公开(公告)号：US20110193089A1

公开(公告)日：2011-08-11

申请号：US12753098

申请日：2010-04-01

申请人： Cheng-Wei Chou ,  Hsueh-Hsing Lu ,  Hung-Che Ting ,  Tsung-Hsiang Shih ,  Chia-Yu Chen

发明人： Cheng-Wei Chou ,  Hsueh-Hsing Lu ,  Hung-Che Ting ,  Tsung-Hsiang Shih ,  Chia-Yu Chen

IPC分类号： H01L33/00 ,  H01L21/336

CPC分类号： H01L29/7869 ,  H01L27/1225

摘要： A pixel structure including a substrate, a gate, an insulation layer, a metal oxide semiconductor (MOS) layer, a source and a drain, at least one film layer, and a first electrode layer is provided. The gate is disposed on the substrate. The insulation layer covers the gate. The MOS layer is disposed on the insulation layer above the gate. The source and the drain are disposed on the MOS layer. The film layer covers the MOS layer and includes a transparent photocatalytic material, wherein the transparent photocatalytic material blocks ultraviolet light from reaching the MOS layer. The first electrode layer is electrically connected to the source or the drain.

摘要翻译： 提供了包括基板，栅极，绝缘层，金属氧化物半导体（MOS）层，源极和漏极，至少一个膜层和第一电极层的像素结构。 栅极设置在基板上。 绝缘层覆盖门。 MOS层设置在栅极上方的绝缘层上。 源极和漏极设置在MOS层上。 膜层覆盖MOS层，并且包括透明光催化材料，其中透明光催化材料阻挡紫外光到达MOS层。 第一电极层电连接到源极或漏极。

公开(公告)号：US08541779B1

公开(公告)日：2013-09-24

申请号：US13606027

申请日：2012-09-07

申请人： Hong-Syu Chen ,  Shou-Wei Fang ,  Jen-Yu Lee ,  Tsung-Hsiang Shih ,  Hsueh-Hsing Lu ,  Chia-Yu Chen

发明人： Hong-Syu Chen ,  Shou-Wei Fang ,  Jen-Yu Lee ,  Tsung-Hsiang Shih ,  Hsueh-Hsing Lu ,  Chia-Yu Chen

IPC分类号： H01L29/08

CPC分类号： H01L27/3246

摘要： A pixel structure of an organic electroluminescence apparatus includes at least an active device connected to a scan line and a data line, a first electrode, a dielectric material layer, a first isolating layer, a second isolating layer, an organic light-emitting material layer and a second electrode. The dielectric material layer is disposed on the first electrode and has a first opening to expose the first electrode. The first isolating layer disposed on the dielectric material layer includes an oxide semiconductor material and has a second opening to expose the first electrode. The second isolating layer is disposed on the first isolating layer and has a third opening to expose the first electrode in the first opening and the first isolating layer in a sidewall of the second opening. The organic light-emitting material layer is in the third opening. The second electrode is on the organic light-emitting layer.

摘要翻译： 有机电致发光装置的像素结构至少包括连接到扫描线和数据线的有源器件，第一电极，电介质材料层，第一隔离层，第二隔离层，有机发光材料层 和第二电极。 介电材料层设置在第一电极上，并具有第一开口以暴露第一电极。 设置在电介质材料层上的第一绝缘层包括氧化物半导体材料，并具有第二开口以暴露第一电极。 第二绝缘层设置在第一隔离层上，并且具有第三开口以暴露第一开口中的第一电极和第二开口的侧壁中的第一隔离层。 有机发光材料层位于第三开口内。 第二电极在有机发光层上。

公开(公告)号：US20130134425A1

公开(公告)日：2013-05-30

申请号：US13615661

申请日：2012-09-14

申请人： Yi-Chen Chung ,  Chia-Yu Chen ,  Hui-Ling Ku ,  Yu-Hung Chen ,  Chi-Wei Chou ,  Fan-Wei Chang ,  Hsueh-Hsing Lu ,  Hung-Che Ting

发明人： Yi-Chen Chung ,  Chia-Yu Chen ,  Hui-Ling Ku ,  Yu-Hung Chen ,  Chi-Wei Chou ,  Fan-Wei Chang ,  Hsueh-Hsing Lu ,  Hung-Che Ting

