SPIN TRANSISTOR USING N-TYPE AND P-TYPE DOUBLE CARRIER SUPPLY LAYER STRUCTURE
    3.
    发明申请
    SPIN TRANSISTOR USING N-TYPE AND P-TYPE DOUBLE CARRIER SUPPLY LAYER STRUCTURE 有权
    使用N型和P型双载波供电层结构的旋转晶体管

    公开(公告)号:US20110284937A1

    公开(公告)日:2011-11-24

    申请号:US12858702

    申请日:2010-08-18

    IPC分类号: H01L29/82

    摘要: A spin transistor that includes: a semiconductor substrate including an upper cladding layer and a lower cladding layer, and a channel layer interposed between the upper and lower cladding layers; a ferromagnetic source and a ferromagnetic drain formed on the semiconductor substrate and spaced from each other in a length direction of the channel layer; and a gate electrode formed on the semiconductor substrate between the source and the drain and having applied a gate voltage thereto to control a spin precession of an electron passing through the channel layer, wherein the semiconductor substrate includes a first carrier supply layer of a first conductivity type disposed below the lower cladding layer and supplying carriers to the channel layer, and a second carrier supply layer of a second conductivity type opposite to the first conductivity type formed on the upper cladding layer and supplying the carriers to the channel layer.

    摘要翻译: 一种自旋晶体管,包括:包括上包层和下包层的半导体衬底,以及介于上包层和下包层之间的沟道层; 形成在所述半导体基板上并且在所述沟道层的长度方向上彼此间隔开的铁磁源和铁磁性漏极; 以及形成在所述源极和漏极之间的所述半导体衬底上并且施加了栅极电压以用于控制通过所述沟道层的电子的自旋进动的栅电极,其中所述半导体衬底包括具有第一导电性的第一载流子供应层 类型,其设置在所述下包层下方并且将沟道层供给到所述沟道层;以及第二导电类型的第二载流子供应层,其形成在所述上包层上并且将所述载流子提供给所述沟道层。

    TEXT INPUT METHOD IN PORTABLE DEVICE AND PORTABLE DEVICE SUPPORTING THE SAME
    4.
    发明申请
    TEXT INPUT METHOD IN PORTABLE DEVICE AND PORTABLE DEVICE SUPPORTING THE SAME 有权
    便携式设备中的文本输入方法和支持它的便携式设备

    公开(公告)号:US20110225529A1

    公开(公告)日:2011-09-15

    申请号:US13042696

    申请日:2011-03-08

    IPC分类号: G06F3/048

    摘要: A text input method in a portable device and a portable device supporting the same are provided. The portable device includes, a touch screen including a display unit for displaying a text input area and a text display area including at least one consonant and vowel, and a touch panel provided at an upper side of the display unit for generating a touch event, and a control unit for controlling text displayed according to a touch event generated from the touch screen, in which the control unit detects multi-touch events for at least two key icons output on the text input area, and controls the display of a specific text composed of a combination of the multi-touched key icons based on the detected multi-touch events.

    摘要翻译: 提供了便携式设备中的文本输入方法和支持它的便携式设备。 便携式设备包括:触摸屏,其包括用于显示文本输入区域的显示单元和包括至少一个辅音和元音的文本显示区域;以及设置在所述显示单元的上侧以产生触摸事件的触摸面板, 以及控制单元,用于控制根据从触摸屏产生的触摸事件显示的文本,其中控制单元检测在文本输入区域上输出的至少两个键图标的多点触摸事件,并且控制特定文本的显示 由基于检测到的多点触摸事件的多点触摸的键图标的组合构成。

    THIN FILM TRANSISTOR ARRAY PANEL AND DISPLAY DEVICE INCLUDING THE SAME
    5.
    发明申请
    THIN FILM TRANSISTOR ARRAY PANEL AND DISPLAY DEVICE INCLUDING THE SAME 有权
    薄膜晶体管阵列和包括其的显示器件

    公开(公告)号:US20130293524A1

    公开(公告)日:2013-11-07

    申请号:US13597940

    申请日:2012-08-29

    IPC分类号: G06F3/038

    摘要: Exemplary embodiments of the present invention relate to a panel and a display device including the same, the panel including a substrate, a signal line arranged on the substrate, the signal line configured to transmit a driving signal, an insulating layer arranged on the signal line, and a pixel electrode and a contact assistant arranged on the insulating layer. The contact assistant is electrically connected to a portion of the signal line, the contact assistant includes indium zinc oxide doped with a metal oxide not including indium or zinc, and the metal oxide has a smaller Gibbs free energy than zinc oxide.

    摘要翻译: 本发明的示例性实施例涉及面板和包括该面板的显示装置,面板包括基板,布置在基板上的信号线,被配置为传输驱动信号的信号线,布置在信号线上的绝缘层 以及布置在绝缘层上的像素电极和接触助剂。 接触辅助件电连接到信号线的一部分,接触助剂包括掺杂有不包括铟或锌的金属氧化物的氧化铟锌,并且金属氧化物具有比氧化锌更小的吉布斯自由能。