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1.发明授权公开(公告)号：US08765582B2
公开(公告)日：2014-07-01
申请号：US13602618
申请日：2012-09-04
申请人： Chia-Hao Hsu , Chia-Chen Chen , Tzung-Chi Fu , Tzu-Wei Kao , Yu Chao Lin
发明人： Chia-Hao Hsu , Chia-Chen Chen , Tzung-Chi Fu , Tzu-Wei Kao , Yu Chao Lin
IPC分类号： H01L21/02 , H01L21/3215
CPC分类号： H01L23/562 , G03F7/70708 , H01L21/26506 , H01L21/32155 , H01L21/6831 , H01L29/0603 , H01L29/34 , H01L2924/0002 , H01L2924/00
摘要： The present disclosure provides one embodiment of a semiconductor structure. The semiconductor structure includes a semiconductor substrate having a front surface and a backside surface; integrated circuit features formed on the front surface of the semiconductor substrate; and a polycrystalline silicon layer disposed on the backside surface of the semiconductor substrate.
摘要翻译： 本公开提供了半导体结构的一个实施例。 半导体结构包括具有前表面和后表面的半导体衬底; 集成电路特征形成在半导体衬底的前表面上; 以及设置在半导体衬底的背面上的多晶硅层。
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2.发明申请METHOD FOR EXTREME ULTRAVIOLET ELECTROSTATIC CHUCK WITH REDUCED CLAMPING EFFECT 有权具有减少钳位效应的极端超紫外线静电卡车的方法公开(公告)号：US20140061655A1
公开(公告)日：2014-03-06
申请号：US13602618
申请日：2012-09-04
申请人： Chia-Hao Hsu , Chia-Chen Chen , Tzung-Chi Fu , Tzu-Wei Kao , Yu Chao Lin
发明人： Chia-Hao Hsu , Chia-Chen Chen , Tzung-Chi Fu , Tzu-Wei Kao , Yu Chao Lin
CPC分类号： H01L23/562 , G03F7/70708 , H01L21/26506 , H01L21/32155 , H01L21/6831 , H01L29/0603 , H01L29/34 , H01L2924/0002 , H01L2924/00
摘要： The present disclosure provides one embodiment of a semiconductor structure. The semiconductor structure includes a semiconductor substrate having a front surface and a backside surface; integrated circuit features formed on the front surface of the semiconductor substrate; and a polycrystalline silicon layer disposed on the backside surface of the semiconductor substrate.
摘要翻译： 本公开提供了半导体结构的一个实施例。 半导体结构包括具有前表面和后表面的半导体衬底; 集成电路特征形成在半导体衬底的前表面上; 以及设置在半导体衬底的背面上的多晶硅层。
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