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公开(公告)号:US20120119243A1
公开(公告)日:2012-05-17
申请号:US13109669
申请日:2011-05-17
申请人: Chang Yeon KIM , Da Hye KIM , Hong Chul LIM , Joon Hee LEE , Jong Kyun YOU
发明人: Chang Yeon KIM , Da Hye KIM , Hong Chul LIM , Joon Hee LEE , Jong Kyun YOU
IPC分类号: H01L33/22
CPC分类号: H01L33/382 , H01L33/007 , H01L33/0079 , H01L33/20 , H01L33/22 , H01L33/32 , H01L33/38 , H01L33/40 , H01L33/405 , H01L33/46 , H01L2224/48463 , H01L2224/73265
摘要: Exemplary embodiments of the present invention relate to a high-efficiency light emitting diode (LED). The LED according to an exemplary embodiment includes a substrate, a semiconductor stack arranged on the substrate, wherein the semiconductor stack has a p-type semiconductor layer, an active layer and an n-type semiconductor layer, a first metal layer interposed between the substrate and the semiconductor stack, the first metal layer ohmic-contacted with the semiconductor stack, a first electrode pad arranged on the semiconductor stack, an electrode extension extending from the first electrode pad, wherein the electrode extension has a contact region contacting the n-type semiconductor layer, a first insulating layer interposed between the substrate and the semiconductor stack, wherein the first insulating layer covers a surface region of the p-type semiconductor layer under the contact region of the electrode extension, and a second insulating layer interposed between the first electrode pad and the semiconductor stack.
摘要翻译: 本发明的示例性实施例涉及一种高效率发光二极管(LED)。 根据示例性实施例的LED包括衬底,布置在衬底上的半导体堆叠,其中半导体堆叠具有p型半导体层,有源层和n型半导体层,插入在衬底之间的第一金属层 半导体堆叠,与半导体堆叠欧姆接触的第一金属层,布置在半导体堆叠上的第一电极焊盘,从第一电极焊盘延伸的电极延伸部,其中电极延伸部具有接触n型 半导体层,插入在所述基板和所述半导体堆叠之间的第一绝缘层,其中所述第一绝缘层覆盖所述电极延伸部的接触区域下方的所述p型半导体层的表面区域,以及插入在所述第一绝缘层之间的第二绝缘层 电极焊盘和半导体堆叠。