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公开(公告)号：US5528103A
公开(公告)日：1996-06-18
申请号：US188855
申请日：1994-01-31
CPC分类号： H01J3/022 , H01J29/085 , H01J31/127
摘要： A gated field-emission structure contains a emitter electrode (46), an overlying electrically insulating layer (48, and one or more electron-emissive elements (52) situated in one or more apertures extending through the insulating layer. A patterned gate electrode (50) through which each electron-emissive element is exposed overlies the insulating layer. Focusing ridges (54) are situated on the insulating layer on opposite sides of the gate electrode. The focusing ridges, which normally extend to a considerably greater height than the gate electrode, cause emitted electrons to converge into a narrow band.
摘要翻译： 门控场致发射结构包含发射极电极（46），覆盖电绝缘层（48）和位于延伸穿过绝缘层的一个或多个孔隙中的一个或多个电子发射元件（52） 每个电子发射元件通过其暴露在绝缘层上方，聚焦脊（54）位于栅电极相对侧上的绝缘层上，该聚焦脊通常延伸到比栅极大得多的高度 电极，使发射的电子收敛成窄带。
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2.发明授权Structure and fabrication of gated electron-emitting device having electron optics to reduce electron-beam divergence 失效具有电子光学器件的门控电子发射器件的结构和制造以减少电子束发散
公开(公告)号：US5552659A
公开(公告)日：1996-09-03
申请号：US269312
申请日：1994-06-29
CPC分类号： H01J3/022 , H01J2201/30403 , H01J2201/30457 , H01J2329/00
摘要： An electron emitter contains a gate layer (38), an underlying dielectric layer (36), an intermediate non-insulating layer (34) situated below the dielectric layer, and a lower non-insulating region (32) situated below the intermediate non-insulating layer. A multiplicity of electron-emissive particles (42) are situated over the non-insulating region at the bottom of an opening (40) extending through the three layers. The ratio of the thickness of the dielectric layer to the thickness of the intermediate non-insulating layer is in the range of 1:1 to 4:1, while the ratio of the mean diameter of the opening to the thickness of the intermediate non-insulating layer is in the range 1:1 to 10:1. The presence of the intermediate non-insulating layer improves the collimation of the beam of electrons emitted from the electron-emissive elements. The electron emitter is manufactured according to a simple, readily controllable process.
摘要翻译： 电子发射器包括栅极层（38），下面的介电层（36），位于电介质层下面的中间非绝缘层（34）和位于中间非绝缘层下面的下部非绝缘区域（32） 绝缘层。 多个电子发射颗粒（42）位于延伸穿过三层的开口（40）底部的非绝缘区域的上方。 介电层的厚度与中间非绝缘层的厚度之比在1：1至4：1的范围内，而开口的平均直径与中间非绝缘层的厚度之比 绝缘层的范围为1：1至10：1。 中间非绝缘层的存在改善了从电子发射元件发射的电子束的准直。 电子发射器是根据简单易操控制造的。
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