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    Semiconductor device having overlay measurement mark and method of fabricating the same
    1.
    发明授权
    Semiconductor device having overlay measurement mark and method of fabricating the same 有权
    具有覆盖测量标记的半导体器件及其制造方法

    公开(公告)号：US07582899B2

    公开(公告)日：2009-09-01

    申请号：US11296921

    申请日：2005-12-08

    申请人： Cha-Won Koh ,  Sang-Gyun Woo ,  Seok-Hwan Oh ,  Gi-Sung Yeo ,  Hyun-Jae Kang ,  Jang-Ho Shin

    发明人： Cha-Won Koh ,  Sang-Gyun Woo ,  Seok-Hwan Oh ,  Gi-Sung Yeo ,  Hyun-Jae Kang ,  Jang-Ho Shin

    IPC分类号： H01L23/58 ,  H01L29/10

    CPC分类号： H01L23/544 ,  G03F7/70633 ,  G03F9/7076 ,  H01L2223/54453 ,  H01L2924/0002 ,  H01L2924/00

    摘要： There are provided a semiconductor device having an overlay measurement mark, and a method of fabricating the same. The semiconductor device includes a scribe line region disposed on a semiconductor substrate. A first main scale layer having a first group of line and space patterns and a second group of line and space patterns is disposed on the scribe line region. Line-shaped second main scale patterns are disposed on space regions of the first group of the line and space patterns. Line-shaped vernier scale patterns are disposed on space regions of the second group of the line and space patterns. In the method, a first main scale layer having a first group of line and space patterns and a second group of line and space patterns is formed on a semiconductor substrate. Line-shaped second main scale patterns are formed on space regions of the first group of the line and space patterns. Line-shaped vernier scale patterns are formed on space regions of the second group of the line and space patterns.

    摘要翻译： 提供了具有覆盖测量标记的半导体器件及其制造方法。 半导体器件包括设置在半导体衬底上的划线区域。 具有第一组线和空间图案的第一主刻度层和第二组线和空间图案组被布置在划线区域上。 线形的第二主刻度图案设置在第一组线和空间图案的空间区域上。 线状游标刻度图案设置在第二组线和空间图案的空间区域上。 在该方法中，在半导体衬底上形成具有第一组线和空间图案组以及第二组线和空间图案组的第一主刻度层。 线形的第二主刻度图案形成在第一组线和空间图案的空间区域上。 在第二组线和空间图案的空间区域上形成线形游标刻度图案。

    Photomask for measuring lens aberration, method of its manufacture, and method of its use
    3.
    发明申请
    Photomask for measuring lens aberration, method of its manufacture, and method of its use 失效
    用于测量透镜像差的光掩模，其制造方法及其使用方法

    公开(公告)号：US20060216616A1

    公开(公告)日：2006-09-28

    申请号：US11388887

    申请日：2006-03-23

    申请人： Jang-Ho Shin ,  Han-Ku Chu ,  Sang-Gyun Woo ,  Suk-Joo Lee

    发明人： Jang-Ho Shin ,  Han-Ku Chu ,  Sang-Gyun Woo ,  Suk-Joo Lee

    IPC分类号： G06F17/50 ,  G01B9/00 ,  G03F1/00

    CPC分类号： G01M11/0264 ,  G03F1/44 ,  G03F7/706

    摘要： A photomask for measuring lens aberration, a method of manufacturing the photomask, and a method of measuring lens aberration using the photomask are provided. In an embodiment, the photomask includes a transparent substrate having first and second surfaces. A reference pattern group and an encoded pattern group are formed on the second surface of the transparent substrate, spaced apart from each other. An aperture that includes a Fresnel zone is formed to face the second surface on the second surface of the transparent substrate. Light throughput and measurement efficiency are improved.

    摘要翻译： 提供了用于测量透镜像差的光掩模，制造光掩模的方法以及使用光掩模测量透镜像差的方法。 在一个实施例中，光掩模包括具有第一和第二表面的透明基板。 参考图案组和编码图案组形成在透明基板的彼此间隔开的第二表面上。 包括菲涅耳区的孔形成为面对透明基板的第二表面上的第二表面。 光通量和测量效率得到提高。

    Photomask for measuring lens aberration, method of its manufacture, and method of its use
    4.
    发明授权
    Photomask for measuring lens aberration, method of its manufacture, and method of its use 失效
    用于测量透镜像差的光掩模，其制造方法及其使用方法

    公开(公告)号：US07403276B2

    公开(公告)日：2008-07-22

    申请号：US11388887

    申请日：2006-03-23

    申请人： Jang-Ho Shin ,  Han-Ku Cho ,  Sang-Gyun Woo ,  Suk-Joo Lee

    发明人： Jang-Ho Shin ,  Han-Ku Cho ,  Sang-Gyun Woo ,  Suk-Joo Lee

    IPC分类号： G01B9/00

    CPC分类号： G01M11/0264 ,  G03F1/44 ,  G03F7/706

    摘要： A photomask for measuring lens aberration, a method of manufacturing the photomask, and a method of measuring lens aberration using the photomask are provided. In an embodiment, the photomask includes a transparent substrate having first and second surfaces. A reference pattern group and an encoded pattern group are formed on the second surface of the transparent substrate, spaced apart from each other. An aperture that includes a Fresnel zone is formed to face the second surface on the second surface of the transparent substrate. Light throughput and measurement efficiency are improved.

    摘要翻译： 提供了用于测量透镜像差的光掩模，制造光掩模的方法以及使用光掩模测量透镜像差的方法。 在一个实施例中，光掩模包括具有第一和第二表面的透明基板。 参考图案组和编码图案组形成在透明基板的彼此间隔开的第二表面上。 包括菲涅耳区的孔径形成为与透明基板的第二表面上的第二表面相对。 光通量和测量效率得到提高。

    Methods for aligning patterns on a substrate based on optical properties of a mask layer and related devices
    5.
    发明申请
    Methods for aligning patterns on a substrate based on optical properties of a mask layer and related devices 审中-公开
    基于掩模层的光学性质和相关器件在衬底上对准图案的方法

    公开(公告)号：US20060079067A1

    公开(公告)日：2006-04-13

    申请号：US11235607

    申请日：2005-09-26

    申请人： Jang-Ho Shin ,  Suk-Joo Lee ,  Han-Ku Cho ,  Sang-Gyun Woo

    发明人： Jang-Ho Shin ,  Suk-Joo Lee ,  Han-Ku Cho ,  Sang-Gyun Woo

    IPC分类号： H01L21/76 ,  H01L21/78 ,  H01L21/66

    CPC分类号： H01L21/0274 ,  H01L21/0279

    摘要： A method of fabricating a semiconductor device includes forming a material layer on a substrate, forming a mask layer on the material layer, and implanting ions into the mask layer to reduce light absorption thereof. An alignment key may be formed between the material layer and the substrate, and a location of the alignment key may be optically determined through the implanted mask layer. The implanted mask layer is patterned to define a mask pattern, and the material layer is patterned using the mask pattern as an etching mask. Related devices are also discussed.

    摘要翻译： 制造半导体器件的方法包括在衬底上形成材料层，在材料层上形成掩模层，并将离子注入到掩模层中以减少其光吸收。 可以在材料层和衬底之间形成对准键，并且可以通过注入的掩模层来光学地确定对准键的位置。 将植入的掩模层图案化以限定掩模图案，并且使用掩模图案将材料层图案化为蚀刻掩模。 还讨论了相关设备。