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    Method of testing anti-high temperature performance of a magnetic head and apparatus thereof
    6.
    发明申请
    Method of testing anti-high temperature performance of a magnetic head and apparatus thereof 有权
    测试磁头抗高温性能的方法及其装置

    公开(公告)号：US20120274317A1

    公开(公告)日：2012-11-01

    申请号：US13064994

    申请日：2011-04-29

    申请人： Chiuming Lueng ,  Cheukman Lui ,  Mankit Lee ,  Hokei Lam ,  Kwokkam Leung ,  Cheukwing Leung ,  Juren Ding ,  Rongkwang Ni

    发明人： Chiuming Lueng ,  Cheukman Lui ,  Mankit Lee ,  Hokei Lam ,  Kwokkam Leung ,  Cheukwing Leung ,  Juren Ding ,  Rongkwang Ni

    IPC分类号： G01R33/12

    CPC分类号： G01R33/1207 ,  B82Y25/00 ,  G01R33/12 ,  G11B5/455 ,  G11B5/4555 ,  G11B27/36

    摘要： A method of testing anti-high temperature performance of a magnetic head comprises applying a second magnetic field with different intensities in a second direction and the changing first magnetic fields in a first direction, and measuring a plurality of second output parameter curves; and judging whether a variation that is beyond an allowable value is presented on the second output parameter curves, thereby screening out a defective magnetic head, therein the first direction is perpendicular to the air bearing surface of the magnetic head, and the second direction is perpendicular to the shielding layers of the magnetic head. The present invention can screen out defective magnetic heads that possess poor anti-high temperature performance without heating the magnetic head and with high precision.

    摘要翻译： 一种测试磁头的抗高温性能的方法包括：在第二方向施加不同强度的第二磁场，并在第一方向上改变第一磁场，并测量多个第二输出参数曲线; 并且判断在所述第二输出参数曲线上是否存在超出允许值的变化，从而筛选出所述第一方向上的有缺陷的磁头垂直于所述磁头的所述空气支承表面，并且所述第二方向垂直 到磁头的屏蔽层。 本发明可以在不加热磁头的情况下高精度地筛选出具有差的抗高温性能的有缺陷的磁头。

    Method for measuring longitudinal bias magnetic field in a tunnel magnetoresistive sensor
    8.
    发明授权
    Method for measuring longitudinal bias magnetic field in a tunnel magnetoresistive sensor 有权
    用于测量隧道磁阻传感器中的纵向偏置磁场的方法

    公开(公告)号：US08664950B2

    公开(公告)日：2014-03-04

    申请号：US13067887

    申请日：2011-07-01

    申请人： Siuman Mok ,  Hokei Lam ,  Cheukwing Leung ,  Juren Ding ,  Rongkwang Ni ,  Wanyin Kwan ,  Cheukman Lui ,  Chiuming Lueng

    发明人： Siuman Mok ,  Hokei Lam ,  Cheukwing Leung ,  Juren Ding ,  Rongkwang Ni ,  Wanyin Kwan ,  Cheukman Lui ,  Chiuming Lueng

    IPC分类号： G01R33/12

    CPC分类号： G01R33/098

    摘要： A method for measuring longitudinal bias magnetic field in a tunnel magnetoresistive sensor of a magnetic head, the method includes the steps of: applying an external longitudinal time-changing magnetic field onto the tunnel magnetoresistive sensor; determining a shield saturation value of the tunnel magnetoresistive sensor under the application of the external longitudinal time-changing magnetic field; applying an external transverse time-changing magnetic field and an external longitudinal DC magnetic field onto the tunnel magnetoresistive sensor; determining a plurality of different output amplitudes under the application of the external transverse time-changing magnetic field and the application of different field strength values of the external longitudinal DC magnetic field; plotting a graph according to the different output amplitudes and the different field strength values; and determining the strength of the longitudinal bias magnetic field according to the graph and the shield saturation value.

    摘要翻译： 一种用于测量磁头的隧道磁阻传感器中的纵向偏置磁场的方法，所述方法包括以下步骤：将外部纵向时变磁场施加到隧道磁阻传感器上; 在外部纵向时变磁场的应用下，确定隧道磁阻传感器的屏蔽饱和度值; 将外部横向时变磁场和外部纵向直流磁场施加到隧道磁阻传感器上; 在外部横向时变磁场的应用和外部纵向直流磁场的不同场强值的应用中确定多个不同的输出幅度; 根据不同的输出幅度和不同的场强值绘制图形; 并根据曲线图和屏蔽饱和度值确定纵向偏置磁场的强度。

