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1.发明申请公开(公告)号：US20100229372A1
公开(公告)日：2010-09-16
申请号：US12786405
申请日：2010-05-24
IPC分类号： H05K13/00
CPC分类号： H01J37/32431 , H01J37/32935 , H05H1/0081 , Y10T29/49002
摘要： Methods using a probe apparatus configured to measure a set of electrical characteristics in a plasma include providing a chamber wall including at least a set of plasma chamber surfaces configured to be exposed to a plasma, the plasma having a set of electrical characteristics. The method includes installing a collection disk structure configured to be exposed to the plasma, wherein the collection disk structure having at least a body disposed within the chamber wall and a collection disk structure surface that is either coplanar or recessed with at least one of the set of plasma chamber surfaces and providing a conductive path configured to transmit the set of electrical characteristics from the collection disk structure to a set of transducers. The method may includes coupling a thermal grounding element with the conductive path for providing thermal grounding to at least the conductive path and may alternatively or additionally include disposing an insulation barrier configured to substantially electrically separate at least one of the collection disk and the conductive path.
摘要翻译： 使用构造成测量等离子体中的一组电特性的探针装置的方法包括提供包括至少一组被配置为暴露于等离子体的等离子体室表面的室壁，所述等离子体具有一组电特性。 该方法包括安装被配置为暴露于等离子体的收集盘结构，其中所述收集盘结构具有至少一个设置在所述室壁内的主体和与所述集合中的至少一个共面或凹入的收集盘结构表面 的等离子体室表面，并且提供导电路径，其被配置为将所述一组电特性从所述收集盘结构传输到一组换能器。 该方法可以包括将热接地元件与导电路径耦合，以便至少提供导电路径的热接地，并且可替代地或另外地包括设置绝缘屏障，该隔离屏障构造成基本上电分离收集盘和导电路径中的至少一个。
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2.发明授权公开(公告)号：US07319316B2
公开(公告)日：2008-01-15
申请号：US11172014
申请日：2005-06-29
IPC分类号： C02F1/00
CPC分类号： H01J37/32431 , H01J37/32935 , H05H1/0081 , Y10T29/49002
摘要： A probe apparatus configured to measure a set of electrical characteristics in a plasma processing chamber, the plasma processing chamber including a set of plasma chamber surfaces configured to be exposed to a plasma is disclosed. The probe apparatus includes a collection disk structure configured to be exposed to the plasma, whereby the collection disk structure is coplanar with at least one of the set of plasma chamber surfaces. The probe apparatus also includes a conductive path configured to transmit the set of electrical characteristics from the collection disk structure to a set of transducers, wherein the set of electrical characteristics is generated by an ion flux of the plasma. The probe apparatus further includes an insulation barrier configured to substantially electrically separate the collection disk and the conductive path from the set of plasma chamber surfaces.
摘要翻译： 公开了一种被配置为测量等离子体处理室中的一组电特性的探针装置，所述等离子体处理室包括被配置为暴露于等离子体的一组等离子体室表面。 探针装置包括构造成暴露于等离子体的收集盘结构，由此收集盘结构与等离子体腔表面中的至少一个共面。 探针装置还包括导电路径，该导电路径被配置为将该组特征从收集盘结构发送到一组换能器，其中该组电特性由等离子体的离子通量产生。 探针装置还包括绝缘屏障，其被配置为基本上将采集盘和导电路径与该组等离子体腔表面电分离。
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公开(公告)号：US07994794B2
公开(公告)日：2011-08-09
申请号：US12786405
申请日：2010-05-24
CPC分类号： H01J37/32431 , H01J37/32935 , H05H1/0081 , Y10T29/49002
摘要： Methods using a probe apparatus configured to measure a set of electrical characteristics in a plasma include providing a chamber wall including at least a set of plasma chamber surfaces configured to be exposed to a plasma, the plasma having a set of electrical characteristics. The method includes installing a collection disk structure configured to be exposed to the plasma, wherein the collection disk structure having at least a body disposed within the chamber wall and a collection disk structure surface that is either coplanar or recessed with at least one of the set of plasma chamber surfaces and providing a conductive path configured to transmit the set of electrical characteristics from the collection disk structure to a set of transducers. The method may include coupling a thermal grounding element with the conductive path for providing thermal grounding to at least the conductive path and may alternatively or additionally include disposing an insulation barrier configured to substantially electrically separate at least one of the collection disk and the conductive path.
