SEMICONDUCTOR MASK BLANKS WITH A COMPATIBLE STOP LAYER
    1.
    发明申请
    SEMICONDUCTOR MASK BLANKS WITH A COMPATIBLE STOP LAYER 有权
    SEMICONDUCTOR MASK BLANKS与相容的停止层

    公开(公告)号:US20130193565A1

    公开(公告)日:2013-08-01

    申请号:US13362818

    申请日:2012-01-31

    摘要: Provided is a method for creating a mask blank that include a stop layer. The stop layer is optically compatible and process compatible with other layers included as part of the mask blanks. Such blanks may include EUV, phase-shifting, or OMOG masks. The stop layer includes molybdenum, silicon, and nitride in a proportion that allows for compatibility and aids in detection by a residual gas analyzer. Provided is also a method for the patterning of mask blanks with a stop layer, particularly the method for removing semi-transparent residue defects that may occur due to problems in prior mask creation steps. The method involves the detect of included materials with a residual gas analyzer. Provided is also a mask blank structure which incorporates the compatible stop layer.

    摘要翻译: 提供了一种用于创建包括停止层的掩模坯料的方法。 停止层是光学兼容的,并且与作为掩模坯料的一部分包括的其它层的工艺兼容。 这样的空白可以包括EUV,相移或OMOG掩模。 停止层包括钼,硅和氮化物,其比例允许相容性,并有助于残留气体分析仪的检测。 还提供了具有停止层的掩模坯料图案化的方法,特别是用于去除由于先前的掩模制造步骤中的问题而可能发生的半透明残留缺陷的方法。 该方法包括用残留气体分析仪检测包含的材料。 还提供了一种掩模空白结构,其结合了相容的停止层。

    Semiconductor mask blanks with a compatible stop layer
    2.
    发明授权
    Semiconductor mask blanks with a compatible stop layer 有权
    具有兼容停止层的半导体掩模板

    公开(公告)号:US08715890B2

    公开(公告)日:2014-05-06

    申请号:US13362818

    申请日:2012-01-31

    IPC分类号: G03F1/00

    摘要: Provided is a method for creating a mask blank that include a stop layer. The stop layer is optically compatible and process compatible with other layers included as part of the mask blanks. Such blanks may include EUV, phase-shifting, or OMOG masks. The stop layer includes molybdenum, silicon, and nitride in a proportion that allows for compatibility and aids in detection by a residual gas analyzer. Provided is also a method for the patterning of mask blanks with a stop layer, particularly the method for removing semi-transparent residue defects that may occur due to problems in prior mask creation steps. The method involves the detect of included materials with a residual gas analyzer. Provided is also a mask blank structure which incorporates the compatible stop layer.

    摘要翻译: 提供了一种用于创建包括停止层的掩模坯料的方法。 停止层是光学兼容的,并且与作为掩模坯料的一部分包括的其它层的工艺兼容。 这样的空白可以包括EUV,相移或OMOG掩模。 停止层包括钼,硅和氮化物,其比例允许相容性,并有助于残留气体分析仪的检测。 还提供了具有停止层的掩模坯料图案化的方法,特别是用于去除由于先前的掩模制造步骤中的问题而可能发生的半透明残留缺陷的方法。 该方法包括用残留气体分析仪检测包含的材料。 还提供了一种掩模空白结构,其结合了相容的停止层。

    Method and pellicle mounting apparatus for reducing pellicle induced distortion
    3.
    发明授权
    Method and pellicle mounting apparatus for reducing pellicle induced distortion 有权
    用于减少防护薄膜引起的畸变的方法和防护薄膜安装装置

    公开(公告)号:US08792078B2

    公开(公告)日:2014-07-29

    申请号:US12767152

    申请日:2010-04-26

    IPC分类号: G03B27/42

    摘要: An apparatus for mounting a pellicle onto a mask is provided. In one embodiment, the apparatus comprises a base provided with a track; a dummy plate holder coupled to the base, the dummy plate holder for receiving a dummy plate having an elevated portion on one side thereof; a mask holder for receiving a mask, the mask holder slidably coupled to the base; a pellicle holder for receiving a pellicle frame, the pellicle holder slidably coupled to the base; and drive means being adapted to drive the pellicle holder along the track towards the dummy plate holder, wherein during operation when the pellicle frame is mounted onto the mask causing the mask to contact the dummy plate, the mounting pressure in the mask is distributed by way of the elevated portion in the dummy plate, thus reducing distortion in the mask.

    摘要翻译: 提供了一种将防护薄膜组件安装在掩模上的装置。 在一个实施例中,该装置包括设置有轨道的基座; 耦合到基座的虚拟板保持器,用于接收在其一侧具有升高部分的虚拟板的虚拟板保持器; 用于接收掩模的掩模保持器,所述掩模保持器可滑动地联接到所述基部; 用于接收防护薄膜组件框架的防护薄膜组件保持器,所述防护薄膜组件保持器可滑动地联接到所述基座; 驱动装置适于将防护薄膜组件保持器沿着轨道朝向虚拟板夹持器驱动,其中在操作期间当防护薄膜组件框架安装在掩模上使得掩模与虚拟板接触时,掩模中的安装压力被分配 的虚拟板中的升高部分,从而减少掩模中的变形。

    PHASE-SHIFTING MASK AND METHOD OF FABRICATING SAME
    4.
    发明申请
    PHASE-SHIFTING MASK AND METHOD OF FABRICATING SAME 审中-公开
    相移掩模及其制造方法

    公开(公告)号:US20080254376A1

    公开(公告)日:2008-10-16

    申请号:US11734163

    申请日:2007-04-11

    IPC分类号: G03F1/00

    CPC分类号: G03F1/32 G03F1/34

    摘要: A phase-shifting mask is fabricated using two separate exposure processes. The mask includes a substrate and a device pattern area above the substrate. The mask has a mask pattern defining boundaries of the device pattern area and an administrative pattern area defining boundaries of the mask pattern.

    摘要翻译: 使用两个单独的曝光工艺制造相移掩模。 掩模包括衬底和衬底上方的器件图案区域。 掩模具有定义设备图案区域的边界的掩模图案和定义掩模图案的边界的管理图案区域。