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    SEMICONDUCTOR DEVICE
    2.
    发明申请
    SEMICONDUCTOR DEVICE 有权
    半导体器件

    公开(公告)号：US20080067684A1

    公开(公告)日：2008-03-20

    申请号：US11944462

    申请日：2007-11-23

    申请人： Yu-Lan Chang ,  Chao-Ching Hsieh ,  Yi-Yiing Chiang ,  Yi-Wei Chen ,  Tzung-Yu Hung

    发明人： Yu-Lan Chang ,  Chao-Ching Hsieh ,  Yi-Yiing Chiang ,  Yi-Wei Chen ,  Tzung-Yu Hung

    IPC分类号： H01L23/48

    CPC分类号： H01L29/665 ,  H01L29/6659 ,  H01L29/7833 ,  H01L2924/0002 ,  H01L2924/00

    摘要： A semiconductor device including at least one conductive structure is provided. The conductive structure includes a silicon-containing conductive layer, a refractory metal salicide layer and a protection layer. The refractory metal salicide layer is disposed over the silicon-containing conductive layer. The protection layer is disposed over the refractory metal salicide layer. Another semiconductor device including at least one conductive structure is also provided. The conductive structure includes a silicon-containing conductive layer, a refractory metal alloy salicide layer and a protection layer. The refractory metal alloy salicide layer is disposed over the silicon-containing conductive layer. The refractory metal alloy salicide layer is formed from a reaction of silicon of the silicon-containing conductive layer and a refractory metal alloy layer which includes a first refractory metal and a second refractory metal. The protection layer is disposed over the refractory metal alloy salicide layer.

    摘要翻译： 提供了包括至少一个导电结构的半导体器件。 导电结构包括含硅导电层，难熔金属硅化物层和保护层。 难熔金属硅化物层设置在含硅导电层上。 保护层设置在难熔金属硅化物层上。 还提供了包括至少一个导电结构的另一半导体器件。 导电结构包括含硅导电层，难熔金属合金自对准硅化物层和保护层。 难熔金属合金自对准硅化物层设置在含硅导电层的上方。 难熔金属合金自对准硅化物层由含硅导电层的硅与含有第一耐火金属和第二难熔金属的难熔金属合金层的反应形成。 保护层设置在难熔金属合金自对准硅化物层上。

    METHOD FOR FORMING SILICIDE LAYER
    3.
    发明申请
    METHOD FOR FORMING SILICIDE LAYER 审中-公开
    形成硅胶层的方法

    公开(公告)号：US20070082494A1

    公开(公告)日：2007-04-12

    申请号：US11538061

    申请日：2006-10-03

    申请人： Yi-Wei Chen ,  Yi-Yiing Chiang ,  Yu-Lan Chang ,  Tzung-Yu Hung ,  Chao-Ching Hsieh

    发明人： Yi-Wei Chen ,  Yi-Yiing Chiang ,  Yu-Lan Chang ,  Tzung-Yu Hung ,  Chao-Ching Hsieh

    IPC分类号： C23F1/00 ,  H01L21/311 ,  B44C1/22

    CPC分类号： H01L21/02057 ,  H01L21/28052 ,  H01L21/28518 ,  H01L29/665

    摘要： A method for forming a metal silicide over a substrate is provided. The method comprises steps of performing a fluorine-containing plasma treatment on the substrate to remove a plurality of residual over the substrate, wherein the fluorine-containing plasma treatment is performed in a first tool system. Then, a vacuum system of the first tool system is broken. The substrate is transferred from the first tool system into a second tool system. A metal silicide layer is formed over the substrate in the second tool system.

