Optical masks and methods for measuring aberration of a beam
    1.
    发明申请
    Optical masks and methods for measuring aberration of a beam 有权
    用于测量光束像差的光学掩模和方法

    公开(公告)号:US20060154155A1

    公开(公告)日:2006-07-13

    申请号:US11311109

    申请日:2005-12-19

    IPC分类号: G03F1/00

    CPC分类号: G03F7/706 G03F1/44

    摘要: An optical mask for use with an exposure beam includes a mask substrate adapted to be placed on a traveling path of the exposure beam. A reference pattern is formed on the mask substrate. The reference pattern is adapted to direct the exposure beam to travel in a predetermined reference direction. A comparative pattern is formed on the mask substrate. The comparative pattern is adapted to direct the exposure beam to travel in a direction inclined at a predetermined angle with respect to the reference direction.

    摘要翻译: 用于曝光光束的光学掩模包括适于放置在曝光光束的行进路径上的掩模基板。 在掩模基板上形成参考图案。 参考图案适于引导曝光光束在预定的参考方向上行进。 在掩模基板上形成比较图案。 比较图案适于引导曝光光束相对于参考方向在以预定角度倾斜的方向上行进。

    OPTICAL MASKS AND METHODS FOR MEASURING ABERRATION OF A BEAM
    2.
    发明申请
    OPTICAL MASKS AND METHODS FOR MEASURING ABERRATION OF A BEAM 失效
    用于测量光束的光学掩模和方法

    公开(公告)号:US20100112466A1

    公开(公告)日:2010-05-06

    申请号:US12686093

    申请日:2010-01-12

    IPC分类号: G03F1/00

    CPC分类号: G03F7/706 G03F1/44

    摘要: An optical mask for use with an exposure beam includes a mask substrate adapted to be placed on a traveling path of the exposure beam. A reference pattern is formed on the mask substrate. The reference pattern is adapted to direct the exposure beam to travel in a predetermined reference direction. A comparative pattern is formed on the mask substrate. The comparative pattern is adapted to direct the exposure beam to travel in a direction inclined at a predetermined angle with respect to the reference direction.

    摘要翻译: 用于曝光光束的光学掩模包括适于放置在曝光光束的行进路径上的掩模基板。 在掩模基板上形成参考图案。 参考图案适于引导曝光光束在预定的参考方向上行进。 在掩模基板上形成比较图案。 比较图案适于引导曝光光束相对于参考方向在以预定角度倾斜的方向上行进。

    Optical masks and methods for measuring aberration of a beam
    3.
    发明授权
    Optical masks and methods for measuring aberration of a beam 有权
    用于测量光束像差的光学掩模和方法

    公开(公告)号:US07670725B2

    公开(公告)日:2010-03-02

    申请号:US11311109

    申请日:2005-12-19

    IPC分类号: G03F1/00

    CPC分类号: G03F7/706 G03F1/44

    摘要: An optical mask for use with an exposure beam includes a mask substrate adapted to be placed on a traveling path of the exposure beam. A reference pattern is formed on the mask substrate. The reference pattern is adapted to direct the exposure beam to travel in a predetermined reference direction. A comparative pattern is formed on the mask substrate. The comparative pattern is adapted to direct the exposure beam to travel in a direction inclined at a predetermined angle with respect to the reference direction.

    摘要翻译: 用于曝光光束的光学掩模包括适于放置在曝光光束的行进路径上的掩模基板。 在掩模基板上形成参考图案。 参考图案适于引导曝光光束在预定的参考方向上行进。 在掩模基板上形成比较图案。 比较图案适于引导曝光光束相对于参考方向在以预定角度倾斜的方向上行进。

    Photomask for measuring lens aberration, method of its manufacture, and method of its use
    7.
    发明授权
    Photomask for measuring lens aberration, method of its manufacture, and method of its use 失效
    用于测量透镜像差的光掩模,其制造方法及其使用方法

    公开(公告)号:US07403276B2

    公开(公告)日:2008-07-22

    申请号:US11388887

    申请日:2006-03-23

    IPC分类号: G01B9/00

    摘要: A photomask for measuring lens aberration, a method of manufacturing the photomask, and a method of measuring lens aberration using the photomask are provided. In an embodiment, the photomask includes a transparent substrate having first and second surfaces. A reference pattern group and an encoded pattern group are formed on the second surface of the transparent substrate, spaced apart from each other. An aperture that includes a Fresnel zone is formed to face the second surface on the second surface of the transparent substrate. Light throughput and measurement efficiency are improved.

