公开(公告)号：US20070087573A1

公开(公告)日：2007-04-19

申请号：US11255420

申请日：2005-10-19

申请人： Yi-Yiing Chiang ,  Chao-Ching Hsieh ,  Tzung-Yu Hung ,  Yu-Lan Chang ,  Chien-Chung Huang ,  Yi-Wei Chen

发明人： Yi-Yiing Chiang ,  Chao-Ching Hsieh ,  Tzung-Yu Hung ,  Yu-Lan Chang ,  Chien-Chung Huang ,  Yi-Wei Chen

IPC分类号： C03C25/68 ,  B05D3/00 ,  H01L21/302 ,  B44C1/22

CPC分类号： C23C14/021 ,  H01L21/28506 ,  H01L21/28518

摘要： A pre-treatment method for physical vapor deposition of a metal layer is provided. A substrate is first provided and then a dry cleaning process is performed to the substrate using a chemical etching process, in which the chemical etching process causes a reaction to the oxide. Thereafter, an annealing process is performed, followed by a cooling process. Due to the treatment prior to depositing of the metal layer, subsequent metal layers from ill effects are prevented.

摘要翻译： 提供了用于金属层的物理气相沉积的预处理方法。 首先提供衬底，然后使用化学蚀刻工艺对衬底进行干法处理，其中化学蚀刻工艺引起与氧化物的反应。 此后，进行退火处理，随后进行冷却处理。 由于在沉积金属层之前的处理，防止了不良影响的后续金属层。

公开(公告)号：US07385294B2

公开(公告)日：2008-06-10

申请号：US11162360

申请日：2005-09-08

申请人： Yi-Wei Chen ,  Chao-Ching Hsieh ,  Yi-Yiing Chiang ,  Tzung-Yu Hung ,  Yu-Lan Chang ,  Po-Chao Tsao ,  Chang-Chi Huang ,  Ming-Tsung Chen

发明人： Yi-Wei Chen ,  Chao-Ching Hsieh ,  Yi-Yiing Chiang ,  Tzung-Yu Hung ,  Yu-Lan Chang ,  Po-Chao Tsao ,  Chang-Chi Huang ,  Ming-Tsung Chen

IPC分类号： H01L23/48

CPC分类号： H01L29/665 ,  H01L21/324 ,  H01L29/4933

摘要： A semiconductor device having nickel silicide and a method for fabricating nickel silicide. A semiconductor substrate having a plurality of doped regions is provided. Subsequently, a nickel layer is formed on the semiconductor substrate, and a first rapid thermal process (RTP) is performed to react the nickel layer with the doped regions disposed thereunder. Thereafter, the unreacted nickel layer is removed, and a second rapid thermal process is performed to form a semiconductor device having nickel silicide. The second rapid thermal process is a spike anneal process whose process temperature is between 400 and 600° C.

摘要翻译： 具有硅化镍的半导体器件和制造硅化镍的方法。 提供具有多个掺杂区域的半导体衬底。 接着，在半导体基板上形成镍层，进行第一快速热处理（RTP），使镍层与配置在其上的掺杂区域反应。 此后，除去未反应的镍层，进行第二快速热处理以形成具有硅化镍的半导体器件。 第二快速热处理是工艺温度在400和600℃之间的尖峰退火工艺。

公开(公告)号：US20080132063A1

公开(公告)日：2008-06-05

申请号：US12017066

申请日：2008-01-21

申请人： Yu-Lan Chang ,  Chao-Ching Hsieh ,  Yi-Yiing Chiang ,  Yi-Wei Chen ,  Tzung-Yu Hung

发明人： Yu-Lan Chang ,  Chao-Ching Hsieh ,  Yi-Yiing Chiang ,  Yi-Wei Chen ,  Tzung-Yu Hung

IPC分类号： H01L21/44

CPC分类号： H01L29/665 ,  H01L29/6659 ,  H01L29/7833

摘要： A method of fabricating a semiconductor device is provided. The method includes forming a refractory metal alloy layer over a silicon-containing conductive layer. The refractory metal alloy layer is constituted of a first refractory metal and a second refractory metal. Thereafter, a cap layer is formed on the refractory metal alloy layer. A thermal process is performed so that the refractory metal alloy layer reacts with silicon of the silicon-containing conductive layer to form a refractory metal alloy salicide layer. Afterwards, an etch process with an etch solution is performed to removes the cap layer and the refractory metal alloy layer which has not been reacted and to form a protection layer on the refractory metal alloy salicide layer.

