公开(公告)号：US06843264B2

公开(公告)日：2005-01-18

申请号：US10323377

申请日：2002-12-18

申请人： Chih-Tien Chang ,  Hsueh-Chang Wu ,  Sunny Wu ,  Chien-Ling Huang ,  Chin-Hsin Peng ,  Mei-Seng Zhou

发明人： Chih-Tien Chang ,  Hsueh-Chang Wu ,  Sunny Wu ,  Chien-Ling Huang ,  Chin-Hsin Peng ,  Mei-Seng Zhou

IPC分类号： C23C16/44 ,  F16K11/10 ,  F16K1/18

CPC分类号： F16K1/223 ,  C23C16/4412 ,  Y10T137/0396 ,  Y10T137/86944 ,  Y10T137/87378 ,  Y10T137/87523

摘要： A new and improved, multi-phase pressure control valve for facilitating quick and accurate attainment and stabilization of gas pressure inside a semiconductor fabrication process chamber such as an etch chamber or CVD chamber. In one embodiment, the multi-phase pressure control valve is a butterfly-type valve which includes outer and inner vanes that independently control flow of gases from a process chamber to a vacuum pump. The larger-diameter outer vane stabilizes gas pressures within a large range, whereas the inner vane stabilizes pressure within a smaller range. In another embodiment, the multi-phase pressure control valve is a gate-type valve which may include a pivoting outer vane and an inner vane slidably disposed with respect to the outer vane for exposing a central gas flow opening in the outer vane.

摘要翻译： 一种新的和改进的多相压力控制阀，用于促进半导体制造工艺室（例如蚀刻室或CVD室）内的气体压力的快速和准确的获得和稳定。 在一个实施例中，多相压力控制阀是蝶形阀，其包括独立地控制气体从处理室到真空泵的流动的外叶片和内叶片。 较大直径的外叶片将气体压力稳定在大范围内，而内叶片将压力稳定在较小的范围内。 在另一个实施例中，多相压力控制阀是门型阀，其可以包括枢转外叶片和相对于外叶片可滑动地设置的用于暴露外叶片中的中心气流开口的内叶片。

公开(公告)号：US20050016467A1

公开(公告)日：2005-01-27

申请号：US10626998

申请日：2003-07-24

申请人： Yi-Li Hsiao ,  Mei-Sheng Zhou ,  Chin-Hsin Peng ,  Chien-Ling Huang ,  Tse-Yi Chen ,  Chun-Yi Lee ,  Hsueh-Chang Wu

发明人： Yi-Li Hsiao ,  Mei-Sheng Zhou ,  Chin-Hsin Peng ,  Chien-Ling Huang ,  Tse-Yi Chen ,  Chun-Yi Lee ,  Hsueh-Chang Wu

IPC分类号： C23C16/00 ,  H01L21/00

CPC分类号： H01L21/67248 ,  H01J2237/2001 ,  H01L21/67109

摘要： A system and method which is capable of compensating for unintended elevations in process temperatures induced in a substrate during a semiconductor fabrication process in order to reduce or eliminate disparities in critical dimensions of device features. The system may be a plasma etching system comprising a process chamber containing an electrostatic chuck (ESC) for supporting a wafer substrate. A chiller outside the process chamber includes a main coolant chamber, which contains a main coolant fluid, as well as an compensation coolant chamber, which contains an compensation coolant fluid. A main circulation loop normally circulates the main coolant fluid from the main coolant chamber through the electrostatic chuck to maintain the chuck at a desired set point temperature.