    Close loop method for measuring head SNR and media SNR
    9.
    发明授权
    Close loop method for measuring head SNR and media SNR 失效
    用于测量头部SNR和介质SNR的闭环方法

    公开(公告)号：US08634157B2

    公开(公告)日：2014-01-21

    申请号：US13067163

    申请日：2011-05-12

    申请人： Chiuming Lueng ,  Mankit Lee ,  Wanyin Kwan ,  Cheukwing Leung ,  Juren Ding ,  Rongkwang Ni

    发明人： Chiuming Lueng ,  Mankit Lee ,  Wanyin Kwan ,  Cheukwing Leung ,  Juren Ding ,  Rongkwang Ni

    IPC分类号： G11B21/12 ,  G11B20/10

    CPC分类号： G11B5/607 ,  G11B19/048

    摘要： A close loop method for measuring head SNR, for a storage device comprising a storage media and a head, comprising steps of: (a) loading the head on the media with a dynamic fly height; (b) measuring an initial environmental temperature value T1 and measuring the head signal signalload; (c) unloading the head; (d) adjusting a power which controls the dynamic fly height until a real-time environmental temperature value T2 is equal to the initial environmental temperature T1; (e) measuring the head noise value noiseunload, (f) calculating the head SNR with the follow equation: Head_SNR = 20 × log ⁡ ( signal load noise unload ) . The method of the present invention can obtain a fair condition between the signal and noise measurement, thereby a reliable and accurate head SNR can be obtain. The present invention also provides a close loop method for measuring media SNR.

    摘要翻译： 一种用于测量头部SNR的闭环方法，用于包括存储介质和头部的存储装置，包括以下步骤：（a）将所述头部以动态飞行高度装载在所述介质上; （b）测量初始环境温度值T1并测量头信号信号负载; （c）卸下头部; （d）调整控制动态飞行高度的功率，直到实时环境温度值T2等于初始环境温度T1; （e）测量头噪声值噪声负载，（f）通过以下等式计算头信噪比：Head_SNR = 20×log⁡（信号负载噪声卸载）。 本发明的方法可以在信号和噪声测量之间获得公平的条件，从而可以获得可靠和准确的头信号。 本发明还提供了一种用于测量介质SNR的闭环方法。

    Method for measuring the temperature rise induced by bias current/bias voltage in a magnetic tunnel junction
    10.
    发明授权
    Method for measuring the temperature rise induced by bias current/bias voltage in a magnetic tunnel junction 有权
    用于测量由磁性隧道结中的偏置电流/偏置电压引起的温升的方法

    公开(公告)号：US08594967B2

    公开(公告)日：2013-11-26

    申请号：US13064188

    申请日：2011-03-09

    申请人： Mankit Lee ,  Chiuming Lueng ,  Cheukwing Leung ,  Juren Ding ,  Rongkwang Ni

    发明人： Mankit Lee ,  Chiuming Lueng ,  Cheukwing Leung ,  Juren Ding ,  Rongkwang Ni

    IPC分类号： G01K7/00 ,  G01K7/36

    CPC分类号： G01K13/10 ,  B82Y25/00 ,  G01K7/36 ,  G01K15/005 ,  G01K2217/00 ,  G01R33/007 ,  G01R33/098 ,  H01F10/3254

    摘要： A method for measuring a temperature rise induced by bias current/bias voltage in a magnetic tunnel junction includes: (a) applying an external time-changing magnetic field to the magnetic tunnel junction; (b) measuring different first outer pin flip field values under different temperature values; (c) correlating the temperature values with the outer pin flip field values; (d) measuring different second outer pin flip field values under different bias current/bias voltage values; (e) correlating the different bias current/bias voltage-values with the measured different second outer pin flip field values; and (f) correlating temperature values and bias current/bias voltage values according to the results produced by (c) and (e). The method can determine what kind of TMR reader design provides more stable and reliable reading performance, especially under higher operational temperatures.

    摘要翻译： 用于测量由磁性隧道结中的偏置电流/偏置电压引起的温度升高的方法包括：（a）将外部时变磁场施加到磁性隧道结; （b）在不同的温度值下测量不同的第一外部引脚翻转场值; （c）将温度值与外部引脚翻转场值相关联; （d）在不同的偏置电流/偏置电压值下测量不同的第二外部引脚翻转电压值; （e）将不同的偏置电流/偏置电压值与所测量的不同的第二外部引脚翻转值相关联; 和（f）根据（c）和（e）产生的结果使温度值和偏置电流/偏置电压值相关。 该方法可以确定什么样的TMR读取器设计提供更稳定可靠的读取性能，特别是在较高的工作温度下。