摘要:
A dynamic random access memory including a substrate, an isolation structure, two transistors, two trench capacitors and two passing gates is provided. The isolation structure, including a first isolation structure and a second isolation structure, is disposed in the substrate. The second isolation structure is disposed in the substrate above the first isolation structure and the bottom surface of the second isolation structure is lower than the top surface of the substrate. The periphery of the second isolation structure is beyond that of the first isolation structure. The transistors are disposed on the substrate respectively at two sides of the isolation structure. The trench capacitors are respectively disposed between the transistors and the isolation structures. A portion of the second isolation structure is disposed in the trench capacitor. The passing gates are completely disposed on the second isolation structure.
摘要:
A substrate is provided having an oxide layer, a first nitride-silicon, a STI, and a second nitride-silicon. A pattern poly-silicon layer on the second nitride-silicon layer is etched to form a deep trench opening. Etching the pattern poly-silicon layer also deepens the deep trench opening. Then, a conductive layer is filled in the deep trench opening.
摘要:
A substrate is provided having an oxide layer, a first nitride-silicon, a STI, and a second nitride-silicon. A pattern poly-silicon layer on the second nitride-silicon layer is etched to form a deep trench opening. Etching the pattern poly-silicon layer also deepens the deep trench opening. Then, a conductive layer is filled in the deep trench opening.
摘要:
A substrate is provided having an oxide layer, a first nitride-silicon, a STI, and a second nitride-silicon. A pattern poly-silicon layer on the second nitride-silicon layer is etched to form a deep trench opening. Etching the pattern poly-silicon layer also deepens the deep trench opening. Then, a conductive layer is filled in the deep trench opening.
摘要:
A substrate is provided having an oxide layer, a first nitride-silicon, a STI, and a second nitride-silicon. A pattern poly-silicon layer on the second nitride-silicon layer is etched to form a deep trench opening. Etching the pattern poly-silicon layer also deepens the deep trench opening. Then, a conductive layer is filled in the deep trench opening.
摘要:
A touch sensing apparatus is disclosed. The touch sensing apparatus includes a logic control module, at least one storage control module, and at least one decoding control module. The logic control module is used to generate a plurality of control signals having different control timings. The plurality of control signals includes a storage control signal and a decoding control signal. Each storage control module includes a plurality of storage capacitors, and respectively stores each of sensed voltages in different storage capacitors at different times according to a storage control timing of the storage control signal. The sensed voltages are analog data sensed from scan lines of an ITO sensor. The decoding control module performs analog adding process to the sensed voltages stored in the storage capacitors according to a decoding control timing of the decoding control signal to output decoded analog data with high signal-to-noise ratio (SNR).
摘要:
A touch sensing apparatus is disclosed. The touch sensing apparatus includes a logic control module, at least one storage control module, and at least one decoding control module. The logic control module is used to generate a plurality of control signals having different control timings. The plurality of control signals includes a storage control signal and a decoding control signal. Each storage control module includes a plurality of storage capacitors, and respectively stores each of sensed voltages in different storage capacitors at different times according to a storage control timing of the storage control signal. The sensed voltages are analog data sensed from scan lines of an ITO sensor. The decoding control module is used to decode the sensed voltages stored in the storage capacitors according to a decoding control timing of the decoding control signal to output the decoded analog data.
摘要:
A hand tool with an illuminating device includes a handle having a receiving space defined therein. A holding seat is received in the receiving space. The holding seat has a battery chamber defined therein, a shank chamber defined therein, and a plurality of bit holders formed thereon. A tool set is received in the holding seat. The tool set includes a plurality of tool bits detachably held in the bit holders and a tool shank detachably received in the shank chamber. The tool shank has a coupling portion extending therefrom and a connecting portion formed thereon for detachably connecting to any one of the tool bits. An illuminating device is received in the receiving space and electrically connected to the holding seat. The illuminating device has a coupling slot defined axially therein for engaging with the coupling portion of the tool shank.
摘要:
A gate driver applied to a LCD apparatus is disclosed. The gate driver includes a pulse modulation controlling module. When a pulse modulation controlling signal received by the pulse modulation controlling module is changed from a high level to a low level, the pulse modulation controlling module closes an active switch according to the pulse modulation controlling signal, so that a high level power signal will begin discharging to have a modulated pulse form.
摘要:
An ESD protection device includes a substrate of a first conductivity type, a well region of a second conductivity type, a first doped region of the second conductivity type, a second doped region of the first conductivity type, a third doped region of the second conductivity type, a fourth doped region of the first conductivity type. The well region is configured in the substrate. The first doped region is configured in the well region. The second doped region is configured in the well region and surrounding the first doped region. The third doped region is configured in the well region and surrounding the first doped region and the second doped region. The fourth doped region is configured in the well region and under the first doped region and the second doped region. The fourth doped region is coupled with the first doped region and with the second doped region, respectively.