Acoustic-optical device for optical filtering
    1.
    发明授权
    Acoustic-optical device for optical filtering 失效
    用于光学滤波的声光装置

    公开(公告)号:US5652808A

    公开(公告)日:1997-07-29

    申请号:US575086

    申请日:1995-12-19

    IPC分类号: G02F1/125 G02B6/126 G02F1/00

    CPC分类号: G02F1/125 G02F2203/055

    摘要: An acoustic-optical device for optical filtering includes two successive acoustic-optical interaction segments separated by an intermediate polarizer and each modifying the polarization of light guided by it. The modification depends on the frequencies of the interacting optical and acoustic waves. The acoustic waves are supplied symmetrically to the two interaction segments from a common electro-optical transducer. The transmission spectrum of the optical filter is subject to apodization by coupling between an auxiliary acoustic waveguide including the transducer and a main acoustic waveguide including the optical waveguide. Applications of the device include fiber optic telecommunication systems.

    摘要翻译: 用于光学滤波的声光装置包括由中间偏振器分离的两个连续的声光相互作用段,并且每个修改由其引导的光的偏振。 修改取决于相互作用的光和声波的频率。 声波从公共电光换能器对称地提供给两个相互作用段。 滤光器的透射光谱通过包括换能器的辅助声波导和包括光波导的主声波导之间的耦合进行变迹。 该设备的应用包括光纤通信系统。

    Semiconductor optical component and a method of fabricating it
    3.
    发明授权
    Semiconductor optical component and a method of fabricating it 有权
    半导体光学元件及其制造方法

    公开(公告)号:US06788720B2

    公开(公告)日:2004-09-07

    申请号:US10246425

    申请日:2002-09-19

    IPC分类号: H01S504

    摘要: A semiconductor optical component is disclosed which comprises a current injection region and at least one electrically isolated region referred to as a first plateau, each region containing a contact layer of an alloy based on gallium arsenide, GaAs, deposited on a semiconductor material upper confinement layer. The component further comprises in the first plateau a dielectric material isolation layer on top of the contact layer. An attachment layer is disposed between the contact layer and the isolation layer to increase the adhesion of the isolation layer to the contact layer. A method of fabricating the above kind of component is also disclosed.

    摘要翻译: 公开了一种半导体光学部件,其包括电流注入区域和被称为第一平台的至少一个电隔离区域,每个区域包含沉积在半导体材料上部约束层上的基于砷化镓的合金的接触层 。 该组件还在第一平台中包括在接触层顶部的介电材料隔离层。 附着层设置在接触层和隔离层之间,以增加隔离层与接触层的粘合性。 还公开了制造上述类型的部件的方法。

    Method of fabricating a component with crystalline silicon substrate
    4.
    发明授权
    Method of fabricating a component with crystalline silicon substrate 失效
    用晶体硅衬底制造组件的方法

    公开(公告)号:US06584807B1

    公开(公告)日:2003-07-01

    申请号:US08822642

    申请日:1997-03-24

    IPC分类号: C03B2000

    摘要: A method of fabricating a component having a crystalline silicon substrate includes the steps of depositing a layer of silica onto a crystalline silicon substrate, this silica layer being doped with dopants, and then treating the substrate. Before the doped silica layer is deposited, a barrier layer is formed on the substrate, consisting of a barrier material opposing diffusion of the dopants. The doped silica layer is deposited onto this barrier layer. The invention finds one particular application in connecting flat bundles of fibers in communication networks.

    摘要翻译: 制造具有晶体硅衬底的部件的方法包括以下步骤:在结晶硅衬底上沉积二氧化硅层,该二氧化硅层掺杂有掺杂剂,然后处理衬底。 在沉积掺杂二氧化硅层之前,在由与掺杂剂扩散相反的阻挡材料组成的衬底上形成阻挡层。 掺杂的二氧化硅层沉积在该阻挡层上。 本发明在通信网络中连接扁平的光纤束方面发现了一个特殊的应用。