting of (a) about 0.01 wt. % to about 1 wt. % of wet-process ceria, (b) about 10 ppm to about 200 ppm of a cationic polymer comprising quaternary amino groups, (c) about 10 ppm to about 2000 ppm of a non-fluorinated nonionic surfactant, (d) an amino acid, and (e) water, wherein the polishing composition has a pH of about 3 to about 8. The invention further provides a method of polishing a substrate with the polishing composition.