摘要翻译： 提供一种制造半导体器件的方法。 该方法包括在含硅导电层上形成难熔金属合金层。 难熔金属合金层由第一耐火金属和第二难熔金属构成。 此后，在难熔金属合金层上形成盖层。 进行热处理，使得难熔金属合金层与含硅导电层的硅反应形成难熔金属合金硅化物层。 之后，进行具有蚀刻溶液的蚀刻工艺以除去未被反应的盖层和难熔金属合金层，并在难熔金属合金自对准硅化物层上形成保护层。

公开(公告)号：US20070167009A1

公开(公告)日：2007-07-19

申请号：US11685209

申请日：2007-03-13

申请人： Yi-Wei Chen ,  Chao-Ching Hsieh ,  Yi-Yiing Chiang ,  Tzung-Yu Hung ,  Yu-Lan Chang ,  Po-Chao Tsao ,  Chang-Chi Huang ,  Ming-Tsung Chen

发明人： Yi-Wei Chen ,  Chao-Ching Hsieh ,  Yi-Yiing Chiang ,  Tzung-Yu Hung ,  Yu-Lan Chang ,  Po-Chao Tsao ,  Chang-Chi Huang ,  Ming-Tsung Chen

IPC分类号： H01L21/44

CPC分类号： H01L29/665 ,  H01L21/324 ,  H01L29/4933

摘要： A semiconductor device having nickel suicide and a method for fabricating nickel silicide. A semiconductor substrate having a plurality of doped regions is provided. Subsequently, a nickel layer is formed on the semiconductor substrate, and a first rapid thermal process (RTP) is performed to react the nickel layer with the doped regions disposed there under. Thereafter, the unreacted nickel layer is removed, and a second rapid thermal process is performed to form a semiconductor device having nickel silicide. The second rapid thermal process is a spike anneal process whose process temperature is between 400 and 600° C.

摘要翻译： 一种具有镍硅化物的半导体器件和一种制造硅化镍的方法。 提供具有多个掺杂区域的半导体衬底。 随后，在半导体衬底上形成镍层，并进行第一快速热处理（RTP）以使镍层与设置在其下方的掺杂区域反应。 此后，除去未反应的镍层，进行第二快速热处理以形成具有硅化镍的半导体器件。 第二快速热处理是工艺温度在400和600℃之间的尖峰退火工艺。

公开(公告)号：US07229920B2

公开(公告)日：2007-06-12

申请号：US11034400

申请日：2005-01-11

申请人： Yi-Wei Chen ,  Tzung-Yu Hung ,  Yi-Yiing Chiang ,  Chao-Ching Hsieh ,  Yu-Lan Chang

发明人： Yi-Wei Chen ,  Tzung-Yu Hung ,  Yi-Yiing Chiang ,  Chao-Ching Hsieh ,  Yu-Lan Chang

IPC分类号： H01L21/44

CPC分类号： H01L21/28518 ,  H01L21/324 ,  H01L29/66507 ,  H01L29/78

摘要： A method of fabricating a metal silicide layer over a substrate is provided. First, a hard mask layer is formed over a gate formed on a substrate and a portion of the substrate is exposed. Thereafter, a first metal silicide layer, which is a cobalt silicide or a titanium silicide layer, is formed on the exposed substrate. After that, the hard mask layer is removed and a second metal silicide layer is formed over the gate, wherein a material of the second metal silicide layer is selected from a group consisting of nickel silicide, platinum silicide, palladium silicide and nickel alloy. Since different metal silicide layers are formed on the substrate and the gate, the problem of having a high resistance in lines with a narrow line width and the problem of nickel silicide forming spikes and pipelines in the source region and the drain region are improved.

摘要翻译： 提供了一种在衬底上制造金属硅化物层的方法。 首先，在形成在基板上的栅极上形成硬掩模层，并且露出基板的一部分。 此后，在暴露的基板上形成作为硅化钴或硅化钛层的第一金属硅化物层。 之后，去除硬掩模层，在栅极上形成第二金属硅化物层，其中第二金属硅化物层的材料选自硅化镍，硅化矽，硅化钯和镍合金。 由于在基板和栅极上形成不同的金属硅化物层，所以提高了具有窄线宽度的线路中具有高电阻性和在源极区域和漏极区域中形成硅化镍和管线的问题。

