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公开(公告)号：US4965806A
公开(公告)日：1990-10-23
申请号：US366398
申请日：1989-06-15
CPC分类号： H01S5/20 , H01S5/0261 , H01S5/068 , H01S5/4031 , H01S5/0612 , H01S5/06804 , H01S5/06837 , H01S5/2036
摘要： A broad-area semiconductor laser diode includes an active lasing region interposed between an upper and a lower cladding layer, the laser diode further comprising structure for controllably varying a lateral refractive index profile of the diode to substantially compensate for an effect of junction heating during operation. In embodiments disclosed the controlling structure comprises resistive heating strips or non-radiative linear junctions disposed parallel to the active region. Another embodiment discloses a multi-layered upper cladding region selectively disordered by implanted or diffused dopant impurities. Still another embodiment discloses an upper cladding layer of variable thickness that is convex in shape and symmetrically disposed about a central axis of the active region. The teaching of the invention is also shown to be applicable to arrays of semiconductor laser diodes.
摘要翻译： 广域半导体激光二极管包括插入在上包层和下包层之间的有源激光区域，激光二极管还包括用于可控地改变二极管的横向折射率分布的结构，以大体上补偿在操作期间结加热的影响 。 在所公开的实施例中，控制结构包括平行于有源区域布置的电阻加热带或非辐射线性结。 另一实施例公开了一种由注入或扩散的掺杂杂质选择性地紊乱的多层上覆层区域。 另一个实施例公开了一种可变厚度的上包层，其形状为凸起并且围绕活动区域的中心轴线对称设置。 本发明的教导也被证明适用于半导体激光二极管阵列。
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公开(公告)号：US4995047A
公开(公告)日：1991-02-19
申请号：US400621
申请日：1989-08-30
CPC分类号： H01S5/4031 , H01S5/4006 , H01S5/06243
摘要： A continuous wave integrated injection-locked high-power diode laser array is provided with an on-chip independently-controlled master laser. The integrated injection locked high-power diode laser array is capable of continuous wave lasing in a single near-diffraction limited output beam at single-facet power levels up to 125 mW (250 mW total). Electronic steering of the array emission over an angle of 0.5 degrees is obtained by varying current to the master laser. The master laser injects a laser beam into the slave array by reflection of a rear facet.
摘要翻译： 连续波集成注入锁定大功率二极管激光器阵列具有片上独立控制的主激光器。 集成注入锁定的大功率二极管激光器阵列能够在高达125 mW（总共250 mW）的单面功率水平下，在单个近衍射限制输出光束中连续波浪激光。 通过改变主激光器的电流，获得0.5度角的阵列发射的电子转向。 主激光器通过后面的反射将激光束注入到从阵列中。
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公开(公告)号：US4751705A
公开(公告)日：1988-06-14
申请号：US916344
申请日：1986-10-07
CPC分类号： H01S5/4031 , H01S5/0014 , H01S5/4006 , H01S5/06243 , H01S5/4075
摘要： By optically injecting a single end-element of a semiconductor laser array, both the spatial and spectral emission characteristics of the entire laser array is controlled. With the output of the array locked, the far-field emission angle of the array is continuously scanned over several degrees by varying the injection frequency.
摘要翻译： 通过光学注入半导体激光器阵列的单个端元件，可以控制整个激光器阵列的空间和光谱发射特性。 随着阵列的输出被锁定，阵列的远场发射角通过改变喷射频率在数度上连续扫描。
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公开(公告)号：US4791633A
公开(公告)日：1988-12-13
申请号：US101535
申请日：1987-09-28
申请人： Peter Esherick , Adelbert Owyoung
发明人： Peter Esherick , Adelbert Owyoung
CPC分类号： H01S3/10092 , H01S3/025 , H01S3/08036 , H01S3/10061 , H01S3/102 , H01S3/11 , H01S3/1394
摘要： A system for locking two Nd:YAG laser oscillators includes an optical path for feeding the output of one laser into the other with different polarizations. Elliptical polarization is incorporated into the optical path so that the change in polarization that occurs when the frequencies coincide may be detected to provide a feedback signal to control one laser relative to the other.
摘要翻译： 用于锁定两个Nd：YAG激光振荡器的系统包括用于将一个激光器的输出馈送到具有不同偏振的另一个的光路。 椭圆偏振被并入到光路中，使得可以检测到当频率重合时发生的偏振变化以提供反馈信号以相对于另一个激光来控制一个激光。
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