公开(公告)号：US20120270474A1

公开(公告)日：2012-10-25

申请号：US13090284

申请日：2011-04-20

申请人： Chien-Mao Liao ,  Yi-Nan Chen ,  Hsien-Wen Liu

发明人： Chien-Mao Liao ,  Yi-Nan Chen ,  Hsien-Wen Liu

IPC分类号： B24B49/00

CPC分类号： B24B37/34 ,  B24B49/00

摘要： A polishing pad wear detecting apparatus suitable for a chemical mechanical polishing (CMP) apparatus is provided. The polishing pad wear detecting apparatus includes an arm and a height detector. One end of the arm is fastened on the CMP apparatus. The height detector is disposed on the arm for detecting height variation of a polishing pad.

摘要翻译： 提供了适用于化学机械抛光（CMP）装置的抛光垫磨损检测装置。 抛光垫磨损检测装置包括臂和高度检测器。 臂的一端固定在CMP装置上。 高度检测器设置在臂上用于检测抛光垫的高度变化。

公开(公告)号：US20120149197A1

公开(公告)日：2012-06-14

申请号：US12962666

申请日：2010-12-08

申请人： Chien-Mao Liao ,  Yi-Nan Chen

发明人： Chien-Mao Liao ,  Yi-Nan Chen

IPC分类号： H01L21/306

CPC分类号： H01L21/321 ,  H01L21/3105 ,  H01L21/76819 ,  H01L21/7684

摘要： A manufacturing method of a device is provided. In the manufacturing method, a substrate is provided. The substrate has a plurality of patterns and a plurality of openings formed thereon, and the openings are located among the patterns. A first liquid supporting layer is formed on the patterns, and the openings are filled with the first liquid supporting layer. The first liquid supporting layer is transformed into a first solid supporting layer. The first solid supporting layer includes a plurality of supporting elements formed in the openings, and the supporting elements are formed among the patterns. A treatment process is performed on the patterns. The first solid supporting layer that includes the supporting elements is transformed into a second liquid supporting layer. The second liquid supporting layer is removed.

摘要翻译： 提供了一种装置的制造方法。 在制造方法中，设置有基板。 基板具有多个图案和形成在其上的多个开口，并且开口位于图案之间。 在图案上形成第一液体支撑层，并且用第一液体支撑层填充开口。 将第一液体支撑层转变成第一固体支撑层。 第一固体支持层包括形成在开口中的多个支撑元件，并且支撑元件形成在图案之中。 对图案进行处理。 包括支撑元件的第一固体支持层被转化成第二液体支撑层。 第二液体支撑层被去除。

公开(公告)号：US08309467B2

公开(公告)日：2012-11-13

申请号：US12962666

申请日：2010-12-08

申请人： Chien-Mao Liao ,  Yi-Nan Chen

发明人： Chien-Mao Liao ,  Yi-Nan Chen

IPC分类号： H01L21/306 ,  B44C1/22

CPC分类号： H01L21/321 ,  H01L21/3105 ,  H01L21/76819 ,  H01L21/7684

摘要： A manufacturing method of a device is provided. In the manufacturing method, a substrate is provided. The substrate has a plurality of patterns and a plurality of openings formed thereon, and the openings are located among the patterns. A first liquid supporting layer is formed on the patterns, and the openings are filled with the first liquid supporting layer. The first liquid supporting layer is transformed into a first solid supporting layer. The first solid supporting layer includes a plurality of supporting elements formed in the openings, and the supporting elements are formed among the patterns. A treatment process is performed on the patterns. The first solid supporting layer that includes the supporting elements is transformed into a second liquid supporting layer. The second liquid supporting layer is removed.

摘要翻译： 提供了一种装置的制造方法。 在制造方法中，设置有基板。 基板具有多个图案和形成在其上的多个开口，并且开口位于图案之间。 在图案上形成第一液体支撑层，并且用第一液体支撑层填充开口。 将第一液体支撑层转变成第一固体支撑层。 第一固体支持层包括形成在开口中的多个支撑元件，并且支撑元件形成在图案之中。 对图案进行处理。 包括支撑元件的第一固体支持层被转化成第二液体支撑层。 第二液体支撑层被去除。

公开(公告)号：US20120264359A1

公开(公告)日：2012-10-18

申请号：US13085489

申请日：2011-04-13

申请人： Chien-Mao Liao ,  Yi-Nan Chen ,  Hsien-Wen Liu

发明人： Chien-Mao Liao ,  Yi-Nan Chen ,  Hsien-Wen Liu

IPC分类号： B24B7/22

CPC分类号： B24B37/30

摘要： A membrane is suitable to be mounted on a polishing head of a chemical mechanical polishing apparatus and includes a main portion and an edge portion. The edge portion is located at an edge of the main portion, wherein a first included angle between the main portion and the edge portion is an obtuse angle.

