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    Reticle fabrication using a removable hard mask
    2.
    发明申请
    Reticle fabrication using a removable hard mask 有权
    使用可移除的硬掩模的标线制造

    公开(公告)号：US20050170655A1

    公开(公告)日：2005-08-04

    申请号：US10768919

    申请日：2004-01-30

    申请人： Christopher Bencher ,  Melvin Montgomery ,  Alexander Buxbaum ,  Yung-Hee Lee ,  Jian Ding ,  Gilad Almogy ,  Wendy Yeh

    发明人： Christopher Bencher ,  Melvin Montgomery ,  Alexander Buxbaum ,  Yung-Hee Lee ,  Jian Ding ,  Gilad Almogy ,  Wendy Yeh

    IPC分类号： G03F1/08 ,  G03F7/09 ,  H01L21/311

    CPC分类号： G03F1/68 ,  G03F1/46 ,  G03F1/80

    摘要： We have reduced the critical dimension bias for reticle fabrication. Pattern transfer to the radiation-blocking layer of the reticle substrate essentially depends upon use of a hard mask to which the pattern is transferred from a photoresist. The photoresist pull back which occurs during pattern transfer to the hard mask is minimalized. In addition, a hard mask material having anti-reflective properties which are matched to the reflective characteristics of the radiation-blocking layer enables a reduction in critical dimension size and an improvement in the pattern feature integrity in the hard mask itself. An anti-reflective hard mask layer left on the radiation-blocking layer provides functionality when the reticle is used in a semiconductor device manufacturing process.

    摘要翻译： 我们已经减少了标线制造的临界尺寸偏差。 图案转印到掩模版基板的辐射阻挡层基本上取决于使用从光致抗蚀剂转移图案的硬掩模。 在图案转印到硬掩模期间发生的光致抗蚀剂拉回最小化。 此外，具有与防辐射层的反射特性相匹配的抗反射性能的硬掩模材料能够降低临界尺寸尺寸并改善硬掩模本身中图案特征的完整性。 当在半导体器件制造工艺中使用掩模版时，留在辐射阻挡层上的抗反射硬掩模层提供功能。

    Reticle fabrication using a removable hard mask
    3.
    发明授权
    Reticle fabrication using a removable hard mask 有权
    使用可移除的硬掩模的标线制造

    公开(公告)号：US07365014B2

    公开(公告)日：2008-04-29

    申请号：US10768919

    申请日：2004-01-30

    申请人： Christopher Dennis Bencher ,  Melvin Warren Montgomery ,  Alexander Buxbaum ,  Yung-Hee Yvette Lee ,  Jian Ding ,  Gilad Almogy ,  Wendy H. Yeh

    发明人： Christopher Dennis Bencher ,  Melvin Warren Montgomery ,  Alexander Buxbaum ,  Yung-Hee Yvette Lee ,  Jian Ding ,  Gilad Almogy ,  Wendy H. Yeh

    IPC分类号： H01L21/66 ,  H01L21/311 ,  H01L21/302 ,  H01L21/44 ,  H01L21/461

    CPC分类号： G03F1/68 ,  G03F1/46 ,  G03F1/80

    摘要： We have reduced the critical dimension bias for reticle fabrication. Pattern transfer to the radiation-blocking layer of the reticle substrate essentially depends upon use of a hard mask to which the pattern is transferred from a photoresist. The photoresist pull back which occurs during pattern transfer to the hard mask is minimalized. In addition, a hard mask material having anti-reflective properties which are matched to the reflective characteristics of the radiation-blocking layer enables a reduction in critical dimension size and an improvement in the pattern feature integrity in the hard mask itself. An anti-reflective hard mask layer left on the radiation-blocking layer provides functionality when the reticle is used in a semiconductor device manufacturing process.