    摘要翻译： 提供了一种在衬底上形成金属硅化物的方法。 所述方法包括以下步骤：在所述基板上进行含氟等离子体处理以除去所述基板上的多个残留物，其中所述含氟等离子体处理在第一工具系统中进行。 然后，第一工具系统的真空系统被破坏。 基板从第一工具系统转移到第二工具系统中。 在第二工具系统中的衬底上形成金属硅化物层。

    METHOD OF FORMING A NICKEL PLATINUM SILICIDE
    4.
    发明申请
    METHOD OF FORMING A NICKEL PLATINUM SILICIDE 审中-公开
    形成镍硅酸钠的方法

    公开(公告)号：US20070020925A1

    公开(公告)日：2007-01-25

    申请号：US11161075

    申请日：2005-07-22

    申请人： Chao-Ching Hsieh ,  Yi-Yiing Chiang ,  Tzung-Yu Hung ,  Yi-Wei Chen ,  Yu-Lan Chang

    发明人： Chao-Ching Hsieh ,  Yi-Yiing Chiang ,  Tzung-Yu Hung ,  Yi-Wei Chen ,  Yu-Lan Chang

    IPC分类号： H01L21/44

    CPC分类号： H01L21/28518 ,  H01L21/28052

    摘要： A substrate having at least one silicon device is provided. A nickel platinum alloy layer is formed on the substrate. A rapid thermal process is performed to react the nickel platinum alloy layer with the silicon device to produce a nickel platinum silicide. A passivation layer is formed on the nickel platinum silicide followed by using a solution consisting of nitric acid and hydrochloric acid to remove unreacted portions of the nickel platinum alloy layer.

    摘要翻译： 提供具有至少一个硅器件的衬底。 在该基板上形成镍铂合金层。 执行快速热处理以使镍铂合金层与硅器件反应以产生镍铂硅化物。 在镍铂硅化物上形成钝化层，然后使用由硝酸和盐酸组成的溶液来除去镍铂合金层的未反应部分。

    Method of fabricating nickel silicide
    5.
    发明授权
    Method of fabricating nickel silicide 有权
    制造硅化镍的方法

    公开(公告)号：US07572722B2

    公开(公告)日：2009-08-11

    申请号：US11685209

    申请日：2007-03-13

    申请人： Yi-Wei Chen ,  Chao-Ching Hsieh ,  Yi-Yiing Chiang ,  Tzung-Yu Hung ,  Yu-Lan Chang ,  Po-Chao Tsao ,  Chang-Chi Huang ,  Ming-Tsung Chen

    发明人： Yi-Wei Chen ,  Chao-Ching Hsieh ,  Yi-Yiing Chiang ,  Tzung-Yu Hung ,  Yu-Lan Chang ,  Po-Chao Tsao ,  Chang-Chi Huang ,  Ming-Tsung Chen

    IPC分类号： H01L21/3205

    CPC分类号： H01L29/665 ,  H01L21/324 ,  H01L29/4933

    摘要： A semiconductor device having nickel silicide and a method for fabricating nickel silicide. A semiconductor substrate having a plurality of doped regions is provided. Subsequently, a nickel layer is formed on the semiconductor substrate, and a first rapid thermal process (RTP) is performed to react the nickel layer with the doped regions disposed there under. Thereafter, the unreacted nickel layer is removed, and a second rapid thermal process is performed to form a semiconductor device having nickel silicide. The second rapid thermal process is a spike anneal process whose process temperature is between 400 and 600° C.

    摘要翻译： 具有硅化镍的半导体器件和制造硅化镍的方法。 提供具有多个掺杂区域的半导体衬底。 随后，在半导体衬底上形成镍层，并进行第一快速热处理（RTP）以使镍层与设置在其下方的掺杂区域反应。 此后，除去未反应的镍层，进行第二快速热处理以形成具有硅化镍的半导体器件。 第二快速热处理是工艺温度在400和600℃之间的尖峰退火工艺。

    Fabrication method of semiconductor device
    6.
    发明授权
    Fabrication method of semiconductor device 有权
    半导体器件的制造方法

    公开(公告)号：US07344978B2

    公开(公告)日：2008-03-18

    申请号：US11160233

    申请日：2005-06-15

    申请人： Yu-Lan Chang ,  Chao-Ching Hsieh ,  Yi-Yiing Chiang ,  Yi-Wei Chen ,  Tzung-Yu Hung

    发明人： Yu-Lan Chang ,  Chao-Ching Hsieh ,  Yi-Yiing Chiang ,  Yi-Wei Chen ,  Tzung-Yu Hung

