公开(公告)号：US20140197356A1

公开(公告)日：2014-07-17

申请号：US14217535

申请日：2014-03-18

Applicant: Cabot Microelectronics Corporation

Inventor： Kevin MOEGGENBORG ,  William Ward ,  Ming-Shih Tsai ,  Francesco De Rege Thesauro

IPC: C09G1/02

CPC classification number: C09G1/02 ,  H01L21/31053 ,  H01L21/3212

Abstract: The present invention provides a chemical-mechanical polishing (CMP) composition suitable for polishing a silicon nitride-containing substrate while suppressing polysilicon removal from the substrate. The composition comprises abrasive particles suspended in an acidic aqueous carrier containing a surfactant comprising an alkyne-diol, an alkyne diol ethoxylate, or a combination thereof. Methods of polishing a semiconductor substrate therewith are also disclosed.

Abstract translation: 本发明提供了一种适于抛光含氮化硅的衬底同时抑制从衬底去除多晶硅的化学机械抛光（CMP）组合物。 该组合物包含悬浮在酸性含水载体中的磨料颗粒，该载体含有包含炔二醇，炔二醇乙氧基化物或其组合的表面活性剂。 还公开了对其半导体衬底进行抛光的方法。