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    Photonic integrated circuit incorporating a bandgap temperature sensor
    3.
    发明授权
    Photonic integrated circuit incorporating a bandgap temperature sensor 有权
    带有带隙温度传感器的光子集成电路

    公开(公告)号：US09513437B2

    公开(公告)日：2016-12-06

    申请号：US14931076

    申请日：2015-11-03

    Applicant: Coriant Advanced Technology, LLC

    Inventor： Yi Zhang ,  Shuyu Yang ,  Kishore Padmaraju ,  Michael J. Hochberg

    IPC: G02F1/225 ,  G02B6/26 ,  G02B6/134 ,  G02B6/122 ,  G02B6/12

    CPC classification number: G02B6/134 ,  G02B6/1225 ,  G02B2006/12135 ,  G02B2006/12138 ,  G02B2006/12159 ,  G02F1/2257 ,  G02F2202/32

    Abstract: An optical device that includes means for thermal stabilization and control is described. The optical device can be a ring resonator, or another device that requires accurate control of the phase of the optical signal. In an example involving an optical resonator, a thermal stabilization system includes a temperature sensor, a control circuit, and a heater local to the resonator. The temperature sensor can be a bandgap temperature sensor formed of a pair of matched p/n junctions biased in operation at different junction currents.

    Abstract translation: 描述了包括用于热稳定和控制的装置的光学装置。 光学器件可以是环形谐振器，或者需要对光信号的相位进行精确控制的另一器件。 在涉及光学谐振器的示例中，热稳定系统包括温度传感器，控制电路和谐振器局部的加热器。 温度传感器可以是带隙温度传感器，其由在不同结电流处工作而偏置的一对匹配的p / n结形成。

    SILICON ELECTRO-OPTICAL MODULATOR
    5.
    发明申请
    SILICON ELECTRO-OPTICAL MODULATOR 有权
    硅电极调制器

    公开(公告)号：US20160202503A1

    公开(公告)日：2016-07-14

    申请号：US14298859

    申请日：2014-06-06

    Applicant: ACACIA COMMUNICATIONS INC.

    Inventor： Long CHEN

    IPC: G02F1/025

    CPC classification number: G02F1/025 ,  G02B6/00 ,  G02B6/134 ,  G02F2001/0156

    Abstract: Disclosed are designs and methods of fabrication of silicon carrier-depletion based electro-optical modulators having doping configurations that produce modulators exhibiting desirable modulation efficiency, optical absorption loss and bandwidth characteristics. The disclosed method of fabrication of a modulator having such doping configurations utilizes counter doping to create narrow regions of relatively high doping levels near a waveguide center.

    Abstract translation: 公开了具有掺杂配置的基于硅载波耗尽的电光调制器的设计和方法，所述掺杂配置产生显示期望的调制效率，光吸收损耗和带宽特性的调制器。 所公开的具有这种掺杂配置的调制器的制造方法利用反掺杂来在波导中心附近产生相对高的掺杂浓度的窄区域。

    METHOD FOR MANUFACTURING A WAVEGUIDE INCLUDING A SEMI-CONDUCTING JUNCTION
    6.
    发明申请
    METHOD FOR MANUFACTURING A WAVEGUIDE INCLUDING A SEMI-CONDUCTING JUNCTION 有权
    用于制造包括半导体结的波导的方法

    公开(公告)号：US20160154180A1

    公开(公告)日：2016-06-02

    申请号：US14953773

    申请日：2015-11-30

    Applicant: Commissariat A L'Energie Atomique et aux Energies Alternatives

    Inventor： Maryse FOURNIER ,  Daivid Fowler ,  Edouard Grellier ,  Lorenzo Iotti

    IPC: G02B6/134 ,  G02F1/025 ,  G02F1/225 ,  G02B6/136

    CPC classification number: G02B6/1347 ,  G02B6/00 ,  G02B6/134 ,  G02B6/1342 ,  G02B6/136 ,  G02F1/025 ,  G02F1/2257 ,  G02F2001/212 ,  H01L2223/6627 ,  H01L2223/6633

    Abstract: The invention relates to a method for manufacturing a waveguide (40) including a semiconducting junction (23). The method comprises the following steps: providing a support (10) comprising a semiconducting layer (20) having a first part (21) of a first conductivity type ; protecting the first part ; selectively implanting a second conductivity-type dopants in a second part (22) of the semiconducting layer (20) adjacent to the first part (21, 221). The concentration of second conductivity-type dopants in the second part (22, 222) is greater than the one of first conductivity-type dopants in the first part (21, 221). The method further comprises the steps of: diffusing second conductivity-type dopants in the first part (21, 221) to form a semiconducting junction (23, 223) in the first part (21, 221), and partially etching the semiconducting layer (20, 200) to form the waveguide (40, 240) in the first part (21, 221), the protection of the first part (21, 221) being used so that the semiconducting junction (23, 223) is included in the waveguide (40, 240).