    IPC分类号： H01L21/44

    CPC分类号： H01L29/665 ,  H01L29/6659 ,  H01L29/7833 ,  H01L2924/0002 ,  H01L2924/00

    摘要： A semiconductor device including at least one conductive structure is provided. The conductive structure includes a silicon-containing conductive layer, a refractory metal salicide layer and a protection layer. The refractory metal salicide layer is disposed over the silicon-containing conductive layer. The protection layer is disposed over the refractory metal salicide layer. Another semiconductor device including at least one conductive structure is also provided. The conductive structure includes a silicon-containing conductive layer, a refractory metal alloy salicide layer and a protection layer. The refractory metal alloy salicide layer is disposed over the silicon-containing conductive layer. The refractory metal alloy salicide layer is formed from a reaction of silicon of the silicon-containing conductive layer and a refractory metal alloy layer which includes a first refractory metal and a second refractory metal. The protection layer is disposed over the refractory metal alloy salicide layer.

    摘要翻译： 提供了包括至少一个导电结构的半导体器件。 导电结构包括含硅导电层，难熔金属硅化物层和保护层。 难熔金属硅化物层设置在含硅导电层上。 保护层设置在难熔金属硅化物层上。 还提供了包括至少一个导电结构的另一个半导体器件。 导电结构包括含硅导电层，难熔金属合金自对准硅化物层和保护层。 难熔金属合金自对准硅化物层设置在含硅导电层的上方。 难熔金属合金自对准硅化物层由含硅导电层的硅与含有第一耐火金属和第二难熔金属的难熔金属合金层的反应形成。 保护层设置在难熔金属合金自对准硅化物层上。

    SEMICONDUCTOR DEVICE AND FABRICATION METHOD THEREOF
    7.
    发明申请
    SEMICONDUCTOR DEVICE AND FABRICATION METHOD THEREOF 有权
    半导体器件及其制造方法

    公开(公告)号：US20060284263A1

    公开(公告)日：2006-12-21

    申请号：US11160233

    申请日：2005-06-15

    申请人： Yu-Lan Chang ,  Chao-Ching Hsieh ,  Yi-Yiing Chiang ,  Yi-Wei Chen ,  Tzung-Yu Hung

    发明人： Yu-Lan Chang ,  Chao-Ching Hsieh ,  Yi-Yiing Chiang ,  Yi-Wei Chen ,  Tzung-Yu Hung

    IPC分类号： H01L29/94

    CPC分类号： H01L29/665 ,  H01L29/6659 ,  H01L29/7833 ,  H01L2924/0002 ,  H01L2924/00

    摘要： A semiconductor device including at least one conductive structure is provided. The conductive structure includes a silicon-containing conductive layer, a refractory metal salicide layer and a protection layer. The refractory metal salicide layer is disposed over the silicon-containing conductive layer. The protection layer is disposed over the refractory metal salicide layer. Another semiconductor device including at least one conductive structure is also provided. The conductive structure includes a silicon-containing conductive layer, a refractory metal alloy salicide layer and a protection layer. The refractory metal alloy salicide layer is disposed over the silicon-containing conductive layer. The refractory metal alloy salicide layer is formed from a reaction of silicon of the silicon-containing conductive layer and a refractory metal alloy layer which includes a first refractory metal and a second refractory metal. The protection layer is disposed over the refractory metal alloy salicide layer.

    摘要翻译： 提供了包括至少一个导电结构的半导体器件。 导电结构包括含硅导电层，难熔金属硅化物层和保护层。 难熔金属硅化物层设置在含硅导电层上。 保护层设置在难熔金属硅化物层上。 还提供了包括至少一个导电结构的另一半导体器件。 导电结构包括含硅导电层，难熔金属合金自对准硅化物层和保护层。 难熔金属合金自对准硅化物层设置在含硅导电层的上方。 难熔金属合金自对准硅化物层由含硅导电层的硅与含有第一耐火金属和第二难熔金属的难熔金属合金层的反应形成。 保护层设置在难熔金属合金自对准硅化物层上。

