公开(公告)号：US20070042556A1

公开(公告)日：2007-02-22

申请号：US11161788

申请日：2005-08-17

Applicant: Chao-Sheng Lin

Inventor： Chao-Sheng Lin

IPC: H01L21/336

CPC classification number: H01L29/6659 ,  H01L29/665 ,  H01L29/6653 ,  H01L29/6656

Abstract: A method of fabricating a metal oxide semiconductor transistor is described. A substrate having device isolation structures thereon is provided. A stack gate structure is formed over the substrate. An etching stop layer is formed over the substrate to cover the stack gate structure, the substrate and the device isolation structures. Thereafter, spacers are formed on the sidewalls of the stack gate structure. The spacers and the etching stop layer have different etching selectivity. A source region and a drain region are formed in the substrate beside the spacer on each side of the stack gate structure using the stack gate structure and the spacers as a mask. Then, the spacers are removed and a lightly doped region and a lightly doped drain region are formed in the substrate on each side of the stack gate structure using the stack gate structure as a mask.

Abstract translation: 对金属氧化物半导体晶体管的制造方法进行说明。 提供其上具有器件隔离结构的衬底。 堆叠栅极结构形成在衬底上。 在衬底上形成蚀刻停止层以覆盖堆叠栅极结构，衬底和器件隔离结构。 此后，在堆叠栅极结构的侧壁上形成间隔物。 间隔物和蚀刻停止层具有不同的蚀刻选择性。 使用堆叠栅极结构和间隔物作为掩模，在堆叠栅极结构的每一侧上的间隔物旁边的基板中形成源极区和漏极区。 然后，使用堆叠栅极结构作为掩模，去除间隔物，并且在堆叠栅极结构的每一侧上的衬底中形成轻掺杂区域和轻掺杂漏极区域。

公开(公告)号：US06455389B1

公开(公告)日：2002-09-24

申请号：US09872261

申请日：2001-06-01

Applicant: Kuo-Tai Huang ,  Chao-Sheng Lin ,  Li-Wei Cheng

Inventor： Kuo-Tai Huang ,  Chao-Sheng Lin ,  Li-Wei Cheng

IPC: H01L21336

CPC classification number: H01L29/6659 ,  H01L29/4983 ,  H01L29/6656

Abstract: This invention relates to a method that prevents by-productions from moving from a spacer. In particular by using an offset liner, a liner with a treated surface and a spacer that is formed by using the atomic layer deposition method or the rapid thermal chemical vapor deposition method. The present invention uses a liner, whose surface is treated, and a spacer, which is formed by using the atomic layer deposition method or the rapid thermal chemical vapor deposition method. This prevents by-product ions from moving from the spacer to other regions by using actions in diffusion and drift to affect the voltage stability of the semiconductor device after the current is connected. This defect will further affect qualities of the semiconductor device.

Abstract translation: 本发明涉及防止副产物从间隔物移动的方法。 特别是通过使用偏移衬垫，具有经处理的表面的衬垫和通过使用原子层沉积法或快速热化学气相沉积法形成的间隔物。 本发明使用表面被处理的衬垫和使用原子层沉积法或快速热化学气相沉积法形成的间隔物。 通过使用扩散和漂移中的动作来影响电流连接后的半导体器件的电压稳定性，防止副产物离子从间隔物移动到其它区域。 该缺陷将进一步影响半导体器件的质量。