公开(公告)号：US20120049208A1

公开(公告)日：2012-03-01

申请号：US13198396

申请日：2011-08-04

申请人： Chao Hsing Chen ,  Chien Fu Shen ,  Tsun Kai Ko ,  Schang Jing Hon ,  Hsin Mao Liu

发明人： Chao Hsing Chen ,  Chien Fu Shen ,  Tsun Kai Ko ,  Schang Jing Hon ,  Hsin Mao Liu

IPC分类号： H01L33/62

CPC分类号： H01L23/60 ,  H01L25/0753 ,  H01L27/153 ,  H01L27/156 ,  H01L33/62 ,  H01L2924/0002 ,  H05B33/089 ,  Y02B20/341 ,  H01L2924/00

摘要： The present disclosure provides a light emitting device, including a serially-connected LED array including a plurality of LED cells on a single substrate, including a first LED cell, a second LED cell, and a serially-connected LED sub-array including at least three LED cells intervening the first and second LED cell, wherein each of the first and second LED cell including a first side and a second side that the first side of the first LED cell and/or the second LED cell neighboring to the LED sub-array, and the second side of the first LED cell neighboring to the second side of the second LED cell; a trench between the second sides of the first and second LED cells; and a protecting structure formed near the trench to prevent the light-emitting device from being damaged near the trench by a surge voltage higher than a normal operating voltage of the light emitting device.

摘要翻译： 本公开提供了一种发光器件，包括串联连接的LED阵列，其包括在单个衬底上的多个LED电池，包括第一LED电池，第二LED电池和串联连接的LED子阵列，至少包括 介于第一和第二LED单元之间的三个LED单元，其中第一和第二LED单元中的每一个包括第一LED单元和/或第二LED单元的与LED子单元相邻的第一侧和第二侧， 阵列，以及与第二LED单元的第二侧相邻的第一LED单元的第二面; 第一和第二LED电池的第二侧之间的沟槽; 以及形成在沟槽附近的保护结构，以防止发光器件在高于发光器件的正常工作电压的浪涌电压下在沟槽附近损坏。

公开(公告)号：US09171883B2

公开(公告)日：2015-10-27

申请号：US13198396

申请日：2011-08-04

申请人： Chao Hsing Chen ,  Chien Fu Shen ,  Tsun Kai Ko ,  Schang Jing Hon ,  Hsin Mao Liu

发明人： Chao Hsing Chen ,  Chien Fu Shen ,  Tsun Kai Ko ,  Schang Jing Hon ,  Hsin Mao Liu

IPC分类号： H01L29/18 ,  H01L27/15 ,  H01L23/60 ,  H05B33/08 ,  H01L25/075 ,  H01L33/62

CPC分类号： H01L23/60 ,  H01L25/0753 ,  H01L27/153 ,  H01L27/156 ,  H01L33/62 ,  H01L2924/0002 ,  H05B33/089 ,  Y02B20/341 ,  H01L2924/00

摘要： The present disclosure provides a light emitting device, including a serially- connected LED array including a plurality of LED cells on a substrate, including a first LED cell, a second LED cell, and a serially-connected LED sub-array intervening the first and second LED cell; a trench between two neighboring sides of the first and the second LED cells; and a protecting structure formed near the trench to prevent the light-emitting device from being damaged by a surge voltage higher than a normal operating voltage. The protecting structure includes a first insulating layer and a second insulating layer formed over the first insulating layer and partially filling in the trench, wherein two ends of the first insulating layer extending outward from the second insulating layer partially covers the top surfaces of the first and the second LED cells.

摘要翻译： 本公开提供了一种发光器件，其包括串联连接的LED阵列，其包括在衬底上的多个LED单元，包括第一LED单元，第二LED单元和串联连接的LED子阵列，其插入第一和 第二LED电池; 在第一和第二LED电池的两个相邻侧之间的沟槽; 以及形成在沟槽附近的保护结构，以防止发光器件被高于正常工作电压的浪涌电压损坏。 保护结构包括第一绝缘层和形成在第一绝缘层之上并部分填充在沟槽中的第二绝缘层，其中从第二绝缘层向外延伸的第一绝缘层的两端部分覆盖第一绝缘层的顶表面， 第二个LED电池。

