CALIBRATION OF LITHOGRAPHIC PROCESS MODELS
    2.
    发明申请
    CALIBRATION OF LITHOGRAPHIC PROCESS MODELS 失效
    光刻过程模型的校准

    公开(公告)号:US20100171031A1

    公开(公告)日:2010-07-08

    申请号:US12349223

    申请日:2009-01-06

    IPC分类号: G01D18/00

    CPC分类号: G03F7/70441 G03F7/705

    摘要: A method is provided for calibrating a model of a lithographic process that includes defining a parameter space of lithographic model parameters that are expected in an integrated circuit layout. The parameter space is defined according to bin values of a lithographic model parameter that span the range from a predetermined minimum and maximum value of the model parameter. The bin values may be incremented uniformly between the maximum and minimum parameter values, or may be distributed according to a weighting. The lithographic model is calibrated to an initial calibration test pattern. The resulting simulated calibration pattern is evaluated to determine whether the model parameter space is adequately populated. If the parameter space is over or under populated, the calibration pattern is modified until the calibration pattern test values adequately populate the parameter space, so that the final calibrated lithographic process model will more reliably predict images over the full range of image parameters.

    摘要翻译: 提供了一种用于校准光刻工艺的模型的方法,该方法包括定义在集成电路布局中期望的光刻模型参数的参数空间。 参数空间根据距离模型参数的预定最小值和最大值的范围的光刻模型参数的二进制值定义。 二进制值可以在最大和最小参数值之间均匀递增,也可以根据权重分配。 光刻模型被校准为初始校准测试图案。 评估所得到的模拟校准模式以确定模型参数空间是否被充分填充。 如果参数空间超过或不足,校准模式将被修改,直到校准模式测试值充分填充参数空间,以便最终校准的光刻过程模型将更可靠地在图像参数的全范围内预测图像。

    Calibration of lithographic process models
    5.
    发明授权
    Calibration of lithographic process models 失效
    光刻工艺模型的校准

    公开(公告)号:US08174681B2

    公开(公告)日:2012-05-08

    申请号:US12349223

    申请日:2009-01-06

    IPC分类号: G03B27/32 G01D18/00

    CPC分类号: G03F7/70441 G03F7/705

    摘要: A method is provided for calibrating a model of a lithographic process that includes defining a parameter space of lithographic model parameters that are expected in an integrated circuit layout. The parameter space is defined according to bin values of a lithographic model parameter that span the range from a predetermined minimum and maximum value of the model parameter. The bin values may be incremented uniformly between the maximum and minimum parameter values, or may be distributed according to a weighting. The lithographic model is calibrated to an initial calibration test pattern. The resulting simulated calibration pattern is evaluated to determine whether the model parameter space is adequately populated. If the parameter space is over or under populated, the calibration pattern is modified until the calibration pattern test values adequately populate the parameter space, so that the final calibrated lithographic process model will more reliably predict images over the full range of image parameters.

    摘要翻译: 提供了一种用于校准光刻工艺的模型的方法,该方法包括定义在集成电路布局中期望的光刻模型参数的参数空间。 参数空间根据距离模型参数的预定最小值和最大值的范围的光刻模型参数的二进制值定义。 二进制值可以在最大和最小参数值之间均匀递增,也可以根据权重分配。 光刻模型被校准为初始校准测试图案。 评估所得到的模拟校准模式以确定模型参数空间是否被充分填充。 如果参数空间超过或不足,校准模式将被修改,直到校准模式测试值充分填充参数空间,以便最终校准的光刻过程模型将在图像参数的全范围内更可靠地预测图像。