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    Photomask for measuring lens aberration, method of its manufacture, and method of its use
    1.
    发明授权
    Photomask for measuring lens aberration, method of its manufacture, and method of its use 失效
    用于测量透镜像差的光掩模，其制造方法及其使用方法

    公开(公告)号：US07403276B2

    公开(公告)日：2008-07-22

    申请号：US11388887

    申请日：2006-03-23

    申请人： Jang-Ho Shin ,  Han-Ku Cho ,  Sang-Gyun Woo ,  Suk-Joo Lee

    发明人： Jang-Ho Shin ,  Han-Ku Cho ,  Sang-Gyun Woo ,  Suk-Joo Lee

    IPC分类号： G01B9/00

    CPC分类号： G01M11/0264 ,  G03F1/44 ,  G03F7/706

    摘要： A photomask for measuring lens aberration, a method of manufacturing the photomask, and a method of measuring lens aberration using the photomask are provided. In an embodiment, the photomask includes a transparent substrate having first and second surfaces. A reference pattern group and an encoded pattern group are formed on the second surface of the transparent substrate, spaced apart from each other. An aperture that includes a Fresnel zone is formed to face the second surface on the second surface of the transparent substrate. Light throughput and measurement efficiency are improved.

    摘要翻译： 提供了用于测量透镜像差的光掩模，制造光掩模的方法以及使用光掩模测量透镜像差的方法。 在一个实施例中，光掩模包括具有第一和第二表面的透明基板。 参考图案组和编码图案组形成在透明基板的彼此间隔开的第二表面上。 包括菲涅耳区的孔径形成为与透明基板的第二表面上的第二表面相对。 光通量和测量效率得到提高。

    Methods for aligning patterns on a substrate based on optical properties of a mask layer and related devices
    2.
    发明申请
    Methods for aligning patterns on a substrate based on optical properties of a mask layer and related devices 审中-公开
    基于掩模层的光学性质和相关器件在衬底上对准图案的方法

    公开(公告)号：US20060079067A1

    公开(公告)日：2006-04-13

    申请号：US11235607

    申请日：2005-09-26

    申请人： Jang-Ho Shin ,  Suk-Joo Lee ,  Han-Ku Cho ,  Sang-Gyun Woo

    发明人： Jang-Ho Shin ,  Suk-Joo Lee ,  Han-Ku Cho ,  Sang-Gyun Woo

    IPC分类号： H01L21/76 ,  H01L21/78 ,  H01L21/66

    CPC分类号： H01L21/0274 ,  H01L21/0279

    摘要： A method of fabricating a semiconductor device includes forming a material layer on a substrate, forming a mask layer on the material layer, and implanting ions into the mask layer to reduce light absorption thereof. An alignment key may be formed between the material layer and the substrate, and a location of the alignment key may be optically determined through the implanted mask layer. The implanted mask layer is patterned to define a mask pattern, and the material layer is patterned using the mask pattern as an etching mask. Related devices are also discussed.

    摘要翻译： 制造半导体器件的方法包括在衬底上形成材料层，在材料层上形成掩模层，并将离子注入到掩模层中以减少其光吸收。 可以在材料层和衬底之间形成对准键，并且可以通过注入的掩模层来光学地确定对准键的位置。 将植入的掩模层图案化以限定掩模图案，并且使用掩模图案将材料层图案化为蚀刻掩模。 还讨论了相关设备。

    Optical masks and methods for measuring aberration of a beam
    3.
    发明申请
    Optical masks and methods for measuring aberration of a beam 有权
    用于测量光束像差的光学掩模和方法

    公开(公告)号：US20060154155A1

    公开(公告)日：2006-07-13

    申请号：US11311109

    申请日：2005-12-19

    申请人： Chan Hwang ,  Suk-Joo Lee ,  Han-Ku Cho ,  Sang-Gyun Woo

    发明人： Chan Hwang ,  Suk-Joo Lee ,  Han-Ku Cho ,  Sang-Gyun Woo

    IPC分类号： G03F1/00

    CPC分类号： G03F7/706 ,  G03F1/44

    摘要： An optical mask for use with an exposure beam includes a mask substrate adapted to be placed on a traveling path of the exposure beam. A reference pattern is formed on the mask substrate. The reference pattern is adapted to direct the exposure beam to travel in a predetermined reference direction. A comparative pattern is formed on the mask substrate. The comparative pattern is adapted to direct the exposure beam to travel in a direction inclined at a predetermined angle with respect to the reference direction.

