摘要:
Gridded polysilicon semiconductor layouts implement double poly patterning to cut polylines of the layout into polyline segments. Devices are arranged on the polyline segments of a common polyline to reduce the area used to implement a circuit structure relative to conventional gridded polysilicon layout. Stacking of PMOS and NMOS devices is enabled by using double poly patterning to implement additional cuts which form additional polyline segments. Metal layer routing may connect nodes of separate polyline segments.
摘要:
An apparatus fabricated using a standard cell architecture including devices having different voltage thresholds may include a first set of polylines associated with a first channel length, where each polyline within the first set of polylines is separated by a substantially constant pitch. The apparatus may further include a second set of polylines associated with a second channel length and aligned with the first set of polylines, where each polyline within the second set of polylines is laterally separated by the substantially constant pitch. The apparatus may further include a first active region below the first set of polylines, and a second active region below the second set of polylines, where the first active region and the second active region are separated by a distance of less than 170 nm.
摘要:
An apparatus fabricated using a standard cell architecture including devices having different voltage thresholds may include a first set of polylines associated with a first channel length, where each polyline within the first set of polylines is separated by a substantially constant pitch. The apparatus may further include a second set of polylines associated with a second channel length and aligned with the first set of polylines, where each polyline within the second set of polylines is laterally separated by the substantially constant pitch. The apparatus may further include a first active region below the first set of polylines, and a second active region below the second set of polylines, where the first active region and the second active region are separated by a distance of less than 170 nm.
摘要:
A semiconductor die includes a group of spacer cells within the semiconductor die. The spacer cells include fiducial markings therein. The fiducial markings can be located within a metal layer, a diffusion layer, a polysilicon layer, and/or a Shallow Trench Isolation (STI) structure.
摘要:
A semiconductor die includes a group of spacer cells within the semiconductor die. The spacer cells include fiducial markings therein. The fiducial markings can be located within a metal layer, a diffusion layer, a polysilicon layer, and/or a Shallow Trench Isolation (STI) structure.
摘要:
Circuit elements are characterized for effects of proximity context on electrical characteristic. Based on the characterization, proximity context cell models, and corresponding modeled electrical characteristic values are obtained. Logic cells are characterized and modeled according to the proximity context cell models. Optionally the electrical characteristic can be time delay, leakage, dynamic power, or coupling noise among other parameters.
摘要:
Circuit elements are characterized for effects of proximity context on electrical characteristic. Based on the characterization, proximity context cell models, and corresponding modeled electrical characteristic values are obtained. Logic cells are characterized and modeled according to the proximity context cell models. Optionally the electrical characteristic can be time delay, leakage, dynamic power, or coupling noise among other parameters.
摘要:
Systems and method for defining a timing parameter for a circuit element based on process variation, including, determining a point of failure parameter associated with the timing parameter, the point of failure parameter correlated with a specific value of the process variation. A standard deviation associated with the point of failure parameter is determined. The process variation per the standard deviation is calculated and the timing parameter for the circuit element is defined as a function of the failure parameter, the standard deviation, and the process variation per the standard deviation. A margin factor, which varies with the standard deviation, is optionally applied to the timing parameter. The timing parameter may be one of a setup time or hold time.
摘要:
Systems and method for defining a timing parameter for a circuit element based on process variation, including, determining a point of failure parameter associated with the timing parameter, the point of failure parameter correlated with a specific value of the process variation. A standard deviation associated with the point of failure parameter is determined. The process variation per the standard deviation is calculated and the timing parameter for the circuit element is defined as a function of the failure parameter, the standard deviation, and the process variation per the standard deviation. A margin factor, which varies with the standard deviation, is optionally applied to the timing parameter. The timing parameter may be one of a setup time or hold time.
摘要:
A clock gating cell that comprises a latch in communication with an input enable logic and an output logic circuit, wherein the latch includes a pull-up and/or a pull-down circuit at an input node of the output logic circuit and circuitry preventing premature charge or discharge of the output logic circuit input node by the pull-up and/or the pull-down circuit when the clock gating cell is enabled.