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公开(公告)号：US08076243B2
公开(公告)日：2011-12-13
申请号：US12693930
申请日：2010-01-26
IPC分类号： H01L23/48
CPC分类号： H01L21/28562 , C23C16/18 , C23C16/45536 , C23C16/45553 , H01L21/76871
摘要： Compositions and methods for forming a metal-containing thin film on a substrate. A reactor and at least one substrate in the reactor are provided. A metal-containing bis-β-diketiminate precursor is introduced into the reactor. The reactor is maintained at a set temperature and pressure, and the precursor is contacted with the substrate to form a metal-containing film on the substrate.
摘要翻译： 在基材上形成含金属薄膜的组合物和方法。 提供反应器和反应器中的至少一个基板。 将含金属的双 - 二氮嗪酮前体引入反应器。 将反应器保持在设定的温度和压力下，并将前体与基底接触以在基底上形成含金属的膜。
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公开(公告)号：US08349738B2
公开(公告)日：2013-01-08
申请号：US13293878
申请日：2011-11-10
IPC分类号： H01L21/44
CPC分类号： H01L21/28562 , C23C16/18 , C23C16/45536 , C23C16/45553 , H01L21/76871
摘要： Compositions and methods for forming a metal-containing thin film on a substrate. A reactor and at least one substrate in the reactor are provided. A metal-containing bis-β-diketiminate precursor is introduced into the reactor. The reactor is maintained at a set temperature and pressure, and the precursor is contacted with the substrate to form a metal-containing film on the substrate.
摘要翻译： 在基材上形成含金属薄膜的组合物和方法。 提供反应器和反应器中的至少一个基板。 将含金属的双 - 二氮嗪酮前体引入反应器。 将反应器保持在设定的温度和压力下，并将前体与基底接触以在基底上形成含金属的膜。
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公开(公告)号：US20120122313A1
公开(公告)日：2012-05-17
申请号：US13293878
申请日：2011-11-10
IPC分类号： H01L21/3205
CPC分类号： H01L21/28562 , C23C16/18 , C23C16/45536 , C23C16/45553 , H01L21/76871
摘要： Compositions and methods for forming a metal-containing thin film on a substrate. A reactor and at least one substrate in the reactor are provided. A metal-containing bis-β-diketiminate precursor is introduced into the reactor. The reactor is maintained at a set temperature and pressure, and the precursor is contacted with the substrate to form a metal-containing film on the substrate.
摘要翻译： 在基材上形成含金属薄膜的组合物和方法。 提供反应器和反应器中的至少一个基板。 将含金属的双 - 二氮嗪酮前体引入反应器。 将反应器保持在设定的温度和压力下，并将前体与基底接触以在基底上形成含金属的膜。
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4.发明申请PLASMA-ENHANCED DEPOSITION OF MANGANESE-CONTAINING FILMS FOR VARIOUS APPLICATIONS USING AMIDINATE MANGANESE PRECURSORS 审中-公开使用氨基甲酸锰前体的各种应用的含锰膜的等离子体增强沉积公开(公告)号：US20130089679A1
公开(公告)日：2013-04-11
申请号：US13269140
申请日：2011-10-07
IPC分类号： C23C16/06
CPC分类号： C23C16/06 , C23C16/18 , C23C16/45536 , C23C16/45553 , C23C16/50
摘要： The disclosure relates to a process for depositing a Manganese-containing film comprising the step of providing a metal guanidinate and/or metal amidinate precursor, suitable for plasma deposition at temperature equal or lower than 500 degrees C., to a plasma deposition process comprising a deposition temperature equal or lower than 500 degrees C.
摘要翻译： 本公开涉及一种用于沉积含锰的膜的方法，包括以下步骤：提供适于在等于或低于500摄氏度的温度下等离子体沉积的金属胍和/或金属脒前体，等离子体沉积方法包括 沉积温度等于或低于500摄氏度
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5.发明申请BETA-DIKETIMINATE PRECURSORS FOR METAL CONTAINING FILM DEPOSITION 审中-公开用于含金属膜沉积的BETA-DIKETIMINATE前体公开(公告)号：US20100003532A1
公开(公告)日：2010-01-07
申请号：US12480472
申请日：2009-06-08
CPC分类号： C07C251/12 , C23C16/18 , Y10T428/31678
摘要： Methods and compositions for depositing a metal containing film on a substrate are disclosed. A reactor, and at least one substrate disposed in the reactor, are provided. A metal containing precursor with at least one β-diketiminate ligand is provided and introduced into the reactor, which is maintained at a temperature of at least 100° C. Metal is deposited onto the substrate through a deposition process to form a thin film on the substrate.