    摘要翻译： 用于曝光光束的光学掩模包括适于放置在曝光光束的行进路径上的掩模基板。 在掩模基板上形成参考图案。 参考图案适于引导曝光光束在预定的参考方向上行进。 在掩模基板上形成比较图案。 比较图案适于引导曝光光束相对于参考方向在以预定角度倾斜的方向上行进。

    OPTICAL MASKS AND METHODS FOR MEASURING ABERRATION OF A BEAM
    7.
    发明申请
    OPTICAL MASKS AND METHODS FOR MEASURING ABERRATION OF A BEAM 失效
    用于测量光束的光学掩模和方法

    公开(公告)号：US20100112466A1

    公开(公告)日：2010-05-06

    申请号：US12686093

    申请日：2010-01-12

    申请人： Chan Hwang ,  Suk-Joo Lee ,  Han-Ku Cho ,  Sang-Gyun Woo

    发明人： Chan Hwang ,  Suk-Joo Lee ,  Han-Ku Cho ,  Sang-Gyun Woo

    IPC分类号： G03F1/00

    CPC分类号： G03F7/706 ,  G03F1/44

    摘要： An optical mask for use with an exposure beam includes a mask substrate adapted to be placed on a traveling path of the exposure beam. A reference pattern is formed on the mask substrate. The reference pattern is adapted to direct the exposure beam to travel in a predetermined reference direction. A comparative pattern is formed on the mask substrate. The comparative pattern is adapted to direct the exposure beam to travel in a direction inclined at a predetermined angle with respect to the reference direction.

    摘要翻译： 用于曝光光束的光学掩模包括适于放置在曝光光束的行进路径上的掩模基板。 在掩模基板上形成参考图案。 参考图案适于引导曝光光束在预定的参考方向上行进。 在掩模基板上形成比较图案。 比较图案适于引导曝光光束相对于参考方向在以预定角度倾斜的方向上行进。

    Optical masks and methods for measuring aberration of a beam
    8.
    发明授权
    Optical masks and methods for measuring aberration of a beam 有权
    用于测量光束像差的光学掩模和方法

    公开(公告)号：US07670725B2

    公开(公告)日：2010-03-02

    申请号：US11311109

    申请日：2005-12-19

    申请人： Chan Hwang ,  Suk-Joo Lee ,  Han-Ku Cho ,  Sang-Gyun Woo

    发明人： Chan Hwang ,  Suk-Joo Lee ,  Han-Ku Cho ,  Sang-Gyun Woo

    IPC分类号： G03F1/00

    CPC分类号： G03F7/706 ,  G03F1/44

    摘要： An optical mask for use with an exposure beam includes a mask substrate adapted to be placed on a traveling path of the exposure beam. A reference pattern is formed on the mask substrate. The reference pattern is adapted to direct the exposure beam to travel in a predetermined reference direction. A comparative pattern is formed on the mask substrate. The comparative pattern is adapted to direct the exposure beam to travel in a direction inclined at a predetermined angle with respect to the reference direction.

    摘要翻译： 用于曝光光束的光学掩模包括适于放置在曝光光束的行进路径上的掩模基板。 在掩模基板上形成参考图案。 参考图案适于引导曝光光束在预定的参考方向上行进。 在掩模基板上形成比较图案。 比较图案适于引导曝光光束相对于参考方向在以预定角度倾斜的方向上行进。

    Semiconductor memory devices including diagonal bit lines
    9.
    发明授权
    Semiconductor memory devices including diagonal bit lines 有权
    半导体存储器件包括对角位线

    公开(公告)号：US08013375B2

    公开(公告)日：2011-09-06

    申请号：US12465234

    申请日：2009-05-13

    申请人： Duo-Hoon Goo ,  Han-Ku Cho ,  Joo-Tac Moon ,  Sang-Gyun Woo ,  Gi-Sung Yeo ,  Kyoung-Yun Baek

