摘要:
An optical mask for use with an exposure beam includes a mask substrate adapted to be placed on a traveling path of the exposure beam. A reference pattern is formed on the mask substrate. The reference pattern is adapted to direct the exposure beam to travel in a predetermined reference direction. A comparative pattern is formed on the mask substrate. The comparative pattern is adapted to direct the exposure beam to travel in a direction inclined at a predetermined angle with respect to the reference direction.
摘要:
An optical mask for use with an exposure beam includes a mask substrate adapted to be placed on a traveling path of the exposure beam. A reference pattern is formed on the mask substrate. The reference pattern is adapted to direct the exposure beam to travel in a predetermined reference direction. A comparative pattern is formed on the mask substrate. The comparative pattern is adapted to direct the exposure beam to travel in a direction inclined at a predetermined angle with respect to the reference direction.
摘要:
An optical mask for use with an exposure beam includes a mask substrate adapted to be placed on a traveling path of the exposure beam. A reference pattern is formed on the mask substrate. The reference pattern is adapted to direct the exposure beam to travel in a predetermined reference direction. A comparative pattern is formed on the mask substrate. The comparative pattern is adapted to direct the exposure beam to travel in a direction inclined at a predetermined angle with respect to the reference direction.
摘要:
An optical mask for use with an exposure beam includes a mask substrate adapted to be placed on a traveling path of the exposure beam. A reference pattern is formed on the mask substrate. The reference pattern is adapted to direct the exposure beam to travel in a predetermined reference direction. A comparative pattern is formed on the mask substrate. The comparative pattern is adapted to direct the exposure beam to travel in a direction inclined at a predetermined angle with respect to the reference direction.
摘要:
A reflective photomask for EUV light is disclosed. The reflective photomask may include a projecting pattern selectively formed on a substrate and a reflective layer on the substrate and the projecting pattern.
摘要:
A reflective photomask for EUV light is disclosed. The reflective photomask may include a projecting pattern selectively formed on a substrate and a reflective layer on the substrate and the projecting pattern.
摘要:
A photomask for measuring lens aberration, a method of manufacturing the photomask, and a method of measuring lens aberration using the photomask are provided. In an embodiment, the photomask includes a transparent substrate having first and second surfaces. A reference pattern group and an encoded pattern group are formed on the second surface of the transparent substrate, spaced apart from each other. An aperture that includes a Fresnel zone is formed to face the second surface on the second surface of the transparent substrate. Light throughput and measurement efficiency are improved.
摘要:
The present invention provides a double photolithography method in which, after a first photoresist pattern including a crosslinkable agent is formed on a semiconductor substrate, a crosslinkage is formed in a molecular structure of the first photoresist pattern. A second photoresist film may be formed on a surface of the semiconductor substrate on which the crosslinked first photoresist patterns are formed. Second photoresist patterns may be formed by exposing, post-exposure baking, and developing the second photoresist film.
摘要:
A method of fabricating a semiconductor device includes forming a material layer on a substrate, forming a mask layer on the material layer, and implanting ions into the mask layer to reduce light absorption thereof. An alignment key may be formed between the material layer and the substrate, and a location of the alignment key may be optically determined through the implanted mask layer. The implanted mask layer is patterned to define a mask pattern, and the material layer is patterned using the mask pattern as an etching mask. Related devices are also discussed.
摘要:
A photomask for measuring lens aberration, a method of manufacturing the photomask, and a method of measuring lens aberration using the photomask are provided. In an embodiment, the photomask includes a transparent substrate having first and second surfaces. A reference pattern group and an encoded pattern group are formed on the second surface of the transparent substrate, spaced apart from each other. An aperture that includes a Fresnel zone is formed to face the second surface on the second surface of the transparent substrate. Light throughput and measurement efficiency are improved.