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    Composition for tungsten CMP
    2.
    发明授权
    Composition for tungsten CMP 有权
    钨CMP的组成

    公开(公告)号：US09238754B2

    公开(公告)日：2016-01-19

    申请号：US14203621

    申请日：2014-03-11

    Applicant: Cabot Microelectronics Corporation

    Inventor： Steven Grumbine ,  Jeffrey Dysard ,  Lin Fu ,  William Ward ,  Glenn Whitener

    IPC: C09G1/02 ,  H01L21/306 ,  H01L21/321

    CPC classification number: B24B37/044 ,  C09G1/02 ,  C09K3/1436 ,  C09K3/1463 ,  C23F1/40 ,  H01L21/3212

    Abstract: A chemical mechanical polishing composition for polishing a substrate having a tungsten layer includes a water based liquid carrier, a colloidal silica abrasive dispersed in the liquid carrier and having a permanent positive charge of at least 6 mV, an amine compound in solution in the liquid carrier, and an iron containing accelerator. A method for chemical mechanical polishing a substrate including a tungsten layer includes contacting the substrate with the above described polishing composition, moving the polishing composition relative to the substrate, and abrading the substrate to remove a portion of the tungsten from the substrate and thereby polish the substrate.

    Abstract translation: 一种用于抛光具有钨层的基材的化学机械抛光组合物包括水基液体载体，分散在液体载体中的胶体二氧化硅磨料并具有至少6mV的永久正电荷，液体载体中的溶液中的胺化合物 ，和含铁促进剂。 用于化学机械抛光包括钨层的基材的方法包括使基底与上述抛光组合物接触，使抛光组合物相对于基底移动，并研磨基底以从基底去除一部分钨，从而抛光 基质。

    Composition for tungsten CMP
    5.
    发明授权
    Composition for tungsten CMP 有权
    钨CMP的组成

    公开(公告)号：US09566686B2

    公开(公告)日：2017-02-14

    申请号：US14965168

    申请日：2015-12-10

    Applicant: Cabot Microelectronics Corporation

    Inventor： Steven Grumbine ,  Jeffrey Dysard ,  Lin Fu ,  William Ward ,  Glenn Whitener

    IPC: B24B37/04 ,  C23F1/40 ,  H01L21/321 ,  C09G1/02

    CPC classification number: B24B37/044 ,  C09G1/02 ,  C09K3/1436 ,  C09K3/1463 ,  C23F1/40 ,  H01L21/3212

    Abstract: A chemical mechanical polishing composition for polishing a substrate having a tungsten layer includes a water based liquid carrier, a colloidal silica abrasive dispersed in the liquid carrier and having a permanent positive charge of at least 6 mV, an amine compound in solution in the liquid carrier, and an iron containing accelerator. A method for chemical mechanical polishing a substrate including a tungsten layer includes contacting the substrate with the above described polishing composition, moving the polishing composition relative to the substrate, and abrading the substrate to remove a portion of the tungsten from the substrate and thereby polish the substrate.

    Abstract translation: 一种用于抛光具有钨层的基材的化学机械抛光组合物包括水基液体载体，分散在液体载体中的胶体二氧化硅磨料并具有至少6mV的永久正电荷，液体载体中的溶液中的胺化合物 ，和含铁促进剂。 用于化学机械抛光包括钨层的基材的方法包括使基底与上述抛光组合物接触，使抛光组合物相对于基底移动，并研磨基底以从基底去除一部分钨，从而抛光 基质。

    Composition for tungsten CMP
    6.
    发明授权
    Composition for tungsten CMP 有权
    钨CMP的组成

    公开(公告)号：US09303188B2

    公开(公告)日：2016-04-05

    申请号：US14203647

    申请日：2014-03-11

    Applicant: Cabot Microelectronics Corporation

    Inventor： Steven Grumbine ,  Jeffrey Dysard ,  Lin Fu ,  William Ward ,  Glenn Whitener

    IPC: C09K13/00 ,  C09G1/02 ,  H01L21/306 ,  H01L21/321

    CPC classification number: C09G1/02 ,  C09K3/1436 ,  C09K3/1463 ,  H01L21/30625 ,  H01L21/3212

    Abstract: A chemical mechanical polishing composition for polishing a substrate having a tungsten layer includes a water based liquid carrier, a colloidal silica abrasive dispersed in the liquid carrier and having a permanent positive charge of at least 6 mV, and a polycationic amine compound in solution in the liquid carrier. A method for chemical mechanical polishing a substrate including a tungsten layer includes contacting the substrate with the above described polishing composition, moving the polishing composition relative to the substrate, and abrading the substrate to remove a portion of the tungsten from the substrate and thereby polish the substrate.