    Semiconductor device
    8.
    发明授权
    Semiconductor device 有权
    半导体器件

    公开(公告)号：US07649263B2

    公开(公告)日：2010-01-19

    申请号：US11944462

    申请日：2007-11-23

    申请人： Yu-Lan Chang ,  Chao-Ching Hsieh ,  Yi-Yiing Chiang ,  Yi-Wei Chen ,  Tzung-Yu Hung

    发明人： Yu-Lan Chang ,  Chao-Ching Hsieh ,  Yi-Yiing Chiang ,  Yi-Wei Chen ,  Tzung-Yu Hung

    IPC分类号： H01L23/48

    CPC分类号： H01L29/665 ,  H01L29/6659 ,  H01L29/7833 ,  H01L2924/0002 ,  H01L2924/00

    摘要： A semiconductor device including at least one conductive structure is provided. The conductive structure includes a silicon-containing conductive layer, a refractory metal salicide layer and a protection layer. The refractory metal salicide layer is disposed over the silicon-containing conductive layer. The protection layer is disposed over the refractory metal salicide layer. Another semiconductor device including at least one conductive structure is also provided. The conductive structure includes a silicon-containing conductive layer, a refractory metal alloy salicide layer and a protection layer. The refractory metal alloy salicide layer is disposed over the silicon-containing conductive layer. The refractory metal alloy salicide layer is formed from a reaction of silicon of the silicon-containing conductive layer and a refractory metal alloy layer which includes a first refractory metal and a second refractory metal. The protection layer is disposed over the refractory metal alloy salicide layer.

    摘要翻译： 提供了包括至少一个导电结构的半导体器件。 导电结构包括含硅导电层，难熔金属硅化物层和保护层。 难熔金属硅化物层设置在含硅导电层上。 保护层设置在难熔金属硅化物层上。 还提供了包括至少一个导电结构的另一个半导体器件。 导电结构包括含硅导电层，难熔金属合金自对准硅化物层和保护层。 难熔金属合金自对准硅化物层设置在含硅导电层的上方。 难熔金属合金自对准硅化物层由含硅导电层的硅与含有第一耐火金属和第二难熔金属的难熔金属合金层的反应形成。 保护层设置在难熔金属合金自对准硅化物层上。

    Fabrication method of semiconductor device
    9.
    发明授权
    Fabrication method of semiconductor device 有权
    半导体器件的制造方法

    公开(公告)号：US07595264B2

    公开(公告)日：2009-09-29

    申请号：US12017066

    申请日：2008-01-21

    申请人： Yu-Lan Chang ,  Chao-Ching Hsieh ,  Yi-Yiing Chiang ,  Yi-Wei Chen ,  Tzung-Yu Hung

    发明人： Yu-Lan Chang ,  Chao-Ching Hsieh ,  Yi-Yiing Chiang ,  Yi-Wei Chen ,  Tzung-Yu Hung

    IPC分类号： H01L21/44

    CPC分类号： H01L29/665 ,  H01L29/6659 ,  H01L29/7833

    摘要： A method of fabricating a semiconductor device is provided. The method includes forming a refractory metal alloy layer over a silicon-containing conductive layer. The refractory metal alloy layer is constituted of a first refractory metal and a second refractory metal. Thereafter, a cap layer is formed on the refractory metal alloy layer. A thermal process is performed so that the refractory metal alloy layer reacts with silicon of the silicon-containing conductive layer to form a refractory metal alloy salicide layer. Afterwards, an etch process with an etch solution is performed to removes the cap layer and the refractory metal alloy layer which has not been reacted and to form a protection layer on the refractory metal alloy salicide layer.

    摘要翻译： 提供一种制造半导体器件的方法。 该方法包括在含硅导电层上形成难熔金属合金层。 难熔金属合金层由第一耐火金属和第二难熔金属构成。 此后，在难熔金属合金层上形成盖层。 进行热处理，使得难熔金属合金层与含硅导电层的硅反应形成难熔金属合金硅化物层。 之后，进行具有蚀刻溶液的蚀刻工艺以除去未被反应的盖层和难熔金属合金层，并在难熔金属合金自对准硅化物层上形成保护层。