公开(公告)号：US06323128B1

公开(公告)日：2001-11-27

申请号：US09320499

申请日：1999-05-26

申请人： Carlos Juan Sambucetti ,  Judith Marie Rubino ,  Daniel Charles Edelstein ,  Cyryl Cabral, Jr. ,  George Frederick Walker ,  John G Gaudiello ,  Horatio Seymour Wildman

发明人： Carlos Juan Sambucetti ,  Judith Marie Rubino ,  Daniel Charles Edelstein ,  Cyryl Cabral, Jr. ,  George Frederick Walker ,  John G Gaudiello ,  Horatio Seymour Wildman

IPC分类号： H01L21441

CPC分类号： H01L21/76846 ,  C23C18/1651 ,  C23C18/1841 ,  C23C18/44 ,  C23C18/50 ,  H01L21/288 ,  H01L21/76849 ,  H01L21/76858 ,  H01L21/76864 ,  H01L21/76874 ,  H01L2221/1089 ,  H01L2924/0002 ,  H01L2924/00

摘要： A method for forming a quaternary alloy film of Co—W—P—Au for use as a diffusion barrier layer on a copper interconnect in a semiconductor structure and devices formed incorporating such film are disclosed. In the method, a substrate that has copper conductive regions on top is first pre-treated by two separate pre-treatment steps. In the first step, the substrate is immersed in a H2SO4 rinsing solution and next in a solution containing palladium ions for a length of time sufficient for the ions to deposit on the surface of the copper conductive regions. The substrate is then immersed in a solution that contains at least 15 gr/l sodium citrate or EDTA for removing excess palladium ions from the surface of the copper conductive regions. After the pre-treated substrate is rinsed in a first rinsing step by distilled water, the substrate is electroless plated a Co—W—P film on the surfaces of the copper conductive regions in a first plating solution that contains cobalt ions, tungstate ions, citrate ions and a reducing agent. After the substrate coated with the Co—W—P film is rinsed in a second rinsing step by distilled water, the substrate is immersed in a second electroless plating solution for depositing a Au layer on top of the Co—W—P film. The present invention novel quaternary alloy film can be used as an effective diffusion barrier layer between a copper interconnect and silicon substrate or SiO2 dielectric layers.

摘要翻译： 公开了一种用于在半导体结构中的铜互连上用作扩散阻挡层的Co-W-P-Au的四元合金膜的形成方法和包含这种膜的器件。 在该方法中，首先通过两个单独的预处理步骤对具有铜导电区域的基板进行预处理。 在第一步骤中，将衬底浸入H 2 SO 4冲洗溶液中，接着在含有钯离子的溶液中浸渍一段足以使离子沉积在铜导电区域表面上的时间。 然后将基底浸入含有至少15g / l柠檬酸钠或EDTA的溶液中，以从铜导电区域的表面除去过量的钯离子。 在通过蒸馏水在第一冲洗步骤中冲洗预处理的基材之后，在包含钴离子，钨酸根离子，柠檬酸根离子的第一电镀液中，在铜导电区域的表面上化学镀Co-WP膜 和还原剂。 在用Co-W-P膜涂布的基材在第二次漂洗步骤中用蒸馏水冲洗后，将基板浸渍在Co-W-P膜顶部沉积Au层的第二无电镀液中。 本发明的新型四元合金膜可以用作铜互连和硅衬底或SiO 2电介质层之间的有效扩散阻挡层。

公开(公告)号：US06646345B2

公开(公告)日：2003-11-11

申请号：US09966629

申请日：2001-09-27

申请人： Carlos Juan Sambucetti ,  Judith Marie Rubino ,  Daniel Charles Edelstein ,  Cyryl Cabral, Jr. ,  George Frederick Walker ,  John G Gaudiello ,  Horatio Seymour Wildman

发明人： Carlos Juan Sambucetti ,  Judith Marie Rubino ,  Daniel Charles Edelstein ,  Cyryl Cabral, Jr. ,  George Frederick Walker ,  John G Gaudiello ,  Horatio Seymour Wildman

IPC分类号： H01L2348

CPC分类号： H01L21/76846 ,  C23C18/1651 ,  C23C18/1841 ,  C23C18/44 ,  C23C18/50 ,  H01L21/288 ,  H01L21/76849 ,  H01L21/76858 ,  H01L21/76864 ,  H01L21/76874 ,  H01L2221/1089 ,  H01L2924/0002 ,  H01L2924/00

摘要： A method for forming a quaternary alloy film of Co—W—P—Au for use as a diffusion barrier layer on a copper interconnect in a semiconductor structure and devices formed incorporating such film are disclosed. In the method, a substrate that has copper conductive regions on top is first pre-treated by two separate pre-treatment steps. In the first step, the substrate is immersed in a H2SO4 rinsing solution and next in a solution containing palladium ions for a length of time sufficient for the ions to deposit on the surface of the copper conductive regions. The substrate is then immersed in a solution that contains at least 15 gr/l sodium citrate or EDTA for removing excess palladium ions from the surface of the copper conductive regions. After the pre-treated substrate is rinsed in a first rinsing step by distilled water, the substrate is electroless plated a Co—W—P film on the surfaces of the copper conductive regions in a first plating solution that contains cobalt ions, tungstate ions, citrate ions and a reducing agent. After the substrate coated with the Co—W—P film is rinsed in a second rinsing step by distilled water, the substrate is immersed in a second electroless plating solution for depositing a Au layer on top of the Co—W—P film. The present invention novel quaternary alloy film can be used as an effective diffusion barrier layer between a copper interconnect and silicon substrate or SiO2 dielectric layers.