摘要翻译： 使用构造成测量等离子体中的一组电特性的探针装置的方法包括提供包括至少一组被配置为暴露于等离子体的等离子体室表面的室壁，所述等离子体具有一组电特性。 该方法包括安装被配置为暴露于等离子体的收集盘结构，其中所述收集盘结构具有至少一个设置在所述室壁内的主体和与所述集合中的至少一个共面或凹入的收集盘结构表面 的等离子体室表面，并且提供导电路径，其被配置为将所述一组电特性从所述收集盘结构传输到一组换能器。 该方法可以包括将热接地元件与导电路径耦合，以便至少提供导电路径的热接地，并且可替代地或另外地包括设置绝缘屏障，该隔离屏障构造成基本上电分离收集盘和导电路径中的至少一个。
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公开(公告)号：US07479207B2
公开(公告)日：2009-01-20
申请号：US11377074
申请日：2006-03-15
IPC分类号： C23F1/02
CPC分类号： H01J37/32935
摘要： A plasma probe assembly for use in a plasma processing chamber is provided. A semiconductor probe element with a probe surface at a first end of the semiconductor probe element is provided. An electrical connector is electrically connected to the semiconductor probe element. An electrically insulating sleeve surrounds at least part of the probe element. An adjustment device is connected to the semiconductor probe so that the probe surface is coplanar with an interior chamber surface of the plasma processing chamber.
摘要翻译： 提供了一种用于等离子体处理室的等离子体探针组件。 提供了在半导体探针元件的第一端具有探针表面的半导体探针元件。 电连接器电连接到半导体探针元件。 电绝缘套管围绕探头元件的至少一部分。 调整装置连接到半导体探针，使得探针表面与等离子体处理室的内部腔室表面共面。
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5.发明申请Plasma processing chamber with an apparatus for measuring set of electrical characteristics in a plasma 有权等离子体处理室，其具有用于测量等离子体中的电特性的装置公开(公告)号：US20080066861A1
公开(公告)日：2008-03-20
申请号：US11948926
申请日：2007-11-30
IPC分类号： C23F1/00 , C23C16/448
CPC分类号： H01J37/32431 , H01J37/32935 , H05H1/0081 , Y10T29/49002
摘要： A probe apparatus configured to measure a set of electrical characteristics in a plasma processing chamber, the plasma processing chamber including a set of plasma chamber surfaces configured to be exposed to a plasma is disclosed. Tile probe apparatus includes a collection disk structure configured to be exposed to the plasma, whereby the collection disk stricture is coplanar with at least one of the set of plasma chamber surfaces. The probe apparatus also includes a conductive path configured to transmit the set of electrical characteristics from the collection disk structure to a set of transducers, wherein the set of electrical characteristics is generated by an ion flux of the plasma. The probe apparatus further includes an insulation barrier configured to substantially electrically separate the collection disk and the conductive path from the set of plasma chamber surfaces.
摘要翻译： 公开了一种被配置为测量等离子体处理室中的一组电特性的探针装置，所述等离子体处理室包括被配置为暴露于等离子体的一组等离子体室表面。 平铺探针装置包括构造成暴露于等离子体的收集盘结构，由此收集盘狭窄与所述一组等离子体腔表面中的至少一个共面。 探针装置还包括导电路径，该导电路径被配置为将该组特征从收集盘结构发送到一组换能器，其中该组电特性由等离子体的离子通量产生。 探针装置还包括绝缘屏障，其被配置为基本上将采集盘和导电路径与该组等离子体腔表面电分离。
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公开(公告)号：US20070215285A1
公开(公告)日：2007-09-20
申请号：US11377074
申请日：2006-03-15
IPC分类号： C23F1/00
CPC分类号： H01J37/32935
摘要： A plasma probe assembly for use in a plasma processing chamber is provided. A semiconductor probe element with a probe surface at a first end of the semiconductor probe element is provided. An electrical connector is electrically connected to the semiconductor probe element. An electrically insulating sleeve surrounds at least part of the probe element. An adjustment device is connected to the semiconductor probe so that the probe surface is coplanar with an interior chamber surface of the plasma processing chamber.
摘要翻译： 提供了一种用于等离子体处理室的等离子体探针组件。 提供了在半导体探针元件的第一端具有探针表面的半导体探针元件。 电连接器电连接到半导体探针元件。 电绝缘套管围绕探头元件的至少一部分。 调整装置连接到半导体探针，使得探针表面与等离子体处理室的内部腔室表面共面。
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7.发明申请公开(公告)号：US20070000843A1
公开(公告)日：2007-01-04
申请号：US11172014
申请日：2005-06-29
IPC分类号： C02F1/00
CPC分类号： H01J37/32431 , H01J37/32935 , H05H1/0081 , Y10T29/49002
摘要： A probe apparatus configured to measure a set of electrical characteristics in a plasma processing chamber, the plasma processing chamber including a set of plasma chamber surfaces configured to be exposed to a plasma is disclosed. The probe apparatus includes a collection disk structure configured to be exposed to the plasma, whereby the collection disk structure is coplanar with at least one of the set of plasma chamber surfaces. The probe apparatus also includes a conductive path configured to transmit the set of electrical characteristics from the collection disk structure to a set of transducers, wherein the set of electrical characteristics is generated by an ion flux of the plasma. The probe apparatus further includes an insulation barrier configured to substantially electrically separate the collection disk and the conductive path from the set of plasma chamber surfaces.