摘要翻译： 公开了在基底上沉积含金属膜的方法和组合物。 提供反应器和设置在反应器中的至少一个基板。 提供含有至少一种β-二酮酸酯配体的含金属的前体，并将其引入反应器中，该反应器保持在至少100℃的温度。金属通过沉积工艺沉积到基底上，以形成薄膜 基质。
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6.发明申请PLASMA-ENHANCED DEPOSITION OF TITANIUM-CONTAINING FILMS FOR VARIOUS APPLICATIONS USING AMIDINATE TITANIUM PRECURSORS 审中-公开使用氨基锡钛前驱体的各种应用的含钛薄膜的等离子体增强沉积公开(公告)号：US20130089681A1
公开(公告)日：2013-04-11
申请号：US13269163
申请日：2011-10-07
IPC分类号： C23C16/18
CPC分类号： C23C16/18 , C23C16/45536 , C23C16/45553
摘要： The present invention relates to a process for the use of Titanium amidinate metal precursors for the deposition of Titanium-containing films via Plasma Enhanced Atomic Layer Deposition (PEALD) or Plasma Enhanced Chemical Vapor Deposition (PECVD).
摘要翻译： 本发明涉及用于通过等离子体增强原子层沉积（PEALD）或等离子体增强化学气相沉积（PECVD）沉积含钛膜的钛脒金属前体的方法。
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7.发明授权Cyclopentadienyl transition metal precursors for deposition of transition metal-containing films 有权用于沉积含过渡金属的膜的环戊二烯基过渡金属前体公开(公告)号：US08617649B2
公开(公告)日：2013-12-31
申请号：US13618949
申请日：2012-09-14
IPC分类号： B05D3/02
CPC分类号： C23C16/18 , C23C16/45553
摘要： Methods and compositions for depositing a film on one or more substrates include providing a reactor with at least one substrate disposed in the reactor. At least one metal precursor are provided and at least partially deposited onto the substrate to form a metal-containing film.
摘要翻译： 在一个或多个基底上沉积膜的方法和组合物包括提供反应器中设置有至少一个底物的反应器。 提供至少一种金属前体并且至少部分地沉积到基底上以形成含金属的膜。
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公开(公告)号：US20130059077A1
公开(公告)日：2013-03-07
申请号：US13549910
申请日：2012-07-16
IPC分类号： C23C16/06
CPC分类号： C23C16/18 , C23C16/45553
摘要： Methods for deposition of metal films consisting essentially of Co, Mn, Ru or a lanthanide on surfaces using metal coordination complexes are provided. The precursors used in the process include a 2-methylimine pyrrolyl ligand and/or N,N′-diisopropylformamidinato ligand. The precursors may also contain cyclopentadienyl, pentamethylcyclopentadienyl or pyrrolyl groups.
摘要翻译： 提供了使用金属配位络合物在表面上沉积基本由Co，Mn，Ru或镧系金属构成的金属膜的方法。 在该方法中使用的前体包括2-甲基亚胺吡咯基配体和/或N，N'-二异丙基甲酰胺配体。 前体还可以含有环戊二烯基，五甲基环戊二烯基或吡咯基。
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9.发明授权Heteroleptic cyclopentadienyl transition metal precursors for deposition of transition metal-containing films 有权用于沉积含过渡金属的膜的杂环戊二烯基过渡金属前体公开(公告)号：US08298616B2
公开(公告)日：2012-10-30
申请号：US12509024
申请日：2009-07-24
IPC分类号： B05D3/02
CPC分类号： C23C16/18 , C23C16/45553
摘要： Methods and compositions for depositing a film on one or more substrates include providing a reactor with at least one substrate disposed in the reactor. At least one metal precursor are provided and at least partially deposited onto the substrate to form a metal-containing film.
摘要翻译： 在一个或多个基底上沉积膜的方法和组合物包括提供反应器中设置有至少一个底物的反应器。 提供至少一种金属前体并且至少部分地沉积到基底上以形成含金属的膜。
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10.发明申请METHODS FOR SYNTHESIS OF HETEROLEPTIC CYCLOPENTADIENYL TRANSITION METAL PRECURSORS 失效合成环己基二亚甲基转移金属前体的方法公开(公告)号：US20100022790A1
公开(公告)日：2010-01-28
申请号：US12509052
申请日：2009-07-24
IPC分类号： C07F15/04
CPC分类号： C23C16/18 , C23C16/45553
摘要： Methods for forming heteroleptic amidinate or guanidinate cyclopentadienyl containing transition metal precursors through synthesis reactions.
摘要翻译： 通过合成反应形成含有杂芳基脒基或胍基环戊二烯基的过渡金属前体的方法。
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