IPC分类号： H01L21/336 ,  H01L29/786 ,  H01L27/15 ,  H01L33/08

CPC分类号： H01L27/1288 ,  H01L21/28008 ,  H01L21/31133 ,  H01L27/1222 ,  H01L27/1225 ,  H01L27/124 ,  H01L2227/323

摘要： A manufacturing method of an array substrate includes the following steps. A gate electrode and a gate insulator layer are successively formed on a substrate. A semiconductor layer, an etching stop layer, a hard mask layer, and a second patterned photoresist are successively formed on the gate insulator layer. The second patterned photoresist is employed for performing an over etching process to the hard mask layer to form a patterned hard mask layer. The second patterned photoresist is employed for performing a first etching process to the etching stop layer. The second patterned photoresist is then employed for performing a second etching process to the semiconductor layer to form a patterned semiconductor layer. The etching stop layer uncovered by the patterned hard mask layer is then removed for forming a patterned etching stop layer.

摘要翻译： 阵列基板的制造方法包括以下步骤。 在基板上依次形成栅极电极和栅极绝缘体层。 在栅极绝缘体层上依次形成半导体层，蚀刻停止层，硬掩模层和第二图案化光致抗蚀剂。 第二图案化的光致抗蚀剂用于对硬掩模层进行过蚀刻工艺以形成图案化的硬掩模层。 第二图案化光刻胶用于对蚀刻停止层进行第一蚀刻处理。 然后使用第二图案化的光致抗蚀剂来对半导体层执行第二蚀刻工艺以形成图案化的半导体层。 由图案化的硬掩模层未覆盖的蚀刻停止层然后被去除以形成图案化的蚀刻停止层。

公开(公告)号：US08969146B2

公开(公告)日：2015-03-03

申请号：US13615661

申请日：2012-09-14

申请人： Yi-Chen Chung ,  Chia-Yu Chen ,  Hui-Ling Ku ,  Yu-Hung Chen ,  Chi-Wei Chou ,  Fan-Wei Chang ,  Hsueh-Hsing Lu ,  Hung-Che Ting

发明人： Yi-Chen Chung ,  Chia-Yu Chen ,  Hui-Ling Ku ,  Yu-Hung Chen ,  Chi-Wei Chou ,  Fan-Wei Chang ,  Hsueh-Hsing Lu ,  Hung-Che Ting

IPC分类号： H01L21/84

CPC分类号： H01L27/1288 ,  H01L21/28008 ,  H01L21/31133 ,  H01L27/1222 ,  H01L27/1225 ,  H01L27/124 ,  H01L2227/323

摘要： A manufacturing method of an array substrate includes the following steps. A gate electrode and a gate insulator layer are successively formed on a substrate. A semiconductor layer, an etching stop layer, a hard mask layer, and a second patterned photoresist are successively formed on the gate insulator layer. The second patterned photoresist is employed for performing an over etching process to the hard mask layer to form a patterned hard mask layer. The second patterned photoresist is employed for performing a first etching process to the etching stop layer. The second patterned photoresist is then employed for performing a second etching process to the semiconductor layer to form a patterned semiconductor layer. The etching stop layer uncovered by the patterned hard mask layer is then removed for forming a patterned etching stop layer.

摘要翻译： 阵列基板的制造方法包括以下步骤。 在基板上依次形成栅极电极和栅极绝缘体层。 在栅极绝缘体层上依次形成半导体层，蚀刻停止层，硬掩模层和第二图案化光致抗蚀剂。 第二图案化的光致抗蚀剂用于对硬掩模层进行过蚀刻工艺以形成图案化的硬掩模层。 第二图案化光刻胶用于对蚀刻停止层进行第一蚀刻处理。 然后使用第二图案化的光致抗蚀剂来对半导体层执行第二蚀刻工艺以形成图案化的半导体层。 由图案化的硬掩模层未覆盖的蚀刻停止层然后被去除以形成图案化的蚀刻停止层。

