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公开(公告)号：US11914289B2
公开(公告)日：2024-02-27
申请号：US17140340
申请日：2021-01-04
Applicant: Carl Zeiss SMS Ltd.
Inventor： Joachim Welte , Uri Stern , Kujan Gorhad , Vladimir Dmitriev
CPC classification number: G03F1/84 , G01N2201/06113 , G01N2201/062 , G03F1/80
Abstract: The present invention refers to a method for determining an effect of one or more of pixels to be introduced into a substrate of a photolithographic mask, the photolithographic mask having one or more pattern elements, wherein the one or more pixels serve to at least partly correct one or more errors of the photolithographic mask, the method comprising: determining the effect of the one or more introduced pixels by determining a change in birefringence of the substrate of the photolithographic mask having the one or more pattern elements.
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Patent Agency Ranking
2.发明公开公开(公告)号：US20240280892A1
公开(公告)日：2024-08-22
申请号：US18443486
申请日：2024-02-16
Applicant: Carl Zeiss SMS Ltd.
Inventor： Vladimir Dmitriev , Avi Cohen , Kujan Gorhad , Hani Zeidan
CPC classification number: G03F1/36 , G03F1/72 , G03F7/70508
Abstract: The present invention relates to a method for correcting placement errors in a photolithographic mask comprising a substrate and structures formed on the substrate, the method involving at least one local density change, preferably a plurality of local density changes, each of which defines a pixel, being introduced into the substrate by use of a laser beam in order to correct placement errors of the structures, wherein in an examination step, an incidence surface of the mask, via which the laser beam radiates into the substrate, is examined for contaminations and, in regions in which a contamination of the incidence surface has been ascertained in the examination step, no laser irradiation or a laser irradiation with at least one changed laser beam parameter takes place, the laser beam parameter(s) being changed such that no damage to the incidence surface or near-surface regions occurs in the case of an interaction between laser beam and contamination.
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3.发明申请公开(公告)号：US20190107783A1
公开(公告)日：2019-04-11
申请号：US16152784
申请日：2018-10-05
Applicant: Carl Zeiss SMT GmbH , Carl Zeiss SMS Ltd.
Inventor： Thomas Thaler , Joachim Welte , Kujan Gorhad , Vladimir Dmitriev , Ute Buttgereit , Thomas Scheruebl , Yuval Perets
IPC: G03F7/20
Abstract: The invention relates to a method for correcting the critical dimension uniformity of a photomask for semiconductor lithography, comprising the following steps: determining a transfer coefficient as a calibration parameter, correcting the photomask by writing pixel fields, verifying the photomask corrected thus, wherein a transfer coefficient is used for verifying the corrected photomask, said transfer coefficient being obtained from a measured scattering function of pixel fields.
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公开(公告)号：US11366383B2
公开(公告)日：2022-06-21
申请号：US16589515
申请日：2019-10-01
Applicant: Carl Zeiss SMS Ltd.
Inventor： Vladimir Dmitriev , Kujan Gorhad , Joachim Welte , Tanya Serzhanyuk
Abstract: The present invention refers to a method and an apparatus for determining positions of a plurality of pixels to be introduced into a substrate of a photolithographic mask by use of a laser system, wherein the pixels serve to at least partly correct one or more errors of the photolithographic mask. The method comprises the steps: (a) obtaining error data associated with the one or more errors; (b) obtaining first parameters of an illumination system, the first parameters determining an illumination of the photolithographic mask of the illumination system when processing a wafer by illuminating with the illumination system using the photolithographic mask; and (c) determining the positions of the plurality of pixels based on the error data and the first parameters.
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公开(公告)号：US20210124259A1
公开(公告)日：2021-04-29
申请号：US17140340
申请日：2021-01-04
Applicant: Carl Zeiss SMS Ltd.
Inventor： Joachim Welte , Uri Stern , Kujan Gorhad , Vladimir Dmitriev
Abstract: The present invention refers to a method for determining an effect of one or more of pixels to be introduced into a substrate of a photolithographic mask, the photolithographic mask having one or more pattern elements, wherein the one or more pixels serve to at least partly correct one or more errors of the photolithographic mask, the method comprising: determining the effect of the one or more introduced pixels by determining a change in birefringence of the substrate of the photolithographic mask having the one or more pattern elements.
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6.发明授权公开(公告)号：US10578975B2
公开(公告)日：2020-03-03
申请号：US16152784
申请日：2018-10-05
Applicant: Carl Zeiss SMT GmbH , Carl Zeiss SMS Ltd.
Inventor： Thomas Thaler , Joachim Welte , Kujan Gorhad , Vladimir Dmitriev , Ute Buttgereit , Thomas Scheruebl , Yuval Perets
IPC: G03F7/20
Abstract: The invention relates to a method for correcting the critical dimension uniformity of a photomask for semiconductor lithography, comprising the following steps: determining a transfer coefficient as a calibration parameter, correcting the photomask by writing pixel fields, verifying the photomask corrected thus, wherein a transfer coefficient is used for verifying the corrected photomask, said transfer coefficient being obtained from a measured scattering function of pixel fields.
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