公开(公告)号：US20060154474A1

公开(公告)日：2006-07-13

申请号：US11034400

申请日：2005-01-11

申请人： Yi-Wei Chen ,  Tzung-Yu Hung ,  Yi-Yiing Chiang ,  Chao-Ching Hsieh ,  Yu-Lan Chang

发明人： Yi-Wei Chen ,  Tzung-Yu Hung ,  Yi-Yiing Chiang ,  Chao-Ching Hsieh ,  Yu-Lan Chang

IPC分类号： H01L21/4763

CPC分类号： H01L21/28518 ,  H01L21/324 ,  H01L29/66507 ,  H01L29/78

摘要： A method of fabricating a metal silicide layer over a substrate is provided. First, a hard mask layer is formed over a gate formed on a substrate and a portion of the substrate is exposed. Thereafter, a first metal silicide layer, which is a cobalt silicide or a titanium silicide layer, is formed on the exposed substrate. After that, the hard mask layer is removed and a second metal silicide layer is formed over the gate, wherein a material of the second metal silicide layer is selected from a group consisting of nickel silicide, platinum silicide, palladium silicide and nickel alloy. Since different metal silicide layers are formed on the substrate and the gate, the problem of having a high resistance in lines with a narrow line width and the problem of nickel silicide forming spikes and pipelines in the source region and the drain region are improved.

摘要翻译： 提供了一种在衬底上制造金属硅化物层的方法。 首先，在形成在基板上的栅极上形成硬掩模层，并且露出基板的一部分。 此后，在暴露的基板上形成作为硅化钴或硅化钛层的第一金属硅化物层。 之后，去除硬掩模层，在栅极上形成第二金属硅化物层，其中第二金属硅化物层的材料选自硅化镍，硅化矽，硅化钯和镍合金。 由于在基板和栅极上形成不同的金属硅化物层，所以提高了具有窄线宽度的线路中具有高电阻性和在源极区域和漏极区域中形成硅化镍和管线的问题。

公开(公告)号：US20080067684A1

公开(公告)日：2008-03-20

申请号：US11944462

申请日：2007-11-23

申请人： Yu-Lan Chang ,  Chao-Ching Hsieh ,  Yi-Yiing Chiang ,  Yi-Wei Chen ,  Tzung-Yu Hung

发明人： Yu-Lan Chang ,  Chao-Ching Hsieh ,  Yi-Yiing Chiang ,  Yi-Wei Chen ,  Tzung-Yu Hung

IPC分类号： H01L23/48

CPC分类号： H01L29/665 ,  H01L29/6659 ,  H01L29/7833 ,  H01L2924/0002 ,  H01L2924/00

摘要： A semiconductor device including at least one conductive structure is provided. The conductive structure includes a silicon-containing conductive layer, a refractory metal salicide layer and a protection layer. The refractory metal salicide layer is disposed over the silicon-containing conductive layer. The protection layer is disposed over the refractory metal salicide layer. Another semiconductor device including at least one conductive structure is also provided. The conductive structure includes a silicon-containing conductive layer, a refractory metal alloy salicide layer and a protection layer. The refractory metal alloy salicide layer is disposed over the silicon-containing conductive layer. The refractory metal alloy salicide layer is formed from a reaction of silicon of the silicon-containing conductive layer and a refractory metal alloy layer which includes a first refractory metal and a second refractory metal. The protection layer is disposed over the refractory metal alloy salicide layer.

摘要翻译： 提供了包括至少一个导电结构的半导体器件。 导电结构包括含硅导电层，难熔金属硅化物层和保护层。 难熔金属硅化物层设置在含硅导电层上。 保护层设置在难熔金属硅化物层上。 还提供了包括至少一个导电结构的另一半导体器件。 导电结构包括含硅导电层，难熔金属合金自对准硅化物层和保护层。 难熔金属合金自对准硅化物层设置在含硅导电层的上方。 难熔金属合金自对准硅化物层由含硅导电层的硅与含有第一耐火金属和第二难熔金属的难熔金属合金层的反应形成。 保护层设置在难熔金属合金自对准硅化物层上。

公开(公告)号：US20070082494A1

公开(公告)日：2007-04-12

申请号：US11538061

申请日：2006-10-03

申请人： Yi-Wei Chen ,  Yi-Yiing Chiang ,  Yu-Lan Chang ,  Tzung-Yu Hung ,  Chao-Ching Hsieh

发明人： Yi-Wei Chen ,  Yi-Yiing Chiang ,  Yu-Lan Chang ,  Tzung-Yu Hung ,  Chao-Ching Hsieh

IPC分类号： C23F1/00 ,  H01L21/311 ,  B44C1/22

CPC分类号： H01L21/02057 ,  H01L21/28052 ,  H01L21/28518 ,  H01L29/665

摘要： A method for forming a metal silicide over a substrate is provided. The method comprises steps of performing a fluorine-containing plasma treatment on the substrate to remove a plurality of residual over the substrate, wherein the fluorine-containing plasma treatment is performed in a first tool system. Then, a vacuum system of the first tool system is broken. The substrate is transferred from the first tool system into a second tool system. A metal silicide layer is formed over the substrate in the second tool system.

