Method of testing anti-high temperature performance of a magnetic head and apparatus thereof
    3.
    发明申请
    Method of testing anti-high temperature performance of a magnetic head and apparatus thereof 有权
    测试磁头抗高温性能的方法及其装置

    公开(公告)号:US20120274317A1

    公开(公告)日:2012-11-01

    申请号:US13064994

    申请日:2011-04-29

    IPC分类号: G01R33/12

    摘要: A method of testing anti-high temperature performance of a magnetic head comprises applying a second magnetic field with different intensities in a second direction and the changing first magnetic fields in a first direction, and measuring a plurality of second output parameter curves; and judging whether a variation that is beyond an allowable value is presented on the second output parameter curves, thereby screening out a defective magnetic head, therein the first direction is perpendicular to the air bearing surface of the magnetic head, and the second direction is perpendicular to the shielding layers of the magnetic head. The present invention can screen out defective magnetic heads that possess poor anti-high temperature performance without heating the magnetic head and with high precision.

    摘要翻译: 一种测试磁头的抗高温性能的方法包括:在第二方向施加不同强度的第二磁场,并在第一方向上改变第一磁场,并测量多个第二输出参数曲线; 并且判断在所述第二输出参数曲线上是否存在超出允许值的变化,从而筛选出所述第一方向上的有缺陷的磁头垂直于所述磁头的所述空气支承表面,并且所述第二方向垂直 到磁头的屏蔽层。 本发明可以在不加热磁头的情况下高精度地筛选出具有差的抗高温性能的有缺陷的磁头。

    Close loop method for measuring head SNR and media SNR
    8.
    发明申请
    Close loop method for measuring head SNR and media SNR 失效
    用于测量头部SNR和介质SNR的闭环方法

    公开(公告)号:US20120287529A1

    公开(公告)日:2012-11-15

    申请号:US13067163

    申请日:2011-05-12

    IPC分类号: G11B21/12

    CPC分类号: G11B5/607 G11B19/048

    摘要: A close loop method for measuring head SNR, for a storage device comprising a storage media and a head, comprising steps of: (a) loading the head on the media with a dynamic fly height; (b) measuring an initial environmental temperature value Ti and measuring the head signal signalload; (c) unloading the head; (d) adjusting a power which controls the dynamic fly height until a real-time environmental temperature value T2 is equal to the initial environmental temperature T1; (e) measuring the head noise value noiseunload, (f) calculating the head SNR with the follow equation: Head_SNR = 20 × log  ( signal load noise unload ) . The method of the present invention can obtain a fair condition between the signal and noise measurement, thereby a reliable and accurate head SNR can be obtain. The present invention also provides a close loop method for measuring media SNR.

    摘要翻译: 一种用于测量头部SNR的闭环方法,用于包括存储介质和头部的存储装置,包括以下步骤:(a)将所述头部以动态飞行高度装载在所述介质上; (b)测量初始环境温度值Ti并测量头信号信号负载; (c)卸下头部; (d)调整控制动态飞行高度的功率,直到实时环境温度值T2等于初始环境温度T1; (e)测量头噪声值噪声负载,(f)使用以下等式计算头信噪比:Head_SNR = 20×log(信号负载噪声卸载)。 本发明的方法可以在信号和噪声测量之间获得公平的条件,从而可以获得可靠和准确的头信号。 本发明还提供了一种用于测量介质SNR的闭环方法。

    Close loop method for measuring head SNR and media SNR
    9.
    发明授权
    Close loop method for measuring head SNR and media SNR 失效
    用于测量头部SNR和介质SNR的闭环方法

    公开(公告)号:US08634157B2

    公开(公告)日:2014-01-21

    申请号:US13067163

    申请日:2011-05-12

    IPC分类号: G11B21/12 G11B20/10

    CPC分类号: G11B5/607 G11B19/048

    摘要: A close loop method for measuring head SNR, for a storage device comprising a storage media and a head, comprising steps of: (a) loading the head on the media with a dynamic fly height; (b) measuring an initial environmental temperature value T1 and measuring the head signal signalload; (c) unloading the head; (d) adjusting a power which controls the dynamic fly height until a real-time environmental temperature value T2 is equal to the initial environmental temperature T1; (e) measuring the head noise value noiseunload, (f) calculating the head SNR with the follow equation: Head_SNR = 20 × log ⁡ ( signal load noise unload ) . The method of the present invention can obtain a fair condition between the signal and noise measurement, thereby a reliable and accurate head SNR can be obtain. The present invention also provides a close loop method for measuring media SNR.

    摘要翻译: 一种用于测量头部SNR的闭环方法,用于包括存储介质和头部的存储装置,包括以下步骤:(a)将所述头部以动态飞行高度装载在所述介质上; (b)测量初始环境温度值T1并测量头信号信号负载; (c)卸下头部; (d)调整控制动态飞行高度的功率,直到实时环境温度值T2等于初始环境温度T1; (e)测量头噪声值噪声负载,(f)通过以下等式计算头信噪比:Head_SNR = 20×log⁡(信号负载噪声卸载)。 本发明的方法可以在信号和噪声测量之间获得公平的条件,从而可以获得可靠和准确的头信号。 本发明还提供了一种用于测量介质SNR的闭环方法。

    Method for measuring the temperature rise induced by bias current/bias voltage in a magnetic tunnel junction
    10.
    发明授权
    Method for measuring the temperature rise induced by bias current/bias voltage in a magnetic tunnel junction 有权
    用于测量由磁性隧道结中的偏置电流/偏置电压引起的温升的方法

    公开(公告)号:US08594967B2

    公开(公告)日:2013-11-26

    申请号:US13064188

    申请日:2011-03-09

    IPC分类号: G01K7/00 G01K7/36

    摘要: A method for measuring a temperature rise induced by bias current/bias voltage in a magnetic tunnel junction includes: (a) applying an external time-changing magnetic field to the magnetic tunnel junction; (b) measuring different first outer pin flip field values under different temperature values; (c) correlating the temperature values with the outer pin flip field values; (d) measuring different second outer pin flip field values under different bias current/bias voltage values; (e) correlating the different bias current/bias voltage-values with the measured different second outer pin flip field values; and (f) correlating temperature values and bias current/bias voltage values according to the results produced by (c) and (e). The method can determine what kind of TMR reader design provides more stable and reliable reading performance, especially under higher operational temperatures.

    摘要翻译: 用于测量由磁性隧道结中的偏置电流/偏置电压引起的温度升高的方法包括:(a)将外部时变磁场施加到磁性隧道结; (b)在不同的温度值下测量不同的第一外部引脚翻转场值; (c)将温度值与外部引脚翻转场值相关联; (d)在不同的偏置电流/偏置电压值下测量不同的第二外部引脚翻转电压值; (e)将不同的偏置电流/偏置电压值与所测量的不同的第二外部引脚翻转值相关联; 和(f)根据(c)和(e)产生的结果使温度值和偏置电流/偏置电压值相关。 该方法可以确定什么样的TMR读取器设计提供更稳定可靠的读取性能,特别是在较高的工作温度下。