Vertical-cavity surface-emitting laser device
    1.
    发明授权
    Vertical-cavity surface-emitting laser device 失效
    垂直腔表面发射激光器件

    公开(公告)号:US5903590A

    公开(公告)日:1999-05-11

    申请号:US650242

    申请日:1996-05-20

    IPC分类号: H01S5/183 H01S3/19

    摘要: A vertical-cavity surface-emitting laser device. The vertical-cavity surface-emitting laser (VCSEL) device comprises one or more VCSELs with each VCSEL having a mode-control region thereabout, with the mode-control region forming an optical cavity with an effective cavity length different from the effective cavity length within each VCSEL. Embodiments of the present invention can be formed as single VCSELs and as one- or two-dimensional arrays of VCSELs, with either an index-guided mode of operation or an index anti-guided mode of operation being defined by a sign of the difference in the two effective cavity lengths.

    摘要翻译: 垂直腔表面发射激光器件。 垂直腔表面发射激光器(VCSEL)器件包括一个或多个VCSEL,其中每个VCSEL在其周围具有模式控制区域,其中模式控制区域形成具有与有效腔长度不同的有效腔长度的光腔 每个VCSEL。 本发明的实施例可以形成为单个VCSEL和作为VCSEL的一维或二维阵列,其中索引引导操作模式或指数反向引导操作模式由差异的符号定义 两个有效的腔长度。

    Microfabricated bragg waveguide
    2.
    发明授权
    Microfabricated bragg waveguide 有权
    微型布拉格波导

    公开(公告)号:US06807353B1

    公开(公告)日:2004-10-19

    申请号:US10025447

    申请日:2001-12-19

    IPC分类号: G02B600

    摘要: A microfabricated Bragg waveguide of semiconductor-compatible material having a hollow core and a multilayer dielectric cladding can be fabricated by integrated circuit technologies. The microfabricated Bragg waveguide can comprise a hollow channel waveguide or a hollow fiber. The Bragg fiber can be fabricated by coating a sacrificial mandrel or mold with alternating layers of high- and low-refractive-index dielectric materials and then removing the mandrel or mold to leave a hollow tube with a multilayer dielectric cladding. The Bragg channel waveguide can be fabricated by forming a trench embedded in a substrate and coating the inner wall of the trench with a multilayer dielectric cladding. The thicknesses of the alternating layers can be selected to satisfy the condition for minimum radiation loss of the guided wave.

    摘要翻译: 具有中空芯和多层电介质包层的半导体兼容材料的微细布拉格波导可以通过集成电路技术制造。 微细布拉格波导可以包括中空通道波导或中空纤维。 布拉格光纤可以通过涂覆具有交替层的高折射率和低折射率介电材料的牺牲心轴或模具来制造,然后去除心轴或模具以留下具有多层电介质包层的中空管。 布拉格通道波导可以通过在衬底中形成沟槽并用多层电介质覆层涂覆沟槽的内壁来制造。 可以选择交替层的厚度以满足导波的最小辐射损耗的条件。

    Package for integrated optic circuit and method
    3.
    发明授权
    Package for integrated optic circuit and method 失效
    集成光电路和方法的封装

    公开(公告)号:US5790730A

    公开(公告)日:1998-08-04

    申请号:US336902

    申请日:1994-11-10

    IPC分类号: G02B6/12 G02B6/30 G02B6/36

    摘要: A structure and method for packaging an integrated optic circuit. The package comprises a first wall having a plurality of microlenses formed therein to establish channels of optical communication with an integrated optic circuit within the package. A first registration pattern is provided on an inside surface of one of the walls of the package for alignment and attachment of the integrated optic circuit. The package in one embodiment may further comprise a fiber holder for aligning and attaching a plurality of optical fibers to the package and extending the channels of optical communication to the fibers outside the package. In another embodiment, a fiber holder may be used to hold the fibers and align the fibers to the package. The fiber holder may be detachably connected to the package.