    Abstract translation: 用于研磨具有钨层的基材的化学机械抛光组合物包括水基液体载体，分散在液体载体中的具有至少6mV的永久正电荷的胶态二氧化硅磨料和在该溶液中的聚阳离子胺化合物 液体载体。 用于化学机械抛光包括钨层的基材的方法包括使基底与上述抛光组合物接触，使抛光组合物相对于基底移动，并研磨基底以从基底去除一部分钨，从而抛光 基质。

    CMP METHOD FOR SUPPRESSION OF TITANIUM NITRIDE AND TITANIUM/TITANIUM NITRIDE REMOVAL
    7.
    发明申请
    CMP METHOD FOR SUPPRESSION OF TITANIUM NITRIDE AND TITANIUM/TITANIUM NITRIDE REMOVAL 有权
    硝酸钛和钛/硝酸氮去除的CMP方法

    公开(公告)号：US20150221521A1

    公开(公告)日：2015-08-06

    申请号：US14616250

    申请日：2015-02-06

    Applicant: Cabot Microelectronics Corporation

    Inventor： Hui-Fang HOU ,  William Ward ,  Ming-Chih Yeh ,  Chih-Pin Tsai

    IPC: H01L21/3105 ,  C09G1/02 ,  C23F1/26 ,  H01L21/311 ,  H01L21/321

    CPC classification number: C09G1/02 ,  C09K3/1463 ,  C23F3/06 ,  H01L21/31053 ,  H01L21/31058 ,  H01L21/3212

    Abstract: A chemical mechanical polishing (CMP) method for removal of a metal layer deposited over a titanium nitride (TiN) or titanium/titanium nitride (Ti/TiN) barrier layer is described herein. The method comprises abrading the metal layer with an acidic CMP composition to expose the underlying TiN or Ti/TiN layer, wherein the TiN or Ti/N layer is polished at a low rate due to the presence of a surfactant inhibitor. The acidic CMP composition comprises a particulate abrasive (e.g., silica, alumina) suspended in a liquid carrier containing a surfactant selected from the group consisting of an anionic surfactant, a nonionic surfactant, cation surfactants, and a combination thereof.

    Abstract translation: 本文描述了用于去除沉积在氮化钛（TiN）或钛/氮化钛（Ti / TiN）阻挡层上的金属层的化学机械抛光（CMP）方法。 该方法包括用酸性CMP组合物研磨金属层以暴露下面的TiN或Ti / TiN层，其中由于表面活性剂抑制剂的存在，TiN或Ti / N层以低速率抛光。 酸性CMP组合物包含悬浮在含有选自阴离子表面活性剂，非离子表面活性剂，阳离子表面活性剂及其组合的表面活性剂的液体载体中的颗粒磨料（例如二氧化硅，氧化铝）。

    CMP COMPOSITIONS AND METHODS FOR SUPPRESSING POLYSILICON REMOVAL RATES
    8.
    发明申请
    CMP COMPOSITIONS AND METHODS FOR SUPPRESSING POLYSILICON REMOVAL RATES 审中-公开
    用于抑制多晶硅去除速率的CMP组合物和方法

    公开(公告)号：US20140197356A1

    公开(公告)日：2014-07-17

    申请号：US14217535

    申请日：2014-03-18

    Applicant: Cabot Microelectronics Corporation

    Inventor： Kevin MOEGGENBORG ,  William Ward ,  Ming-Shih Tsai ,  Francesco De Rege Thesauro

    IPC: C09G1/02

    CPC classification number: C09G1/02 ,  H01L21/31053 ,  H01L21/3212

    Abstract: The present invention provides a chemical-mechanical polishing (CMP) composition suitable for polishing a silicon nitride-containing substrate while suppressing polysilicon removal from the substrate. The composition comprises abrasive particles suspended in an acidic aqueous carrier containing a surfactant comprising an alkyne-diol, an alkyne diol ethoxylate, or a combination thereof. Methods of polishing a semiconductor substrate therewith are also disclosed.