公开(公告)号：US20120168743A1

公开(公告)日：2012-07-05

申请号：US13097082

申请日：2011-04-29

申请人： Liu-Chung Lee ,  Hung-Che Ting ,  Chia-Yu Chen

发明人： Liu-Chung Lee ,  Hung-Che Ting ,  Chia-Yu Chen

IPC分类号： H01L29/12 ,  H01L21/336

CPC分类号： H01L29/7869 ,  H01L29/78693

摘要： A thin film transistor (TFT) including a gate, a gate insulator, an oxide semiconductor channel layer, a source, and a drain is provided. The gate insulator covers the gate, while the oxide semiconductor channel layer is configured on the gate insulator and located above the gate. The oxide semiconductor channel layer includes a first sub-layer and a second sub-layer located on the first sub-layer. An oxygen content of the first sub-layer is lower than an oxygen content of the second sub-layer. The source and the drain are configured on a portion of the second sub-layer. In addition, a fabricating method of the above-mentioned TFT is also provided.

摘要翻译： 提供了包括栅极，栅极绝缘体，氧化物半导体沟道层，源极和漏极的薄膜晶体管（TFT）。 栅极绝缘体覆盖栅极，而氧化物半导体沟道层配置在栅极绝缘体上并位于栅极上方。 氧化物半导体沟道层包括位于第一子层上的第一子层和第二子层。 第一子层的氧含量低于第二子层的氧含量。 源极和漏极配置在第二子层的一部分上。 此外，还提供了上述TFT的制造方法。

公开(公告)号：US07981708B1

公开(公告)日：2011-07-19

申请号：US12908872

申请日：2010-10-20

申请人： Liu-Chung Lee ,  Hung-Che Ting ,  Chia-Yu Chen

发明人： Liu-Chung Lee ,  Hung-Che Ting ,  Chia-Yu Chen

IPC分类号： H01L21/00

CPC分类号： H01L27/3248 ,  H01L27/1225 ,  H01L27/3262

摘要： A method of fabricating a pixel structure is provided. A gate electrode is formed on a substrate, and a dielectric layer is formed on the gate electrode. A patterned metal oxide semiconductor layer and a patterned metallic etching stop layer are formed on the dielectric layer above the gate electrode. A first conductive layer is formed to cover the patterned metallic etching stop layer and the dielectric layer. The first conductive layer is patterned by using the patterned metallic etching stop layer as an etching stop layer to form a source and a drain. A second conductive layer is formed to cover the source, the drain and the dielectric layer. The second conductive layer is patterned by using the patterned metallic etching stop layer as an etching stop layer to form a first electrode layer. The patterned metallic etching stop layer exposed between the source and the drain is removed.

摘要翻译： 提供了一种制造像素结构的方法。 在基板上形成栅电极，在栅电极上形成介电层。 在栅电极上的电介质层上形成图案化的金属氧化物半导体层和图案化的金属蚀刻停止层。 形成第一导电层以覆盖图案化的金属蚀刻停止层和电介质层。 通过使用图案化的金属蚀刻停止层作为蚀刻停止层来形成第一导电层以形成源极和漏极。 形成第二导电层以覆盖源极，漏极和介电层。 通过使用图案化的金属蚀刻停止层作为蚀刻停止层来图案化第二导电层，以形成第一电极层。 去除在源极和漏极之间暴露的图案化金属蚀刻停止层。

公开(公告)号：US08647934B2

公开(公告)日：2014-02-11

申请号：US13097082

申请日：2011-04-29

申请人： Liu-Chung Lee ,  Hung-Che Ting ,  Chia-Yu Chen

发明人： Liu-Chung Lee ,  Hung-Che Ting ,  Chia-Yu Chen

IPC分类号： H01L21/84

CPC分类号： H01L29/7869 ,  H01L29/78693

摘要： A thin film transistor (TFT) including a gate, a gate insulator, an oxide semiconductor channel layer, a source, and a drain is provided. The gate insulator covers the gate, while the oxide semiconductor channel layer is configured on the gate insulator and located above the gate. The oxide semiconductor channel layer includes a first sub-layer and a second sub-layer located on the first sub-layer. An oxygen content of the first sub-layer is lower than an oxygen content of the second sub-layer. The source and the drain are configured on a portion of the second sub-layer. In addition, a fabricating method of the above-mentioned TFT is also provided.

