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1.发明授权Method and apparatus for modeling multi-terminal MOS device for LVS and PDK 有权用于建立LVS和PDK的多端MOS器件的方法和装置公开(公告)号：US09000524B2
公开(公告)日：2015-04-07
申请号：US13081092
申请日：2011-04-06
申请人： Chau-Wen Wei , Cheng-Te Chang , Chin-yuan Huang , Chih Ming Yang , Yi-Kan Cheng
发明人： Chau-Wen Wei , Cheng-Te Chang , Chin-yuan Huang , Chih Ming Yang , Yi-Kan Cheng
IPC分类号： H01L29/66 , H01L27/088 , H01L21/8234 , H01L21/8238 , H01L27/06 , H01L27/02 , G06F17/50
CPC分类号： G06F17/5081 , G06F17/5036 , G06F17/5072 , G06F2217/66 , H01L21/823493 , H01L21/823892 , H01L23/528 , H01L27/0207 , H01L27/0629 , H01L27/088 , H01L28/20
摘要： An apparatus comprises two n-type metal oxide semiconductor (MOS) devices formed next to each other. Each n-type MOS device further includes a pair of face-to-face diodes formed in an isolation ring. A method of modeling the apparatus comprises reusing four-terminal MOS device models in standard cell libraries and combining the four-terminal MOS device model and the isolation ring model into a 4T MOS plus isolation ring model. The method of modeling the apparatus further comprises adding a dummy device between a body contact of the first n-type MOS device and a body contact of the second n-type MOS device.
摘要翻译： 一种装置包括彼此相邻形成的两个n型金属氧化物半导体（MOS）器件。 每个n型MOS器件还包括形成在隔离环中的一对面对二极管。 对该装置进行建模的方法包括在标准单元库中重新使用四端MOS器件模型，并将四端MOS器件模型和隔离环模型组合成4T MOS加隔离环模型。 对该装置进行建模的方法还包括在第一n型MOS器件的体接触和第二n型MOS器件的体接触之间添加伪器件。
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2.发明申请Method and Apparatus for Modeling Multi-terminal MOS Device for LVS and PDK 有权LVS和PDK多端MOS器件建模方法与装置公开(公告)号：US20120256271A1
公开(公告)日：2012-10-11
申请号：US13081092
申请日：2011-04-06
申请人： Chau-Wen Wei , Cheng-Te Chang , Chin-yuan Huang , Chih Ming Yang , Yi-Kan Cheng
发明人： Chau-Wen Wei , Cheng-Te Chang , Chin-yuan Huang , Chih Ming Yang , Yi-Kan Cheng
CPC分类号： G06F17/5081 , G06F17/5036 , G06F17/5072 , G06F2217/66 , H01L21/823493 , H01L21/823892 , H01L23/528 , H01L27/0207 , H01L27/0629 , H01L27/088 , H01L28/20
摘要： An apparatus comprises two n-type metal oxide semiconductor (MOS) devices formed next to each other. Each n-type MOS device further includes a pair of face-to-face diodes formed in an isolation ring. A method of modeling the apparatus comprises reusing four-terminal MOS device models in standard cell libraries and combining the four-terminal MOS device model and the isolation ring model into a 4T MOS plus isolation ring model. The method of modeling the apparatus further comprises adding a dummy device between a body contact of the first n-type MOS device and a body contact of the second n-type MOS device.
摘要翻译： 一种装置包括彼此相邻形成的两个n型金属氧化物半导体（MOS）器件。 每个n型MOS器件还包括形成在隔离环中的一对面对二极管。 对该装置进行建模的方法包括在标准单元库中重新使用四端MOS器件模型，并将四端MOS器件模型和隔离环模型组合成4T MOS加隔离环模型。 对该装置进行建模的方法还包括在第一n型MOS器件的体接触和第二n型MOS器件的体接触之间添加伪器件。
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