公开(公告)号：US20070045102A1

公开(公告)日：2007-03-01

申请号：US11209907

申请日：2005-08-23

申请人： Chih-Ling Lee ,  Adrian Devasahayam ,  Ming Mao ,  Chih-Ching Hu ,  Vincent Ip ,  Piero Sferlazzo

发明人： Chih-Ling Lee ,  Adrian Devasahayam ,  Ming Mao ,  Chih-Ching Hu ,  Vincent Ip ,  Piero Sferlazzo

IPC分类号： C23C14/00

CPC分类号： C23C14/352 ,  C23C14/165

摘要： An improved planetary sputter deposition method for sputter depositing an alloy on a substrate wherein the sputter deposited amount, or thickness, of a specific material of the alloy can be controlled so that different substrates can be provided with an alloy having a different composition, i.e. having different percentages of the same materials, thus, reducing the costs of stockpiling multiple alloy targets. The method generally includes providing a substrate and a plurality of targets with each of the plurality of targets being composed of one or more magnetic materials. The targets are sputtered, in sequence, to deposit each of the materials of the plurality of targets on the substrate to provide at least one laminate defining an alloy.

摘要翻译： 一种用于在基板上溅射沉积合金的改进的行星溅射沉积方法，其中可以控制合金的特定材料的溅射沉积量或厚度，使得可以提供具有不同组成的合金，即具有 不同百分比的相同材料，从而降低储存多种合金靶材的成本。 该方法通常包括提供基底和多个靶，其中多个靶中的每一个由一个或多个磁性材料构成。 按顺序溅射靶，以将多个靶材的每种材料沉积在基底上，以提供限定合金的至少一个层压板。

公开(公告)号：US20070209926A1

公开(公告)日：2007-09-13

申请号：US11558769

申请日：2006-11-10

申请人： Chih-Ling Lee ,  Adrian Devasahayam ,  Ming Mao

发明人： Chih-Ling Lee ,  Adrian Devasahayam ,  Ming Mao

IPC分类号： C23C14/32 ,  C23C14/00

CPC分类号： C23C14/352 ,  C23C14/505 ,  C23C14/568 ,  C23C14/5833

摘要： The present invention relates a physical vapor deposition (PVD) system. e.g. a planetary system, for forming one or more layers of a coating material on a substrate and for treating, or modifying, the substrate surface, which can include the surface of the substrate or a deposited layer of coating material thereon. The PVD system includes a single vacuum (or process) chamber having an ion source and at least one PVD source of the coating material. The ion source, such as a linear ion source, is configured to emit a beam of energetic particles at a substrate for surface modification of the substrate surface, for example, to provide film densification, etching, cleaning, surface smoothing, and/or oxidation thereof. The PVD source(s) of the coating material deposits one or more layers of coating material(s) on the substrate. The uniformity of substrate surface modification and the thickness uniformity of the deposited layers can be maintained by velocity profiling of the rotating substrate within the vacuum chamber.

摘要翻译： 本发明涉及物理气相沉积（PVD）系统。 例如 行星系统，用于在衬底上形成一层或多层涂层材料，并用于处理或改性衬底表面，衬底表面可包括衬底的表面或其上的涂层材料的沉积层。 PVD系统包括具有离子源和涂层材料的至少一个PVD源的单个真空（或过程）室。 诸如线性离子源的离子源被配置为在衬底处发射高能粒子束，用于衬底表面的表面改性，例如以提供膜致密化，蚀刻，清洁，表面平滑化和/或氧化 其中。 涂层材料的PVD源在衬底上沉积一层或多层涂层材料。 衬底表面改性的均匀性和沉积层的厚度均匀性可以通过旋转衬底在真空室内的速度分布来保持。

公开(公告)号：US06934131B2

公开(公告)日：2005-08-23

申请号：US10341281

申请日：2003-01-13

申请人： Ming Mao ,  Adrian J. Devasahayam ,  Jacques C. S. Kools ,  Chih-Ling Lee ,  Chih-Ching Hu ,  Patricia L. Cox

发明人： Ming Mao ,  Adrian J. Devasahayam ,  Jacques C. S. Kools ,  Chih-Ling Lee ,  Chih-Ching Hu ,  Patricia L. Cox

IPC分类号： G11B5/39

CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G11B5/3906 ,  G11B2005/3996 ,  Y10T29/49044

摘要： A thermally stable spin valve sensor having an increased GMR ratio by virtue of an AP pinned layer structure in which the first and second pinned layers are separated by an AP coupling layer having a nano-oxide layer formed as an oxidized surface portion of the AP coupling layer. The nano-oxide layer provides an increase in the specular scattering, and in turn, an increase in the GMR ratio.

摘要翻译： 一种热稳定的自旋阀传感器，其具有通过AP钉扎层结构增加的GMR比，其中第一和第二被钉扎层由具有形成为AP耦合器的氧化表面部分的纳米氧化物层的AP耦合层分开 层。 纳米氧化物层提供了镜面散射的增加，并且进而增加了GMR比。

公开(公告)号：US06800565B2

公开(公告)日：2004-10-05

申请号：US10341282

申请日：2003-01-13

申请人： Chih-Ching Hu ,  Adrian J. Devasahayam ,  Patricia L. Cox ,  Chih-Ling Lee ,  Ming Mao ,  Jacques C. S. Kools

发明人： Chih-Ching Hu ,  Adrian J. Devasahayam ,  Patricia L. Cox ,  Chih-Ling Lee ,  Ming Mao ,  Jacques C. S. Kools

IPC分类号： H01L2131

CPC分类号： C23C14/5833 ,  C23C8/02 ,  C23C26/00 ,  C23C28/00 ,  G11B5/84

摘要： A method of forming a thin-film magnetic element, such as a TMR element or a spin valve element, on a substrate wherein at least a surface portion of a nonmagnetic metal layer is oxidized by cluster ion beam (CIB) oxidation. Specifically, the method comprises depositing a first magnetic layer on a substrate, then depositing a nonmagnetic metal layer on the first magnetic layer. At least a top surface of the nonmagnetic layer is oxidized by CIB oxidation. In one embodiment, only a top surface portion is oxidized such that a nano-oxide layer (NOL) is formed on a nonmagnetic conductive layer. In another embodiment, the nonmagnetic metal layer is oxidized throughout it's thickness such that the layer is converted to a nonmagnetic insulating film. After oxidation, a second magnetic layer is deposited on the oxidized layer. Oxidizing by cluster ion beam oxidation advantageously comprises mixing a pressurized inert carrier gas with oxygen gas to form a gas mixture and passing the gas mixture into a low pressure vacuum to produce a supersonic gas jet, whereby expansion occurs in the jet to cause formation of clusters of inert gas and oxygen atoms and molecules. The clusters are then ionized and focused into a cluster ion beam and accelerated toward the top surface of the nonmagnetic metal layer to bombard the top surface and react the ionized oxygen atoms and molecules with at least the top surface of the nonmagnetic metal layer.