    发明人： Duo-Hoon Goo ,  Han-Ku Cho ,  Joo-Tac Moon ,  Sang-Gyun Woo ,  Gi-Sung Yeo ,  Kyoung-Yun Baek

    IPC分类号： H01L27/108

    CPC分类号： H01L27/10814 ,  H01L27/0207 ,  H01L27/10882 ,  H01L27/11502

    摘要： A semiconductor memory device may include a semiconductor substrate having a plurality of active regions wherein each active region has a length in a direction of a first axis and a width in a direction of a second axis. The length may be greater than the width, and the plurality of active regions may be provided in a plurality of columns in the direction of the second axis. A plurality of wordline pairs may be provided on the substrate, with each wordline pair crossing active regions of a respective column of active regions defining a drain portion of each active region between wordlines of the respective wordline pair. A plurality of bitlines on the substrate may cross the plurality of wordline pairs, with each bitline being electrically coupled to a drain portion of a respective active region of each column, and with each bitline crossing drain portions of active regions of adjacent columns in different directions so that different portions of a same bitline are aligned in different directions on different active regions of adjacent columns.

    摘要翻译： 半导体存储器件可以包括具有多个有源区的半导体衬底，其中每个有源区具有在第一轴的方向上的长度和在第二轴的方向上的宽度。 长度可以大于宽度，并且多个有源区域可以在第二轴线的方向上以多个列设置。 可以在衬底上提供多个字线对，其中每个字线对跨越相应的有效区域列的有源区域，在相应字线对的字线之间限定每个有效区域的漏极部分。 衬底上的多个位线可以跨越多个字线对，每个位线电耦合到每列的相应有源区的漏极部分，并且每个位线在不同方向上与相邻列的有源区域的漏极部分交叉 使得相同位线的不同部分在相邻列的不同有效区域上在不同方向上对准。

    Semiconductor Memory Devices Including Extended Memory Elements
    10.
    发明申请
    Semiconductor Memory Devices Including Extended Memory Elements 审中-公开
    包括扩展内存元素的半导体存储器件

    公开(公告)号：US20090218654A1

    公开(公告)日：2009-09-03

    申请号：US12465261

    申请日：2009-05-13

    申请人： Don-Hoon Goo ,  Han-Ku Cho ,  Joo-Tae Moon ,  Sang-Gyun Woo ,  Gi-Sung Yeo ,  Kyoung-Yun Baek

    发明人： Don-Hoon Goo ,  Han-Ku Cho ,  Joo-Tae Moon ,  Sang-Gyun Woo ,  Gi-Sung Yeo ,  Kyoung-Yun Baek

    IPC分类号： H01L29/06 ,  H01L29/68

    CPC分类号： H01L27/10814 ,  H01L27/0207 ,  H01L27/10882 ,  H01L27/11502

    摘要： A semiconductor memory device may include a semiconductor substrate having an active region thereof, and the active region may have a length and a width, with the length being greater than the width. A field isolation layer may be on the semiconductor substrate surrounding the active region. First and second wordlines may be on the substrate crossing the active region, with the first and second wordlines defining a drain portion of the active region between the first and second wordlines and first and second source portions of the active region at opposite ends of the active region. First and second memory storage elements may be respectively coupled to the first and second source portions of the active region, with the first and second wordlines being between portions of the respective first and second memory storage elements and the active region in a direction perpendicular to a surface of the substrate.

    摘要翻译： 半导体存储器件可以包括具有其有源区的半导体衬底，并且有源区可以具有长度和宽度，其长度大于宽度。 场隔离层可以在围绕有源区的半导体衬底上。 第一和第二字线可以在与有源区交叉的衬底上，其中第一和第二字线限定在第一和第二字线之间的有源区的漏极部分和有源区的第一和第二源极部分在有源区域的相对端处 地区。 第一和第二存储器存储元件可以分别耦合到有源区域的第一和第二源极部分，其中第一和第二字线在相应的第一和第二存储器存储元件的部分之间，并且有源区域在垂直于 基板的表面。