摘要翻译： 膜适于安装在化学机械抛光装置的抛光头上，并且包括主要部分和边缘部分。 边缘部分位于主要部分的边缘处，其中主要部分和边缘部分之间的第一夹角是钝角。

公开(公告)号：US08545289B2

公开(公告)日：2013-10-01

申请号：US13086367

申请日：2011-04-13

申请人： Chien-Mao Liao ,  Yi-Nan Chen ,  Hsien-Wen Liu

发明人： Chien-Mao Liao ,  Yi-Nan Chen ,  Hsien-Wen Liu

IPC分类号： B24B49/00

CPC分类号： H01L21/67259 ,  B24B37/005 ,  B24B37/30 ,  B24B49/08 ,  B24B49/10 ,  B24B49/12 ,  H01L21/68735

摘要： A distance monitoring device is provided. The device is suitable for a chemical mechanical polishing (CMP) apparatus. A polishing head of the CMP apparatus includes a frame and a membrane. The membrane is mounted on the frame, and a plurality of air bags is formed by the membrane and the frame in the polishing head. The distance monitoring device includes a plurality of distance detectors disposed on the frame corresponding to the air bags respectively to set a location of each of the distance detectors on the frame as a reference point, wherein each of the distance detectors is configured to measure a distance between each of the reference points and the membrane.

摘要翻译： 提供了一种距离监测装置。 该设备适用于化学机械抛光（CMP）设备。 CMP设备的抛光头包括框架和膜。 膜安装在框架上，并且多个气囊由抛光头中的膜和框架形成。 距离监视装置包括多个距离检测器，其分别布置在与气囊对应的框架上，以将每个距离检测器的位置设置在框架上作为参考点，其中每个距离检测器被配置成测量距离 在每个参考点和膜之间。

公开(公告)号：US20120264354A1

公开(公告)日：2012-10-18

申请号：US13086367

申请日：2011-04-13

申请人： Chien-Mao Liao ,  Yi-Nan Chen ,  Hsien-Wen Liu

发明人： Chien-Mao Liao ,  Yi-Nan Chen ,  Hsien-Wen Liu

IPC分类号： B24B49/12 ,  B24B49/08

CPC分类号： H01L21/67259 ,  B24B37/005 ,  B24B37/30 ,  B24B49/08 ,  B24B49/10 ,  B24B49/12 ,  H01L21/68735

摘要： A distance monitoring device is provided. The device is suitable for a chemical mechanical polishing (CMP) apparatus. A polishing head of the CMP apparatus includes a frame and a membrane. The membrane is mounted on the frame, and a plurality of air bags is formed by the membrane and the frame in the polishing head. The distance monitoring device includes a plurality of distance detectors disposed on the frame corresponding to the air bags respectively to set a location of each of the distance detectors on the frame as a reference point, wherein each of the distance detectors is configured to measure a distance between each of the reference points and the membrane.

摘要翻译： 提供了一种距离监测装置。 该设备适用于化学机械抛光（CMP）设备。 CMP设备的抛光头包括框架和膜。 膜安装在框架上，并且多个气囊由抛光头中的膜和框架形成。 距离监视装置包括多个距离检测器，其分别布置在与气囊对应的框架上，以将每个距离检测器的位置设置在框架上作为参考点，其中每个距离检测器被配置成测量距离 在每个参考点和膜之间。

公开(公告)号：US20120264300A1

公开(公告)日：2012-10-18

申请号：US13086366

申请日：2011-04-13

申请人： Chien-Mao Liao ,  Yi-Nan Chen ,  Hsien-Wen Liu

发明人： Chien-Mao Liao ,  Yi-Nan Chen ,  Hsien-Wen Liu

IPC分类号： H01L21/306

CPC分类号： H01L21/3212 ,  H01L21/7684 ,  H01L21/76898

摘要： A method of fabricating the semiconductor component including following steps is provided. A substrate is provided, wherein an opening is already formed in the substrate. A material layer is formed on the substrate, wherein the material layer fills up the opening, and the material layer outside and above the opening has a recess therein. A sacrifice layer is formed on a surface of the recess. A chemical mechanical polishing (CMP) process is performed to remove the sacrifice layer and the material layer outside the opening, wherein a polishing rate of the CMP process on the material layer is greater than that of the CMP process on the sacrifice layer.