    摘要翻译： 我们已经减少了标线制造的临界尺寸偏差。 图案转印到掩模版基板的辐射阻挡层基本上取决于使用从光致抗蚀剂转移图案的硬掩模。 在图案转印到硬掩模期间发生的光致抗蚀剂拉回最小化。 此外，具有与防辐射层的反射特性相匹配的抗反射性能的硬掩模材料能够降低临界尺寸尺寸，并改善硬掩模本身的图案特征完整性。 当在半导体器件制造工艺中使用掩模版时，留在辐射阻挡层上的抗反射硬掩模层提供功能。

    INTEGRATED PHASE ANGLE AND OPTICAL CRITICAL DIMENSION MEASUREMENT METROLOGY FOR FEED FORWARD AND FEEDBACK PROCESS CONTROL
    5.
    发明申请
    INTEGRATED PHASE ANGLE AND OPTICAL CRITICAL DIMENSION MEASUREMENT METROLOGY FOR FEED FORWARD AND FEEDBACK PROCESS CONTROL 审中-公开
    集成相角和光学关键尺寸测量方法进给前馈和反馈过程控制

    公开(公告)号：US20070296980A1

    公开(公告)日：2007-12-27

    申请号：US11831943

    申请日：2007-07-31

    申请人： ALFRED MAK ,  Yung-Hee Lee ,  Cynthia Brooks ,  Melisa Buie ,  Turgut Sahin ,  Jian Ding

    发明人： ALFRED MAK ,  Yung-Hee Lee ,  Cynthia Brooks ,  Melisa Buie ,  Turgut Sahin ,  Jian Ding

    IPC分类号： G01B11/14

    CPC分类号： G03F1/32 ,  G03F1/30

    摘要： Methods and apparatus for controlling the critical dimensions and monitoring the phase shift angles of photomasks. Critical dimensions measurement data before wafer processing and after wafer processing are collected by an integrated metrology tool to adjust the process recipe, to determine if the critical dimensions are in specification and to determine if additional etching is required. Phase shift angle and uniformity across substrate measurement after wafer processing are collected by an integrated metrology tool to determine if the phase shift angle and its uniformity are in specification. The real time process recipe adjustment and determination if additional etching is requires allow tightening of the process control. The phase shift angle and uniformity monitoring allows in-line screening of phase shift photomasks.

    摘要翻译： 用于控制关键尺寸和监测光掩模相移角的方法和装置。 晶圆处理之前和晶片处理后的关键尺寸测量数据由集成计量工具收集，以调整工艺配方，以确定临界尺寸是否在规范中，并确定是否需要额外的蚀刻。 晶圆处理后的基板测量的相移角和均匀度由集成计量工具收集，以确定相移角及其均匀性是否在规范中。 如果需要额外的蚀刻，则实时处理配方调整和确定允许过程控制的紧固。 相移角和均匀性监测允许在线筛选相移光掩模。

    PROCESS FOR ETCHING A METAL LAYER SUITABLE FOR USE IN PHOTOMASK FABRICATION
    6.
    发明申请
    PROCESS FOR ETCHING A METAL LAYER SUITABLE FOR USE IN PHOTOMASK FABRICATION 有权
    用于蚀刻适用于光电制造的金属层的工艺

    公开(公告)号：US20070105381A1

    公开(公告)日：2007-05-10

    申请号：US11616990

    申请日：2006-12-28

    申请人： Madhavi Chandrachood ,  Nicole Sandlin ,  Yung-Hee Lee ,  Jian Ding

    发明人： Madhavi Chandrachood ,  Nicole Sandlin ,  Yung-Hee Lee ,  Jian Ding

    IPC分类号： H01L21/302

    CPC分类号： C03C17/06 ,  C03C2217/26 ,  C03C2218/33 ,  C03C2218/34 ,  C23F4/00 ,  G03F1/54 ,  G03F1/80 ,  H01J37/321 ,  H01J2237/3341

    摘要： Method and apparatus for etching a metal layer disposed on a substrate, such as a photolithographic reticle, are provided. In one aspect, a method is provided for processing a substrate including positioning a substrate having a metal layer disposed on an optically transparent material in a processing chamber, introducing a processing gas processing gas comprising an oxygen containing gas, a chlorine containing gas, and a chlorine-free halogen containing gas, and optionally, an inert gas, into the processing chamber, generating a plasma of the processing gas in the processing chamber, and etching exposed portions of the metal layer disposed on the substrate.