摘要翻译： 提供了一种在衬底上形成金属硅化物的方法。 所述方法包括以下步骤：在所述基板上进行含氟等离子体处理以除去所述基板上的多个残留物，其中所述含氟等离子体处理在第一工具系统中进行。 然后，第一工具系统的真空系统被破坏。 基板从第一工具系统转移到第二工具系统中。 在第二工具系统中的衬底上形成金属硅化物层。

公开(公告)号：US20070020925A1

公开(公告)日：2007-01-25

申请号：US11161075

申请日：2005-07-22

申请人： Chao-Ching Hsieh ,  Yi-Yiing Chiang ,  Tzung-Yu Hung ,  Yi-Wei Chen ,  Yu-Lan Chang

发明人： Chao-Ching Hsieh ,  Yi-Yiing Chiang ,  Tzung-Yu Hung ,  Yi-Wei Chen ,  Yu-Lan Chang

IPC分类号： H01L21/44

CPC分类号： H01L21/28518 ,  H01L21/28052

摘要： A substrate having at least one silicon device is provided. A nickel platinum alloy layer is formed on the substrate. A rapid thermal process is performed to react the nickel platinum alloy layer with the silicon device to produce a nickel platinum silicide. A passivation layer is formed on the nickel platinum silicide followed by using a solution consisting of nitric acid and hydrochloric acid to remove unreacted portions of the nickel platinum alloy layer.

摘要翻译： 提供具有至少一个硅器件的衬底。 在该基板上形成镍铂合金层。 执行快速热处理以使镍铂合金层与硅器件反应以产生镍铂硅化物。 在镍铂硅化物上形成钝化层，然后使用由硝酸和盐酸组成的溶液来除去镍铂合金层的未反应部分。

公开(公告)号：US07649263B2

公开(公告)日：2010-01-19

申请号：US11944462

申请日：2007-11-23

申请人： Yu-Lan Chang ,  Chao-Ching Hsieh ,  Yi-Yiing Chiang ,  Yi-Wei Chen ,  Tzung-Yu Hung

发明人： Yu-Lan Chang ,  Chao-Ching Hsieh ,  Yi-Yiing Chiang ,  Yi-Wei Chen ,  Tzung-Yu Hung

IPC分类号： H01L23/48

CPC分类号： H01L29/665 ,  H01L29/6659 ,  H01L29/7833 ,  H01L2924/0002 ,  H01L2924/00

摘要： A semiconductor device including at least one conductive structure is provided. The conductive structure includes a silicon-containing conductive layer, a refractory metal salicide layer and a protection layer. The refractory metal salicide layer is disposed over the silicon-containing conductive layer. The protection layer is disposed over the refractory metal salicide layer. Another semiconductor device including at least one conductive structure is also provided. The conductive structure includes a silicon-containing conductive layer, a refractory metal alloy salicide layer and a protection layer. The refractory metal alloy salicide layer is disposed over the silicon-containing conductive layer. The refractory metal alloy salicide layer is formed from a reaction of silicon of the silicon-containing conductive layer and a refractory metal alloy layer which includes a first refractory metal and a second refractory metal. The protection layer is disposed over the refractory metal alloy salicide layer.

摘要翻译： 提供了包括至少一个导电结构的半导体器件。 导电结构包括含硅导电层，难熔金属硅化物层和保护层。 难熔金属硅化物层设置在含硅导电层上。 保护层设置在难熔金属硅化物层上。 还提供了包括至少一个导电结构的另一个半导体器件。 导电结构包括含硅导电层，难熔金属合金自对准硅化物层和保护层。 难熔金属合金自对准硅化物层设置在含硅导电层的上方。 难熔金属合金自对准硅化物层由含硅导电层的硅与含有第一耐火金属和第二难熔金属的难熔金属合金层的反应形成。 保护层设置在难熔金属合金自对准硅化物层上。