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公开(公告)号：US20110168977A1
公开(公告)日：2011-07-14
申请号：US13009422
申请日：2011-01-19
IPC分类号： H01L33/06
CPC分类号： H01S5/34333 , B82Y20/00 , H01L33/04 , H01L33/06 , H01L33/32 , H01L2924/0002 , H01S5/0422 , H01S5/2009 , H01S5/3063 , H01S5/3213 , H01S5/3215 , H01S5/3216 , H01S5/3218 , H01L2924/00
摘要： An optoelectronic component including a semiconductor layer structure, the semiconductor layer structure including a superlattice composed of stacked layers of III-V compound semiconductors of a first and at least one second type. Adjacent layers of different types in the superlattice differ in composition with respect to at least one element, at least two layers of the same type having a different content of the at least one element, the content of the at least one element is graded within a layer of the superlattice, and the layers of the superlattice contain dopants in predefined concentrations, with the superlattice comprising layers that are doped with different dopants. In this way, the electrical, optical and epitaxial properties of the superlattice can be adapted in the best possible manner to given requirements, particularly epitaxial constraints.
摘要翻译： 一种包括半导体层结构的光电子部件，所述半导体层结构包括由第一和至少一种第二类型的III-V族化合物半导体层叠层构成的超晶格。 超晶格中不同类型的相邻层相对于至少一个元素的组成不同，至少两个相同类型的层具有至少一种元素的不同含量，至少一种元素的含量分级在 超晶格的层，并且超晶格的层含有预定浓度的掺杂剂，超晶格包含掺杂有不同掺杂剂的层。 以这种方式，超晶格的电，光学和外延特性可以以给定的要求，特别是外延约束的最佳可能方式进行调整。
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公开(公告)号：US08471240B2
公开(公告)日：2013-06-25
申请号：US13009422
申请日：2011-01-19
IPC分类号： H01L21/00
CPC分类号： H01S5/34333 , B82Y20/00 , H01L33/04 , H01L33/06 , H01L33/32 , H01L2924/0002 , H01S5/0422 , H01S5/2009 , H01S5/3063 , H01S5/3213 , H01S5/3215 , H01S5/3216 , H01S5/3218 , H01L2924/00
摘要： An optoelectronic component including a semiconductor layer structure, the semiconductor layer structure including a superlattice composed of stacked layers of III-V compound semiconductors of a first and at least one second type. Adjacent layers of different types in the superlattice differ in composition with respect to at least one element, at least two layers of the same type having a different content of the at least one element, the content of the at least one element is graded within a layer of the superlattice, and the layers of the superlattice contain dopants in predefined concentrations, with the superlattice comprising layers that are doped with different dopants. In this way, the electrical, optical and epitaxial properties of the superlattice can be adapted in the best possible manner to given requirements, particularly epitaxial constraints.
摘要翻译： 一种包括半导体层结构的光电子部件，所述半导体层结构包括由第一和至少一种第二类型的III-V族化合物半导体层叠层构成的超晶格。 超晶格中不同类型的相邻层相对于至少一个元素的组成不同，至少两个相同类型的层具有至少一种元素的不同含量，至少一种元素的含量分级在 超晶格的层，并且超晶格的层含有预定浓度的掺杂剂，超晶格包含掺杂有不同掺杂剂的层。 以这种方式，超晶格的电，光学和外延特性可以以给定的要求，特别是外延约束的最佳可能方式进行调整。
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公开(公告)号：US08022392B2
公开(公告)日：2011-09-20
申请号：US11780516
申请日：2007-07-20
IPC分类号： H01L29/06
CPC分类号： H01L33/06 , B82Y20/00 , H01L29/155 , H01L33/04 , H01L2924/0002 , H01S5/2009 , H01S5/3215 , H01S5/3216 , H01S5/34333 , H01L2924/00
摘要： The semiconductor layer structure includes an active layer and a superlattice composed of stacked layers of III-V compound semiconductors of a first and at least one second type. Adjacent layers of different types in the superlattice differ in composition with respect to at least one element. The layers have predefined layer thicknesses, such that the layer thicknesses of layers of the first type and of the layers of the second type increase from layer to layer with increasing distance from an active layer. An increasing layer thickness within the layers of the first and the second type is suitable for adapting the electrical, optical and epitaxial properties of the superlattice to given requirements in the best possible manner.