    摘要翻译： 提供了用于蚀刻设置在诸如光刻掩模之类的基板上的金属层的方法和设备。 一方面，提供了一种处理基板的方法，包括：将具有设置在处理室中的光学透明材料上的金属层的基板定位，引入包含含氧气体，含氯气体和 将含氯气体的无卤素气体和任选的惰性气体加入到处理室中，在处理室中产生处理气体的等离子体，并蚀刻设置在基板上的金属层的暴露部分。

    Integrated phase angle and optical critical dimension measurement metrology for feed forward and feedback process control
    7.
    发明申请
    Integrated phase angle and optical critical dimension measurement metrology for feed forward and feedback process control 有权
    用于前馈和反馈过程控制的集成相位角和光学关键尺寸测量计量

    公开(公告)号：US20050153564A1

    公开(公告)日：2005-07-14

    申请号：US10754321

    申请日：2004-01-09

    申请人： Alfred Mak ,  Yung-Hee Lee ,  Cynthia Brooks ,  Melisa Buie ,  Turgut Sahin ,  Jian Ding

    发明人： Alfred Mak ,  Yung-Hee Lee ,  Cynthia Brooks ,  Melisa Buie ,  Turgut Sahin ,  Jian Ding

    IPC分类号： G03F1/00 ,  H01L21/302 ,  H01L21/461

    CPC分类号： G03F1/32 ,  G03F1/30

    摘要： Methods and apparatus for controlling the critical dimensions and monitoring the phase shift angles of photomasks. Critical dimensions measurement data before wafer processing and after wafer processing are collected by an integrated metrology tool to adjust the process recipe, to determine if the critical dimensions are in specification and to determine if additional etching is required. Phase shift angle and uniformity across substrate measurement after wafer processing are collected by an integrated metrology tool to determine if the phase shift angle and its uniformity are in specification. The real time process recipe adjustment and determination if additional etching is requires allow tightening of the process control. The phase shift angle and uniformity monitoring allows in-line screening of phase shift photomasks.

    摘要翻译： 用于控制关键尺寸和监测光掩模相移角的方法和装置。 晶圆处理之前和晶片处理后的关键尺寸测量数据由集成计量工具收集，以调整工艺配方，以确定临界尺寸是否在规范中，并确定是否需要额外的蚀刻。 晶圆处理后的基板测量的相移角和均匀度由集成计量工具收集，以确定相移角及其均匀性是否在规范中。 如果需要额外的蚀刻，则实时处理配方调整和确定允许过程控制的紧固。 相移角和均匀性监测允许在线筛选相移光掩模。

    Process for etching photomasks
    8.
    发明申请
    Process for etching photomasks 有权
    蚀刻光掩模的工艺

    公开(公告)号：US20070184354A1

    公开(公告)日：2007-08-09

    申请号：US10925887

    申请日：2004-08-25

    申请人： Madhavi Chandrachood ,  Nicole Sandlin ,  Yung-Hee Lee ,  Jian Ding

    发明人： Madhavi Chandrachood ,  Nicole Sandlin ,  Yung-Hee Lee ,  Jian Ding

    IPC分类号： C03C25/68 ,  B44C1/22 ,  H01L21/461 ,  C03C15/00 ,  C23F1/00 ,  H01L21/302 ,  C25F3/00 ,  G03F1/00

    CPC分类号： C03C17/06 ,  C03C2217/26 ,  C03C2218/33 ,  C03C2218/34 ,  C23F4/00 ,  G03F1/54 ,  G03F1/80 ,  H01J37/321 ,  H01J2237/3341

    摘要： Method and apparatus for etching a metal layer disposed on a substrate, such as a photolithographic reticle, are provided. In one aspect, a method is provided for processing a substrate including positioning a substrate having a metal layer disposed on an optically transparent material in a processing chamber, introducing a processing gas processing gas comprising an oxygen containing gas, a chlorine containing gas, and a chlorine-free halogen containing gas, and optionally, an inert gas, into the processing chamber, generating a plasma of the processing gas in the processing chamber, and etching exposed portions of the metal layer disposed on the substrate.

    摘要翻译： 提供了用于蚀刻设置在诸如光刻掩模之类的基板上的金属层的方法和设备。 一方面，提供了一种处理基板的方法，包括：将具有设置在处理室中的光学透明材料上的金属层的基板定位，引入包含含氧气体，含氯气体和 将含氯气体的无卤素气体和任选的惰性气体加入到处理室中，在处理室中产生处理气体的等离子体，并蚀刻设置在基板上的金属层的暴露部分。