    摘要翻译: 一种用于封装集成光电路的结构和方法。 封装包括第一壁,其具有形成在其中的多个微透镜,以建立与封装内的集成光电路的光通信通道。 在封装的一个壁的内表面上提供第一配准图案,用于对齐和附接集成光电路。 在一个实施例中的包装可以进一步包括纤维保持器,用于将多个光纤对准和附​​接到包装并且将光通信通道延伸到包装外部的纤维。 在另一个实施例中,纤维保持器可用于保持纤维并使纤维对准包装。 纤维保持器可以可拆卸地连接到包装。

    Integrated optical XY coupler
    4.
    发明授权
    Integrated optical XY coupler 失效
    集成光学XY耦合器

    公开(公告)号:US5627929A

    公开(公告)日:1997-05-06

    申请号:US435023

    申请日:1995-05-04

    摘要: An integrated optical XY coupler having two converging input waveguide arms meeting in a central section and a central output waveguide arm and two diverging flanking output waveguide arms emanating from the central section. In-phase light from the input arms constructively interfers in the central section to produce a single mode output in the central output arm with the rest of the light being collected in the flanking output arms. Crosstalk between devices on a substrate is minimized by this collection of the out-of-phase light by the flanking output arms of the XY coupler.

    摘要翻译: 一个集成的光学XY耦合器,具有两个会聚在中心部分的会聚输入波导臂和中心输出波导臂以及从中心部分发出的两个发散侧翼输出波导臂。 来自输入臂的同相光在中央部分中构造性地接合,以在中央输出臂中产生单模输出,其余的光被收集在侧向输出臂中。 通过XY耦合器的侧向输出臂的异相光的收集,使基板上的器件之间的串扰最小化。

    Integrated injection-locked semiconductor diode laser
    5.
    发明授权
    Integrated injection-locked semiconductor diode laser 失效
    集成注入锁定半导体二极管激光器

    公开(公告)号:US4995047A

    公开(公告)日:1991-02-19

    申请号:US400621

    申请日:1989-08-30

    IPC分类号: H01S5/062 H01S5/40

    摘要: A continuous wave integrated injection-locked high-power diode laser array is provided with an on-chip independently-controlled master laser. The integrated injection locked high-power diode laser array is capable of continuous wave lasing in a single near-diffraction limited output beam at single-facet power levels up to 125 mW (250 mW total). Electronic steering of the array emission over an angle of 0.5 degrees is obtained by varying current to the master laser. The master laser injects a laser beam into the slave array by reflection of a rear facet.

    摘要翻译: 连续波集成注入锁定大功率二极管激光器阵列具有片上独立控制的主激光器。 集成注入锁定的大功率二极管激光器阵列能够在高达125 mW(总共250 mW)的单面功率水平下,在单个近衍射限制输出光束中连续波浪激光。 通过改变主激光器的电流,获得0.5度角的阵列发射的电子转向。 主激光器通过后面的反射将激光束注入到从阵列中。

    Semiconductor laser devices having lateral refractive index tailoring
    6.
    发明授权
    Semiconductor laser devices having lateral refractive index tailoring 失效
    半导体激光器件具有侧向折射率定制

    公开(公告)号:US4965806A

    公开(公告)日:1990-10-23

    申请号:US366398

    申请日:1989-06-15

    摘要: A broad-area semiconductor laser diode includes an active lasing region interposed between an upper and a lower cladding layer, the laser diode further comprising structure for controllably varying a lateral refractive index profile of the diode to substantially compensate for an effect of junction heating during operation. In embodiments disclosed the controlling structure comprises resistive heating strips or non-radiative linear junctions disposed parallel to the active region. Another embodiment discloses a multi-layered upper cladding region selectively disordered by implanted or diffused dopant impurities. Still another embodiment discloses an upper cladding layer of variable thickness that is convex in shape and symmetrically disposed about a central axis of the active region. The teaching of the invention is also shown to be applicable to arrays of semiconductor laser diodes.

    摘要翻译: 广域半导体激光二极管包括插入在上包层和下包层之间的有源激光区域,激光二极管还包括用于可控地改变二极管的横向折射率分布的结构,以大体上补偿在操作期间结加热的影响 。 在所公开的实施例中,控制结构包括平行于有源区域布置的电阻加热带或非辐射线性结。 另一实施例公开了一种由注入或扩散的掺杂​​杂质选择性地紊乱的多层上覆层区域。 另一个实施例公开了一种可变厚度的上包层,其形状为凸起并且围绕活动区域的中心轴线对称设置。 本发明的教导也被证明适用于半导体激光二极管阵列。