公开(公告)号：US20070155180A1

公开(公告)日：2007-07-05

申请号：US11325323

申请日：2006-01-05

申请人： Chia-Che Hsu ,  Yea-Chung Shih ,  Mien-Jen Cheng ,  Cheng-Chang Wu ,  Jui-Chung Chang

发明人： Chia-Che Hsu ,  Yea-Chung Shih ,  Mien-Jen Cheng ,  Cheng-Chang Wu ,  Jui-Chung Chang

IPC分类号： H01L21/311

CPC分类号： H01L21/32139 ,  H01L21/32134 ,  H01L29/4908

摘要： A thin film etching method is provided, which is used for manufacturing semiconductor device or thin film transistor (TFT) array and through which no undercut may be presented or a good after-etching shape may be achieved with respect to a thin film thus etched. The thin film etching method is performed in a two-stage manner by an etchant and between the two stages a photoresist removing process is inserted where another etchant is used. With execution of the photoresist removing process, the thin film may have an increased contact area with the etchant. As such, any undercut or undesired after-etching shape existed in the thin film etched by the prior art may be eliminated or improved.

摘要翻译： 提供了一种薄膜蚀刻方法，其用于制造半导体器件或薄膜晶体管（TFT）阵列，并且通过该薄膜蚀刻方法可能不会产生底切，或者相对于如此蚀刻的薄膜可以实现良好的蚀刻后形状。 通过蚀刻剂以两级方式进行薄膜蚀刻方法，并且在两个阶段之间插入使用另一蚀刻剂的光致抗蚀剂去除工艺。 通过执行光致抗蚀剂去除工艺，薄膜可以具有与蚀刻剂的增加的接触面积。 因此，可以消除或改进由现有技术蚀刻的薄膜中存在的任何底切或不期望的后蚀刻形状。