摘要翻译： 一种系统和方法，其能够在半导体制造过程期间补偿在衬底中感应的工艺温度中的意外高度，以便减少或消除器件特征的关键尺寸的不均匀性。 该系统可以是包括含有用于支撑晶片衬底的静电吸盘（ESC）的处理室的等离子体蚀刻系统。 处理室外部的冷却器包括主冷却剂室，其包含主冷却剂流体，以及补偿冷却剂室，其包含补偿冷却剂流体。 主循环回路通常使主冷却剂流体从主冷却剂室通过静电吸盘循环，以将卡盘保持在所需的设定点温度。

公开(公告)号：US06896304B2

公开(公告)日：2005-05-24

申请号：US10234068

申请日：2002-09-03

申请人： Hsiao-Yi Li ,  Chin-Hsin Peng ,  Cheng-Shun Chan ,  Jiann-Sheng Chang ,  Chung-Hao Tseng ,  Chien-Ling Huang

发明人： Hsiao-Yi Li ,  Chin-Hsin Peng ,  Cheng-Shun Chan ,  Jiann-Sheng Chang ,  Chung-Hao Tseng ,  Chien-Ling Huang

IPC分类号： H01L21/00 ,  H01L21/687 ,  B25J15/06

CPC分类号： H01L21/67288 ,  H01L21/67259 ,  H01L21/68707 ,  Y10S294/907 ,  Y10S414/141

摘要： An automatic sensing wafer blade for picking up wafers that is equipped with a sensor capable of self-diagnosing potential failure conditions of the blade and a method for using the wafer blade are described. The automatic sensing wafer blade is equipped with a V-shaped seal ring on a top surface, and a sensor of either a limit switch or a capacitance sensor for sensing the presence or absence of a wafer on top of the wafer blade. The automatic sensing wafer blade is further capable of self-diagnosing any potential failure conditions of the function of the wafer blade due to contaminating particles, or contaminating liquid on the wafer surface, or due to an aged or malfunctioning seal ring on top of the wafer blade.

摘要翻译： 描述了用于拾取晶片的自动感测晶片刀片，其配备有能够自我诊断刀片的潜在故障状况的传感器以及使用晶片刀片的方法。 自动感测晶片叶片在顶表面上配备有V形密封环，以及限制开关或电容传感器的传感器，用于感测在晶片叶片顶部存在或不存在晶片。 自动感测晶片刀片还能够自动诊断由于污染颗粒或晶片表面上的污染液体的晶片叶片的功能的任何潜在故障状况，或者由于晶片顶部的老化或故障密封环 刀。

公开(公告)号：US06926584B2

公开(公告)日：2005-08-09

申请号：US10267614

申请日：2002-10-09

申请人： Chao-Jung Chang ,  Ping-Hsu Chen ,  Chin-Hsin Peng ,  Jui-Cheng Lo ,  Chien-Kuo Lu ,  Chien-Ling Huang

发明人： Chao-Jung Chang ,  Ping-Hsu Chen ,  Chin-Hsin Peng ,  Jui-Cheng Lo ,  Chien-Kuo Lu ,  Chien-Ling Huang

IPC分类号： B24B37/04 ,  B24B57/02 ,  B24B49/00

CPC分类号： B24B37/04 ,  B24B57/02

摘要： A DMHC (dual mode hybrid control) system and method which facilitates enhanced control in the delivery of polishing slurry to a CMP (chemical mechanical polishing) apparatus. The DMHC comprises a linear table and a PID (proportional integrated differential) controller operably connected to a slurry pump provided in a slurry flow conduit which delivers the polishing slurry to the CMP apparatus. A bubble trap and a flowmeter provided in the slurry flow conduit downstream of the slurry pump are operably connected to the PID controller, and the CMP apparatus is located downstream of the flowmeter.

摘要翻译： 一种DMHC（双模式混合控制）系统和方法，其有助于增强抛光浆料输送到CMP（化学机械抛光）装置中的控制。 DMHC包括线性工作台和可操作地连接到浆料泵的PID（比例积分微分）控制器，所述浆料泵设置在将抛光浆料输送到CMP设备的浆料流动管道中。 设置在泥浆泵下游的泥浆流动管道中的气泡阱和流量计可操作地连接到PID控制器，并且CMP设备位于流量计的下游。