    Abstract translation: 本发明提供了一种适于抛光含氮化硅的衬底同时抑制从衬底去除多晶硅的化学机械抛光（CMP）组合物。 该组合物包含悬浮在酸性含水载体中的磨料颗粒，该载体含有包含炔二醇，炔二醇乙氧基化物或其组合的表面活性剂。 还公开了对其半导体衬底进行抛光的方法。

    Mixed abrasive tungsten CMP composition
    9.
    发明授权
    Mixed abrasive tungsten CMP composition 有权
    混合研磨钨CMP组成

    公开(公告)号：US09303190B2

    公开(公告)日：2016-04-05

    申请号：US14222736

    申请日：2014-03-24

    Applicant: Cabot Microelectronics Corporation

    Inventor： William Ward ,  Glenn Whitener ,  Steven Grumbine ,  Jeffrey Dysard

    IPC: C09G1/00 ,  C09G1/02 ,  H01L21/321 ,  C09G1/04 ,  H01L21/306

    CPC classification number: C09G1/02 ,  C09G1/04 ,  H01L21/30625 ,  H01L21/3212

    Abstract: A chemical mechanical polishing composition for polishing a substrate having a tungsten layer includes a water based liquid carrier, first and second colloidal silica abrasives dispersed in the liquid carrier, and an iron containing accelerator. The first colloidal silica abrasive and the second colloidal silica abrasive each have a permanent positive charge of at least 10 mV. An average particle size of the second silica abrasive is at least 20 nanometers greater than an average particle size of the first silica abrasive. A method for chemical mechanical polishing a substrate including a tungsten layer is further disclosed. The method may include contacting the substrate with the above described polishing composition, moving the polishing composition relative to the substrate, and abrading the substrate to remove a portion of the tungsten from the substrate and thereby polish the substrate.

    Abstract translation: 用于研磨具有钨层的基材的化学机械抛光组合物包括水基液体载体，分散在液体载体中的第一和第二胶体二氧化硅研磨剂和含铁促进剂。 第一胶体二氧化硅研磨剂和第二胶态二氧化硅磨料各自具有至少10mV的永久正电荷。 第二硅石研磨剂的平均粒度比第一二氧化硅研磨剂的平均粒径大至少20纳米。 还公开了一种用于化学机械研磨包括钨层的衬底的方法。 该方法可以包括使基底与上述抛光组合物接触，使抛光组合物相对于基底移动，并研磨基底以从基底去除一部分钨，从而抛光基底。

    Composition for tungsten CMP
    10.
    发明授权
    Composition for tungsten CMP 有权
    钨CMP的组成

    公开(公告)号：US09303189B2

    公开(公告)日：2016-04-05

    申请号：US14203693

    申请日：2014-03-11

    Applicant: Cabot Microelectronics Corporation

    Inventor： Steven Grumbine ,  Jeffrey Dysard ,  Lin Fu ,  William Ward ,  Glenn Whitener

    IPC: C09K13/00 ,  C09G1/02 ,  H01L21/321

    CPC classification number: C09G1/02 ,  C09K3/1436 ,  C09K3/1463 ,  H01L21/3212

    Abstract: A chemical mechanical polishing composition for polishing a substrate having a tungsten layer includes a water based liquid carrier, a colloidal silica abrasive dispersed in the liquid carrier and having a permanent positive charge of at least 6 mV, an amine containing polymer in solution in the liquid carrier, and an iron containing accelerator. A method for chemical mechanical polishing a substrate including a tungsten layer includes contacting the substrate with the above described polishing composition, moving the polishing composition relative to the substrate, and abrading the substrate to remove a portion of the tungsten from the substrate and thereby polish the substrate.

    Abstract translation: 用于研磨具有钨层的基材的化学机械抛光组合物包括水基液体载体，分散在液体载体中的具有永久正电荷至少6mV的胶体二氧化硅磨料，液体溶液中的含胺聚合物 载体和含铁促进剂。 用于化学机械抛光包括钨层的基材的方法包括使基底与上述抛光组合物接触，使抛光组合物相对于基底移动，并研磨基底以从基底去除一部分钨，从而抛光 基质。

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