    Abstract translation: 本发明涉及一种制造包括半导体结（23）的波导（40）的方法。 该方法包括以下步骤：提供包括具有第一导电类型的第一部分（21）的半导体层（20）的支撑件（10） 保护第一部分; 在所述半导体层（20）的与所述第一部分（21,221）相邻的第二部分（22）中选择性地注入第二导电型掺杂剂。 第二部分（22,222）中的第二导电型掺杂剂的浓度大于第一部分（21,221）中的第一导电类型掺杂剂的浓度。 该方法还包括以下步骤：在第一部分（21,221）中扩散第二导电型掺杂剂以在第一部分（21,221）中形成半导体结（23,223），并部分地蚀刻半导体层 20,200），以在第一部分（21,221）中形成波导（40,240），使用第一部分（21,221）的保护，使得半导体结（23,223）被包括在 波导（40,240）。

    DEVICE FABRICATION WITH PLANAR BRAGG GRATINGS SUPPRESSING PARASITIC EFFECTS
    7.
    发明申请
    DEVICE FABRICATION WITH PLANAR BRAGG GRATINGS SUPPRESSING PARASITIC EFFECTS 有权
    具有平面布拉格光栅的器件制造抑制PARASITIC效应

    公开(公告)号：US20100303411A1

    公开(公告)日：2010-12-02

    申请号：US12787652

    申请日：2010-05-26

    Applicant: Radu Barsan ,  Lew Stolpner

    Inventor： Radu Barsan ,  Lew Stolpner

    IPC: G02B6/34 ,  G02B6/10

    CPC classification number: G02B6/124 ,  B82Y20/00 ,  G02B6/12007 ,  G02B6/1225 ,  G02B6/132 ,  G02B6/134

    Abstract: The present invention relates to various methods of fabricating Planar Bragg Gratings (PBG) in a doped waveguide in a Planar Lightwave Circuit (PLC) device, suppressing unwanted parasitic grating effects during fabrication of the device. One approach to reduce parasitic gratings is to use a hard mask before the waveguide photolithography and etch, that results in a steeper sidewall angle that reduces or eliminates the parasitic grating effect. Another method of reducing parasitic grating effect is to deposit a layer of developable Bottom Anti Reflective Coating (BARC) prior to depositing the photo resist for waveguide etch. A third method of resisting parasitic gratings comprises using a planarizing undoped silica layer as a barrier layer on top of the core. During subsequent high temperature annealing germanium outdiffuses laterally into the cladding. The net effect is an optical waveguide with improved lateral uniformity because germanium diffusion smoothes out the sidewall roughness created during the waveguide reactive ion etch process. The undoped silica (SiO2) layer on top of the grating also serves the purpose of significantly reducing germanium outdiffusion from the core in the upward direction.

    Abstract translation: 本发明涉及在平面光波电路（PLC）器件中的掺杂波导中制造平面布拉格光栅（PBG）的各种方法，其在器件制造期间抑制不期望的寄生光栅效应。 减少寄生光栅的一种方法是在波导光刻和蚀刻之前使用硬掩模，这导致更陡峭的侧壁角度，其减小或消除寄生光栅效应。 减少寄生光栅效应的另一种方法是在淀积用于波导蚀刻的光致抗蚀剂之前沉积一层可显影的底部防反射涂层（BARC）。 抵抗寄生光栅的第三种方法包括使用平坦化未掺杂的二氧化硅层作为核心顶部上的阻挡层。 在随后的高温退火中锗向外扩散到包层中。 净效应是具有改进的横向均匀性的光波导，因为锗扩散平滑了在波导反应离子蚀刻工艺期间产生的侧壁粗糙度。 光栅顶部的未掺杂的二氧化硅（SiO 2）层也用于在向上的方向上显着地减少核的锗扩散。

    WAVEGUIDE DEVICES USING EVANESCENT COUPLING BETWEEN WAVEGUIDES AND GROOVES
    8.
    发明申请
    WAVEGUIDE DEVICES USING EVANESCENT COUPLING BETWEEN WAVEGUIDES AND GROOVES 有权
    使用波形和栅格之间的过渡耦合的波形器件

    公开(公告)号：US20100172610A1

    公开(公告)日：2010-07-08

    申请号：US12596105

    申请日：2008-03-20

    Applicant: James Christopher Gates ,  Corin Barry Edmund Gawith ,  Peter George Robin Smith

    Inventor： James Christopher Gates ,  Corin Barry Edmund Gawith ,  Peter George Robin Smith

    IPC: G02B6/12 ,  G02B6/26 ,  G02B6/10

    CPC classification number: G01N21/774 ,  G01N21/4133 ,  G02B6/12004 ,  G02B6/12007 ,  G02B6/134 ,  G02B2006/12107 ,  G02B2006/12121 ,  G02B2006/12138 ,  G02B2006/12142 ,  H01S3/022 ,  H01S3/0635 ,  H01S3/1055 ,  H01S3/213 ,  H01S3/30

    Abstract: An optical waveguide device (10) comprises a planar substrate with a lower cladding layer (14), a core layer (16) and an upper cladding layer (18), a groove (20) in the substrate that extends at least into the core layer (16), and a waveguiding channel (22) in the core layer (16), wherein at least a part of the waveguiding channel (22), which may contain a Bragg grating, is sufficiently proximate to the groove (20) in the plane of the substrate for an evanescent field of light propagating in the waveguiding channel (22) to extend laterally into the groove (20). Material contained in the groove modifies the properties of the waveguiding channel, so that a sample of material can be analysed or an active material can be used to modulate the propagating light. The groove (20) can be made before the waveguide (22). The groove (20) can be made by cutting into the substrate with a saw and the waveguide (22) can be made by direct writing in the core layer (16) with an ultraviolet beam.

    Abstract translation: 一种光波导器件（10）包括具有下包层（14），芯层（16）和上覆层（18）的平面衬底，衬底中的凹槽（20）至少延伸到芯 层（16）和芯层（16）中的波导通道（22），其中可以包含布拉格光栅的波导通道（22）的至少一部分足够靠近凹槽（20） 用于在波导通道（22）中传播的光的消逝场的衬底的平面以横向延伸到凹槽（20）中。 包含在槽中的材料改变了波导通道的特性，使得可以分析材料样品或者可以使用活性材料来调制传播光。 凹槽（20）可以在波导（22）之前制成。 槽（20）可以通过用锯切割到基板中而制成，并且波导（22）可以通过用紫外线直接写入芯层（16）而制成。

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