-
1.发明授权Unique feature design enabling structural integrity for advanced low K semiconductor chips 有权独特的功能设计使得先进的低K半导体芯片具有结构完整性公开(公告)号：US06650010B2
公开(公告)日：2003-11-18
申请号：US10078174
申请日：2002-02-15
IPC分类号： H01L2312
CPC分类号： H01L22/32 , H01L23/5226 , H01L23/5329 , H01L24/05 , H01L2224/0401 , H01L2224/04042 , H01L2224/05096 , H01L2224/05554 , H01L2224/06131 , H01L2224/06155 , H01L2924/12044
摘要： A mesh-like reinforcing structure to inhibit delamination and cracking is fabricated in a multilayer semiconductor device using low-k dielectric materials and copper-based metallurgy. The mesh-like interconnection structure comprises conductive pads interconnected by conductive lines at each wiring level with each pad conductively connected to its adjacent pad at the next wiring level by a plurality of conductive vias. The conductive pads, lines and vias are fabricated during the normal BEOL wiring level integration process. The reinforcing structure provides both vertical and horizontal reinforcement and may be fabricated on the periphery of the active device region or within open regions of the device that are susceptible to delamination and cracking.
摘要翻译： 在使用低k介电材料和铜基冶金的多层半导体器件中制造用于抑制分层和破裂的网状增强结构。 网状互连结构包括在每个布线层处由导线互连的导电焊盘，每个焊盘通过多个导电通孔在下一个布线电平下与其相邻的焊盘导电连接。 导电焊盘，线路和通孔在正常的BEOL布线级整合过程中制造。 加强结构提供垂直和水平加强件，并且可以在活动装置区域的周边或在易于分层和破裂的装置的开放区域内制造。
-
2.发明授权Unique feature design enabling structural integrity for advanced low k semiconductor chips 有权独特的功能设计使先进的低k半导体芯片具有结构完整性公开(公告)号：US06815346B2
公开(公告)日：2004-11-09
申请号：US10437208
申请日：2003-05-13
IPC分类号： H01L2144
CPC分类号： H01L22/32 , H01L23/5226 , H01L23/5329 , H01L24/05 , H01L2224/0401 , H01L2224/04042 , H01L2224/05096 , H01L2224/05554 , H01L2224/06131 , H01L2224/06155 , H01L2924/12044
摘要： A mesh-like reinforcing structure to inhibit delamination and cracking is fabricated in a multilayer semiconductor device using low-k dielectric materials and copper-based metallurgy. The mesh-like interconnection structure comprises conductive pads interconnected by conductive lines at each wiring level with each pad conductively connected to its adjacent pad at the next wiring level by a plurality of conductive vias. The conductive pads, lines and vias are fabricated during the normal BEOL wiring level integration process. The reinforcing structure provides both vertical and horizontal reinforcement and may be fabricated on the periphery of the active device region or within open regions of the device that are susceptible to delamination and cracking.
摘要翻译： 在使用低k介电材料和铜基冶金的多层半导体器件中制造用于抑制分层和破裂的网状增强结构。 网状互连结构包括在每个布线层处由导线互连的导电焊盘，每个焊盘通过多个导电通孔在下一个布线电平下与其相邻的焊盘导电连接。 导电焊盘，线路和通孔在正常的BEOL布线级整合过程中制造。 加强结构提供垂直和水平加强件，并且可以在活动装置区域的周边或在易于分层和破裂的装置的开放区域内制造。
-
搜索结果
2 条记录 (耗时 0.022 秒)