    摘要翻译: 提供了用于测量透镜像差的光掩模,制造光掩模的方法以及使用光掩模测量透镜像差的方法。 在一个实施例中,光掩模包括具有第一和第二表面的透明基板。 参考图案组和编码图案组形成在透明基板的彼此间隔开的第二表面上。 包括菲涅耳区的孔径形成为与透明基板的第二表面上的第二表面相对。 光通量和测量效率得到提高。

    Double photolithography methods with reduced intermixing of solvents
    8.
    发明申请
    Double photolithography methods with reduced intermixing of solvents 审中-公开
    双光刻法减少了溶剂的混合

    公开(公告)号:US20060127816A1

    公开(公告)日:2006-06-15

    申请号:US11296816

    申请日:2005-12-07

    IPC分类号: G03F7/00

    摘要: The present invention provides a double photolithography method in which, after a first photoresist pattern including a crosslinkable agent is formed on a semiconductor substrate, a crosslinkage is formed in a molecular structure of the first photoresist pattern. A second photoresist film may be formed on a surface of the semiconductor substrate on which the crosslinked first photoresist patterns are formed. Second photoresist patterns may be formed by exposing, post-exposure baking, and developing the second photoresist film.

    摘要翻译: 本发明提供一种双光刻方法,其中在半导体衬底上形成包括可交联剂的第一光致抗蚀剂图案之后,在第一光致抗蚀剂图案的分子结构中形成交联。 可以在其上形成有交联的第一光致抗蚀剂图案的半导体衬底的表面上形成第二光致抗蚀剂膜。 可以通过曝光,曝光后烘烤和显影第二光致抗蚀剂膜来形成第二光致抗蚀剂图案。

    Methods for aligning patterns on a substrate based on optical properties of a mask layer and related devices
    9.
    发明申请
    Methods for aligning patterns on a substrate based on optical properties of a mask layer and related devices 审中-公开
    基于掩模层的光学性质和相关器件在衬底上对准图案的方法

    公开(公告)号:US20060079067A1

    公开(公告)日:2006-04-13

    申请号:US11235607

    申请日:2005-09-26

    IPC分类号: H01L21/76 H01L21/78 H01L21/66

    CPC分类号: H01L21/0274 H01L21/0279

    摘要: A method of fabricating a semiconductor device includes forming a material layer on a substrate, forming a mask layer on the material layer, and implanting ions into the mask layer to reduce light absorption thereof. An alignment key may be formed between the material layer and the substrate, and a location of the alignment key may be optically determined through the implanted mask layer. The implanted mask layer is patterned to define a mask pattern, and the material layer is patterned using the mask pattern as an etching mask. Related devices are also discussed.

    摘要翻译: 制造半导体器件的方法包括在衬底上形成材料层,在材料层上形成掩模层,并将离子注入到掩模层中以减少其光吸收。 可以在材料层和衬底之间形成对准键,并且可以通过注入的掩模层来光学地确定对准键的位置。 将植入的掩模层图案化以限定掩模图案,并且使用掩模图案将材料层图案化为蚀刻掩模。 还讨论了相关设备。

    Photomask for measuring lens aberration, method of its manufacture, and method of its use
    10.
    发明申请
    Photomask for measuring lens aberration, method of its manufacture, and method of its use 失效
    用于测量透镜像差的光掩模,其制造方法及其使用方法

    公开(公告)号:US20060216616A1

    公开(公告)日:2006-09-28

    申请号:US11388887

    申请日:2006-03-23

    IPC分类号: G06F17/50 G01B9/00 G03F1/00

    摘要: A photomask for measuring lens aberration, a method of manufacturing the photomask, and a method of measuring lens aberration using the photomask are provided. In an embodiment, the photomask includes a transparent substrate having first and second surfaces. A reference pattern group and an encoded pattern group are formed on the second surface of the transparent substrate, spaced apart from each other. An aperture that includes a Fresnel zone is formed to face the second surface on the second surface of the transparent substrate. Light throughput and measurement efficiency are improved.

    摘要翻译: 提供了用于测量透镜像差的光掩模,制造光掩模的方法以及使用光掩模测量透镜像差的方法。 在一个实施例中,光掩模包括具有第一和第二表面的透明基板。 参考图案组和编码图案组形成在透明基板的彼此间隔开的第二表面上。 包括菲涅耳区的孔形成为面对透明基板的第二表面上的第二表面。 光通量和测量效率得到提高。