摘要翻译： 提供一种制造半导体元件的方法，包括以下步骤。 提供了一种基板，其中已经在基板中形成了开口。 在基板上形成材料层，其中材料层填充开口，并且开口外部和上方的材料层在其中具有凹部。 牺牲层形成在凹部的表面上。 进行化学机械抛光（CMP）工艺以去除开口外部的牺牲层和材料层，其中在牺牲层上CMP材料层上的CMP工艺的抛光速率大于抛光速率。

公开(公告)号：US20120264299A1

公开(公告)日：2012-10-18

申请号：US13085487

申请日：2011-04-13

申请人： Chien-Mao Liao ,  Yi-Nan Chen ,  Hsien-Wen Liu

发明人： Chien-Mao Liao ,  Yi-Nan Chen ,  Hsien-Wen Liu

IPC分类号： H01L21/306

CPC分类号： H01L21/3212 ,  H01L21/31053

摘要： A chemical mechanical polishing (CMP) method is provided The method is capable of polishing a substrate in a CMP apparatus by using a hydrophobic polishing pad and includes following steps. A first CMP process is performed to the substrate. A first cleaning process is performed to the hydrophobic polishing pad. A second CMP process is performed to the substrate, wherein the first CMP process, the first cleaning process and the second CMP process are performed in sequence.

摘要翻译： 提供了化学机械抛光（CMP）方法。该方法能够通过使用疏水性抛光垫在CMP设备中抛光衬底，并且包括以下步骤。 对基板进行第一CMP处理。 对疏水性抛光垫进行第一清洗处理。 对基板执行第二CMP处理，其中依次执行第一CMP处理，第一清洗处理和第二CMP处理。

公开(公告)号：US08963282B2

公开(公告)日：2015-02-24

申请号：US13231961

申请日：2011-09-14

申请人： Tse-Yao Huang ,  Yi-Nan Chen ,  Hsien-Wen Liu

发明人： Tse-Yao Huang ,  Yi-Nan Chen ,  Hsien-Wen Liu

IPC分类号： H01L29/72 ,  H01L23/31 ,  H01L23/00 ,  H01L21/78 ,  H01L21/56

CPC分类号： H01L23/562 ,  H01L21/311 ,  H01L21/561 ,  H01L21/76224 ,  H01L21/78 ,  H01L23/3178 ,  H01L2924/0002 ,  H01L2924/00

摘要： A semiconductor structure includes a matrix, an integrated circuit and a scribe line. The matrix includes a scribe line region and a circuit region. The integrated circuit is disposed within the circuit region. The scribe line is disposed within the scribe line region and includes a crack stop trench which is disposed in the matrix and adjacent to the circuit region. The crack stop trench is parallel with one side of the circuit region and filled with a composite material in a form of a grid to form a crack stop structure.

摘要翻译： 半导体结构包括矩阵，集成电路和划线。 矩阵包括划线区域和电路区域。 集成电路设置在电路区域内。 划痕线设置在划线区域内并且包括设置在矩阵中并且邻近电路区域的裂缝停止沟槽。 裂缝停止沟槽与电路区域的一侧平行，并填充有格栅形式的复合材料以形成裂纹停止结构。

公开(公告)号：US08692245B2

公开(公告)日：2014-04-08

申请号：US13214227

申请日：2011-08-21

申请人： Tse-Yao Huang ,  Yi-Nan Chen ,  Hsien-Wen Liu

发明人： Tse-Yao Huang ,  Yi-Nan Chen ,  Hsien-Wen Liu

IPC分类号： H01L23/544 ,  H01L23/482 ,  H01L21/762

CPC分类号： H01L21/76224 ,  H01L23/562 ,  H01L23/585 ,  H01L2924/0002 ,  H01L2924/00

摘要： The present invention in a first aspect proposes a semiconductor structure with a crack stop structure. The semiconductor structure includes a matrix, an integrated circuit and a scribe line. The matrix includes a scribe line region and a circuit region. The integrated circuit is disposed within the circuit region. The scribe line is disposed within the scribe line region and includes a crack stop trench which is disposed in the matrix and adjacent to the circuit region. The crack stop trench is parallel with one side of the circuit region and filled with a composite material in the form of a grid to form a crack stop structure.

摘要翻译： 本发明在第一方面提出了一种具有裂纹停止结构的半导体结构。 半导体结构包括矩阵，集成电路和划线。 矩阵包括划线区域和电路区域。 集成电路设置在电路区域内。 划痕线设置在划线区域内并且包括设置在矩阵中并且邻近电路区域的裂缝停止沟槽。 裂缝停止沟槽与电路区域的一侧平行，并填充有格栅形式的复合材料以形成裂纹停止结构。