METHOD AND APPARATUS FOR MICRO-CODE EXECUTION
    1.
    发明申请
    METHOD AND APPARATUS FOR MICRO-CODE EXECUTION 有权
    微码执行的方法和装置

    公开(公告)号:US20070220240A1

    公开(公告)日:2007-09-20

    申请号:US11276318

    申请日:2006-02-24

    CPC classification number: G06F9/24 G06F8/65

    Abstract: A method for micro-code execution for an electronic device is disclosed. The method includes: providing the electronic device with a micro-code partitioned into a main core and at least a function code, the micro-code being stored in a first storage module of the electronic device; and when the electronic device is powered on, loading the main core from the first storage module into a second storage module of the electronic device, and switching between the second storage module for executing the main core and the first storage module for executing the function code to control operation of the electronic device. The function code is executed when called by execution of the main core.

    Abstract translation: 公开了一种用于电子设备的微码执行方法。 该方法包括:向电子设备提供划分成主核心的微码和至少一个功能码,微码存储在电子设备的第一存储模块中; 并且当所述电子设备通电时,将所述主芯从所述第一存储模块装载到所述电子设备的第二存储模块中,并且在用于执行所述主核心的所述第二存储模块与所述第一存储模块之间进行切换以执行所述功能代码 以控制电子设备的操作。 当通过主核心执行调用时,执行功能代码。

    Method and apparatus for micro-code execution
    2.
    发明授权
    Method and apparatus for micro-code execution 有权
    用于微码执行的方法和装置

    公开(公告)号:US07600062B2

    公开(公告)日:2009-10-06

    申请号:US11276318

    申请日:2006-02-24

    CPC classification number: G06F9/24 G06F8/65

    Abstract: A method for micro-code execution for an electronic device is disclosed. The method includes: providing the electronic device with a micro-code partitioned into a main core and at least a function code, the micro-code being stored in a first storage module of the electronic device; and when the electronic device is powered on, loading the main core from the first storage module into a second storage module of the electronic device, and switching between the second storage module for executing the main core and the first storage module for executing the function code to control operation of the electronic device. The function code is executed when called by execution of the main core.

    Abstract translation: 公开了一种用于电子设备的微码执行方法。 该方法包括:向电子设备提供划分成主核心的微码和至少一个功能码,微码存储在电子设备的第一存储模块中; 并且当所述电子设备通电时,将所述主芯从所述第一存储模块装载到所述电子设备的第二存储模块中,并且在用于执行所述主核心的所述第二存储模块和所述第一存储模块之间进行切换以执行所述功能代码 以控制电子设备的操作。 当通过主核心执行调用时,执行功能代码。

    SIDE-TYPE BACKLIGHT MODULE
    3.
    发明申请
    SIDE-TYPE BACKLIGHT MODULE 审中-公开
    侧面背光模组

    公开(公告)号:US20090190372A1

    公开(公告)日:2009-07-30

    申请号:US12123469

    申请日:2008-05-20

    Applicant: Ching-Hua Su

    Inventor: Ching-Hua Su

    CPC classification number: G02B6/0028 G02B6/0018 G02F1/133615

    Abstract: A side-type backlight module including a lampshade, a light guide plate (LGP), a plurality of point light sources and a reflection structure is provided. The LGP has a light incident surface disposed at an opening of the lampshade. The point light sources are disposed between the lampshade and the LGP. The reflection structure is disposed between the LGP and the lampshade, and has first light outlets, at least a second light outlet, sinks, first reflecting elements and at least a second reflecting element. The sinks are disposed corresponding to the first light outlets. The point light sources are disposed in the sinks. The second light outlet is located between and adjacent to the first light outlets. The first reflecting elements are disposed at the junctions of each first light outlet and the second light outlet. The second reflecting element is disposed corresponding to the second light outlet.

    Abstract translation: 提供了一种包括灯罩,导光板(LGP),多个点光源和反射结构的侧面型背光模组。 LGP具有设置在灯罩开口处的光入射表面。 点光源设置在灯罩和LGP之间。 反射结构设置在LGP和灯罩之间,并且具有第一光出口,至少第二光出口,吸收器,第一反射元件和至少第二反射元件。 水槽相对于第一光出口设置。 点光源设置在水槽中。 第二光出口位于第一光出口之间并且与第一光出口相邻。 第一反射元件设置在每个第一光出口和第二光出口的交界处。 第二反射元件对应于第二光出口设置。

    ANTI-CANCER DRUG COMPOSITION INCLUDING GANODERMA EXTRACT AND AMPHOTERICIN B
    4.
    发明申请
    ANTI-CANCER DRUG COMPOSITION INCLUDING GANODERMA EXTRACT AND AMPHOTERICIN B 审中-公开
    抗癌药物组合物,包括甘草提取物和AMPHOTERICIN B

    公开(公告)号:US20170056460A1

    公开(公告)日:2017-03-02

    申请号:US15044794

    申请日:2016-02-16

    CPC classification number: A61K36/074 A61K31/7048 A61K2300/00

    Abstract: An anti-cancer drug composition includes a Ganoderma extract having a concentration of 1-5 mg/ml and an amphotericin B having a concentration of 3-10 μM. The Ganoderma extract and the amphotericin B are medicated at different times by pre-treating cancer cells with the Ganoderma extract for a period of time followed by administration of the amphotericin B to enhance an anti-cancer effect of the amphotericin B.

    Abstract translation: 抗癌药物组合物包括浓度为1-5mg / ml的灵芝提取物和浓度为3-10μM的两性霉素B。 灵芝提取物和两性霉素B通过用灵芝提取物预处理癌细胞一段时间,然后施用两性霉素B以增强两性霉素B的抗癌作用,在不同时间进行药物治疗。

    Method of promoting single crystal growth during melt growth of semiconductors
    5.
    发明授权
    Method of promoting single crystal growth during melt growth of semiconductors 有权
    在半导体熔融生长过程中促进单晶生长的方法

    公开(公告)号:US08535440B1

    公开(公告)日:2013-09-17

    申请号:US12758169

    申请日:2010-04-12

    Applicant: Ching-Hua Su

    Inventor: Ching-Hua Su

    CPC classification number: C30B29/48 C30B11/007

    Abstract: The method of the invention promotes single crystal growth during fabrication of melt growth semiconductors. A growth ampoule and its tip have a semiconductor source material placed therein. The growth ampoule is placed in a first thermal environment that raises the temperature of the semiconductor source material to its liquidus temperature. The growth ampoule is then transitioned to a second thermal environment that causes the semiconductor source material in the growth ampoule's tip to attain a temperature that is below the semiconductor source material's solidus temperature. The growth ampoule so-transitioned is then mechanically perturbed to induce single crystal growth at the growth ampoule's tip.

    Abstract translation: 本发明的方法在制造熔融生长半导体期间促进单晶生长。 生长安瓿和其尖端具有放置在其中的半导体源材料。 将生长安瓿放置在将半导体源材料的温度提高到其液相线温度的第一热环境中。 然后将生长安瓿转变成使得生长安瓿尖端中的半导体源材料达到低于半导体源材料的固相线温度的温度的第二热环境。 然后将如此转化的生长安瓿机械地扰动以在生长安瓿的尖端处诱导单晶生长。

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