摘要翻译： 半导体层结构包括由第一和至少第二类型的III-V族化合物半导体层叠层构成的有源层和超晶格。 超晶格中不同类型的相邻层相对于至少一个元素的组成不同。 这些层具有预定的层厚度，使得第一类型的层和第二类型的层的层厚度随着与有源层的距离增加而逐层增加。 在第一和第二类型的层内增加的层厚度适合于以最佳可能方式使超晶格的电，光学和外延特性适应给定的要求。
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公开(公告)号：US20080054252A1
公开(公告)日：2008-03-06
申请号：US11780516
申请日：2007-07-20
IPC分类号： H01L29/06
CPC分类号： H01L33/06 , B82Y20/00 , H01L29/155 , H01L33/04 , H01L2924/0002 , H01S5/2009 , H01S5/3215 , H01S5/3216 , H01S5/34333 , H01L2924/00
摘要： The semiconductor layer structure includes an active layer (6) and a superlattice (9) composed of stacked layers (9a, 9b) of III-V compound semiconductors of a first (a) and at least one second type (b). Adjacent layers of different types in the superlattice (9) differ in composition with respect to at least one element. The layers (9a, 9b) have predefined layer thicknesses, such that the layer thicknesses of layers (9a) of the first type (a) and of the layers (9b) of the second type (b) increase from layer to layer with increasing distance from an active layer (6). An increasing layer thickness within the layers of the first and the second type (a, b) is suitable for adapting the electrical, optical and epitaxial properties of the superlattice (9) to given requirements in the best possible manner.
摘要翻译： 半导体层结构包括由第一（a）和至少一个第二类型（b）的III-V族化合物半导体的堆叠层（9a，9b）组成的有源层（6）和超晶格（9）。 超晶格（9）中不同类型的相邻层相对于至少一个元素的组成不同。 层（9a，9b）具有预定的层厚度，使得第一类型（a）的层（9a）和第二类型（b）的层（9b）的层的厚度从层 以增加距离有源层（6）的距离。 在第一和第二类型（a，b）的层内增加的层厚度适合于以最佳可能方式使超晶格（9）的电，光学和外延特性适应给定的要求。
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公开(公告)号：US07893424B2
公开(公告)日：2011-02-22
申请号：US11780514
申请日：2007-07-20
IPC分类号： H01L21/00
CPC分类号： H01S5/34333 , B82Y20/00 , H01L33/04 , H01L33/06 , H01L33/32 , H01L2924/0002 , H01S5/0422 , H01S5/2009 , H01S5/3063 , H01S5/3213 , H01S5/3215 , H01S5/3216 , H01S5/3218 , H01L2924/00
摘要： The semiconductor layer structure includes a superlattice composed of stacked layers of III-V compound semiconductors of a first and at least one second type. Adjacent layers of different types in the superlattice differ in composition with respect to at least one element, at least two layers of the same type have a different content of the at least one element, the content of the at least one element is graded within a layer of the superlattice, and the layers of the superlattice contain dopants in predefined concentrations, with the superlattice comprising layers that are doped with different dopants. In this way, the electrical, optical and epitaxial properties of the superlattice can be adapted in the best possible manner to given requirements, particularly epitaxial constraints.
摘要翻译： 半导体层结构包括由第一和至少一种第二类型的III-V族化合物半导体的堆叠层组成的超晶格。 超晶格中不同类型的相邻层相对于至少一个元素的组成不同，至少两个相同类型的层具有至少一个元素的不同含量，至少一个元素的含量被分级在 超晶格的层，并且超晶格的层含有预定浓度的掺杂剂，超晶格包含掺杂有不同掺杂剂的层。 以这种方式，超晶格的电，光学和外延特性可以以给定的要求，特别是外延约束的最佳可能方式进行调整。
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公开(公告)号：US20080054247A1
公开(公告)日：2008-03-06
申请号：US11780514
申请日：2007-07-20
CPC分类号： H01S5/34333 , B82Y20/00 , H01L33/04 , H01L33/06 , H01L33/32 , H01L2924/0002 , H01S5/0422 , H01S5/2009 , H01S5/3063 , H01S5/3213 , H01S5/3215 , H01S5/3216 , H01S5/3218 , H01L2924/00
摘要： The semiconductor layer structure includes a superlattice (9) composed of stacked layers (9a, 9b) of III-V compound semiconductors of a first (a) and at least one second type (b). Adjacent layers of different types in the superlattice (9) differ in composition with respect to at least one element, at least two layers of the same type have a different content (cAl, cIn) of the at least one element, the content (cAl, cIn) of the at least one element is graded within a layer (9a, 9b) of the superlattice (9), and the layers (9a, 9b) of the superlattice contain dopants in predefined concentrations, with the superlattice (9) comprising layers (9a, 9b) that are doped with different dopants. In this way, the electrical, optical and epitaxial properties of the superlattice (9) can be adapted in the best possible manner to given requirements, particularly epitaxial constraints.
摘要翻译： 半导体层结构包括由第一（a）和至少一种第二类型（b）的III-V族化合物半导体的堆叠层（9a，9b）组成的超晶格（9）。 超晶格（9）中不同类型的相邻层在组成上相对于至少一个元素不同，至少两层相同类型具有不同的含量（c 至少一个元件的内容物，（a）至少一个元素的内容（c，S，N，C）在一个层（9a， （9）的超导体（9b），并且超晶格的层（9a，9b）含有预定浓度的掺杂剂，超晶格（9）包含掺杂不同掺杂剂的层（9a，9b） 。 以这种方式，超晶格（9）的电，光学和外延特性可以以最佳可能的方式适应给定的要求，特别是外延约束。
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