METHOD FOR IMPROVED UTILIZATION OF SEMICONDUCTOR MATERIAL
    3.
    发明申请
    METHOD FOR IMPROVED UTILIZATION OF SEMICONDUCTOR MATERIAL 审中-公开
    改善半导体材料利用的方法

    公开(公告)号:US20100029022A1

    公开(公告)日:2010-02-04

    申请号:US12025253

    申请日:2008-02-04

    IPC分类号: H01L21/66 H01L21/67

    CPC分类号: H01L21/78

    摘要: In a method for producing semiconductor components, in which chips are structured, tested, and isolated into dies on a wafer, in the event of a wafer being broken during the method, undamaged chips of a fragment of the wafer delimited by at least one edge section and at least one fracture contour are processed further as usual. The method has the result that the yield of usable chips is significantly increased in relation to the discarding and disposal of broken wafers provided in the prior art. The average production costs of electronic components and the loss of valuable semiconductor materials and the costs for the disposal of the fragments viewed as discards up to this point are thus significantly reduced.

    摘要翻译: 在制造半导体部件的方法中,其中芯片被构造,测试和分离到晶片上的管芯中,在该方法期间晶片破裂的情况下,由至少一个边缘限定晶片片段的未损坏的芯片 截面和至少一个断裂轮廓像往常一样进一步处理。 该方法的结果是,相对于现有技术中提供的破碎晶片的丢弃和处理,可用芯片的产量显着增加。 因此,电子元件的平均生产成本和有价值的半导体材料的损失以及被视为丢弃的片段的处理成本至今为止大大降低。