摘要翻译： 提供了包括栅极，栅极绝缘体，氧化物半导体沟道层，源极和漏极的薄膜晶体管（TFT）。 栅极绝缘体覆盖栅极，而氧化物半导体沟道层配置在栅极绝缘体上并位于栅极上方。 氧化物半导体沟道层包括位于第一子层上的第一子层和第二子层。 第一子层的氧含量低于第二子层的氧含量。 源极和漏极配置在第二子层的一部分上。 此外，还提供了上述TFT的制造方法。

公开(公告)号：USD1000922S1

公开(公告)日：2023-10-10

申请号：US29765386

申请日：2021-01-07

申请人： Chia-Yu Chen

设计人： Chia-Yu Chen

摘要： FIG. 1 is a top perspective view of a switch knob for ratchet wrench showing my new design;
FIG. 2 is a front elevational view thereof;
FIG. 3 is a rear elevational view thereof;
FIG. 4 is a left side elevational view thereof;
FIG. 5 is a right side elevational view thereof;
FIG. 6 is a top plan view thereof;
FIG. 7 is a bottom plan view thereof; and,
FIG. 8 is a bottom perspective view thereof.
The broken lines are for the purpose of illustrating environmental structure and form no part of the claimed design.

公开(公告)号：US09193050B2

公开(公告)日：2015-11-24

申请号：US13912288

申请日：2013-06-07

申请人： Chia-Yu Chen

发明人： Chia-Yu Chen

IPC分类号： B25B27/00 ,  B25B13/50

CPC分类号： B25B27/0042 ,  B25B13/505

摘要： An oil core replacing device includes a base pivotally provided thereon with a driving gear and three driven gears. The driven gears are annularly positioned around and meshed with the driving gear, respectively secured thereon with a clamping member with a rod body. A tubular body is annularly fitted around the outer circumferential side of each rod body, able to slide freely at the outer circumferential wall of the rod body. Thus, by having the tubular bodies sliding axially along the rod bodies and extending to the lower side of the rod bodies, the clamping members of the oil core replacing device can be adjusted in length for matching with different operation demands, convenient in operation.

摘要翻译： 油芯更换装置包括一个枢转地设置有驱动齿轮和三个从动齿轮的基座。 从动齿轮围绕环形定位并与驱动齿轮啮合，分别用具有杆体的夹紧构件固定在驱动齿轮上。 管状体围绕每个杆体的外周侧环形地配合，能够在杆体的外周壁处自由滑动。 因此，通过使管状体沿着杆体轴向滑动并延伸到杆体的下侧，油芯更换装置的夹紧构件可以在长度上进行调节，以适应不同的操作要求，操作方便。

公开(公告)号：US06862776B2

公开(公告)日：2005-03-08

申请号：US10420796

申请日：2003-04-23

申请人： Chia-Yu Chen

发明人： Chia-Yu Chen

IPC分类号： A47B95/02 ,  E05B1/00 ,  F16B7/14

CPC分类号： F16B7/1463 ,  Y10T16/451 ,  Y10T16/469 ,  Y10T16/473 ,  Y10T403/32501

摘要： The present invention disclose the positioning structure of a handle comprising a base possessing an axial hole and two hollow spaces mounts on the inner tube; two movable pieces with slanting cambered face provided screw teeth thereon mounts in each of the hollow spaces of the base; a rotating ring mounts on the outer tube; a rotating cone has an axial multilateral hole mounting in the hole of the base and between the two movable pieces, and cone face of the rotating cone provided screw teeth to bite the screw teeth of the movable pieces; and a rotating rod passing through the axial hole of the rotating cone, and one end of the rotating rod is fixed on the rotating ring, so that when rotating the rotating ring can control the retract of the handle.

摘要翻译： 本发明公开了一种手柄的定位结构，其包括在内管上具有轴向孔和两个中空空间的基座; 两个具有倾斜的弧形表面的活动件在其上设置有螺纹齿，安装在基座的每个中空空间中; 旋转环安装在外管上; 旋转锥体具有安装在基座的孔中和两个可动件之间的轴向多孔，并且旋转锥体的锥面提供螺纹齿以咬住可动件的螺纹齿; 以及通过旋转锥体的轴向孔的旋转杆，并且旋转杆的一端固定在旋转环上，使得当旋转环旋转时可以控制手柄的缩回。