公开(公告)号：US08823022B2

公开(公告)日：2014-09-02

申请号：US13209085

申请日：2011-08-12

申请人： Chao Hsing Chen ,  Chien Fu Shen ,  Tsun Kai Ko ,  Schang Jing Hon

发明人： Chao Hsing Chen ,  Chien Fu Shen ,  Tsun Kai Ko ,  Schang Jing Hon

IPC分类号： H01L33/08

CPC分类号： H01L23/60 ,  H01L25/0753 ,  H01L27/153 ,  H01L27/156 ,  H01L33/62 ,  H01L2924/0002 ,  H05B33/089 ,  Y02B20/341 ,  H01L2924/00

摘要： A light emitting device includes a serially-connected LED array of a plurality of LED cells epitaxially formed on a substrate. The LED array includes a first LED cell, and a second LED cell adjacent to each other, and a serially-connected LED sub-array including at least three LED cells intervening the first and the second LED cells. Each LED cell includes a first semiconductor layer formed on the substrate; a second semiconductor layer formed on the first semiconductor layer; and an active layer formed between the first semiconductor layer and the second semiconductor layer; wherein the distance between the first semiconductor layer of the first LED cell and that of the second LED cell is larger than 30 μm, and one of the first semiconductor layers and/or one of the second semiconductor layers of the LED cells includes a round corner with a radius of curvature not less than 15 μm.

摘要翻译： 发光器件包括在衬底上外延形成的多个LED单元的串联LED阵列。 LED阵列包括彼此相邻的第一LED单元和第二LED单元，以及包括至少三个LED单元的串联连接的LED子阵列，所述至少三个LED单元插入第一和第二LED单元。 每个LED单元包括形成在基板上的第一半导体层; 形成在所述第一半导体层上的第二半导体层; 以及形成在所述第一半导体层和所述第二半导体层之间的有源层; 其中所述第一LED电池的第一半导体层和所述第二LED电池的第一半导体层之间的距离大于30μm，并且所述第一半导体层和/或所述LED电池的所述第二半导体层中的一个包括圆角 曲率半径不小于15μm。

公开(公告)号：US20120049209A1

公开(公告)日：2012-03-01

申请号：US13209085

申请日：2011-08-12

申请人： Chao Hsing Chen ,  Chien Fu Shen ,  Tsun Kai Ko ,  Schang Jing Hon

发明人： Chao Hsing Chen ,  Chien Fu Shen ,  Tsun Kai Ko ,  Schang Jing Hon

IPC分类号： H01L33/08

CPC分类号： H01L23/60 ,  H01L25/0753 ,  H01L27/153 ,  H01L27/156 ,  H01L33/62 ,  H01L2924/0002 ,  H05B33/089 ,  Y02B20/341 ,  H01L2924/00

摘要： The present disclosure provides a light emitting device including a substrate and a serially-connected LED array of a plurality of LED cells epitaxially formed on the substrate, and the serially-connected LED array including a first LED cell; a second LED cell; and a serially-connected LED sub-array including at least three LED cells intervening the first and the second LED cells; wherein each LED cell of the serially-connected LED array including a first semiconductor layer formed on the substrate; a second semiconductor layer formed on the first semiconductor layer; and an active layer formed between the first semiconductor layer and the second semiconductor layer; wherein the first LED cell and the second LED cell are adjacent to each other, and the distance between the first semiconductor layer of the first LED cell and the first semiconductor layer of the second LED cell is larger than 30 μm.

摘要翻译： 本公开提供一种发光器件，其包括基板和在该基板上外延形成的多个LED单元的串联连接的LED阵列，以及包括第一LED单元的串联连接的LED阵列; 第二LED电池; 以及串联连接的LED子阵列，其包括插入所述第一和第二LED单元的至少三个LED单元; 其中所述串联LED阵列的每个LED单元包括形成在所述基板上的第一半导体层; 形成在所述第一半导体层上的第二半导体层; 以及形成在所述第一半导体层和所述第二半导体层之间的有源层; 其中所述第一LED电池和所述第二LED电池彼此相邻，并且所述第一LED电池的第一半导体层与所述第二LED电池的第一半导体层之间的距离大于30μm。