摘要翻译： 公开了一种被配置为测量等离子体处理室中的一组电特性的探针装置，所述等离子体处理室包括被配置为暴露于等离子体的一组等离子体室表面。 探针装置包括构造成暴露于等离子体的收集盘结构，由此收集盘结构与等离子体腔表面中的至少一个共面。 探针装置还包括导电路径，该导电路径被配置为将该组特征从收集盘结构发送到一组换能器，其中该组电特性由等离子体的离子通量产生。 探针装置还包括绝缘屏障，其被配置为基本上将采集盘和导电路径与该组等离子体腔表面电分离。
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公开(公告)号：US07867355B2
公开(公告)日：2011-01-11
申请号：US12333209
申请日：2008-12-11
CPC分类号： H01J37/32935
摘要： A plasma probe assembly for use in a plasma processing chamber is provided. A semiconductor probe element with a probe surface at a first end of the semiconductor probe element is provided. An electrical connector is electrically connected to the semiconductor probe element. An electrically insulating sleeve surrounds at least part of the probe element. An adjustment device is connected to the semiconductor probe so that the probe surface is coplanar with an interior chamber surface of the plasma processing chamber.
摘要翻译： 提供了一种用于等离子体处理室的等离子体探针组件。 提供了在半导体探针元件的第一端具有探针表面的半导体探针元件。 电连接器电连接到半导体探针元件。 电绝缘套管围绕探头元件的至少一部分。 调整装置连接到半导体探针，使得探针表面与等离子体处理室的内部腔室表面共面。
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9.发明授权Plasma processing chamber with an apparatus for measuring a set of electrical characteristics in a plasma 有权等离子体处理室，其具有用于测量等离子体中的一组电特性的装置公开(公告)号：US07723994B2
公开(公告)日：2010-05-25
申请号：US11948926
申请日：2007-11-30
CPC分类号： H01J37/32431 , H01J37/32935 , H05H1/0081 , Y10T29/49002
摘要： A plasma processing chamber with a probe apparatus configured to measure a set of electrical characteristics in a plasma is disclosed. The plasma processing chamber includes a set of plasma chamber surfaces configured to be exposed to the plasma. The probe apparatus includes a collection disk structure configured to be exposed to the plasma, whereby the collection disk structure is coplanar with at least one of the set of plasma chamber surfaces. The probe apparatus also includes a conductive path configured to transmit the set of electrical characteristics from the collection disk structure to a set of transducers.
摘要翻译： 公开了一种具有配置成测量等离子体中的一组电特性的探针装置的等离子体处理室。 等离子体处理室包括被配置为暴露于等离子体的一组等离子体室表面。 探针装置包括构造成暴露于等离子体的收集盘结构，由此收集盘结构与等离子体腔表面中的至少一个共面。 探针装置还包括导电路径，该导电路径被配置为将该组特征从收集盘结构传送到一组换能器。
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10.发明授权Methods and apparatus for determining the endpoint of a cleaning or conditioning process in a plasma processing system 失效用于确定等离子体处理系统中的清洁或调节过程的终点的方法和装置公开(公告)号：US07578301B2
公开(公告)日：2009-08-25
申请号：US11092737
申请日：2005-03-28
申请人： Eric Hudson , Douglas Keil , Alexei Marakhtanov
发明人： Eric Hudson , Douglas Keil , Alexei Marakhtanov
CPC分类号： H01J37/32963 , H01J37/32935
摘要： A method of determining an endpoint of a process by measuring a thickness of a layer, the layer being deposited on the surface by a prior process is disclosed. The method includes providing a sensor that is coplanar with the surface, wherein the sensor is configured to measure the thickness. The method also includes exposing the plasma chamber to a plasma, wherein the thickness is changed by the exposing, and determining the thickness as a function of time. The method further includes ascertaining a steady state condition in the thickness, the steady state condition being characterized by a substantially stable measurement of the thickness, a start of the steady state condition representing the endpoint.
摘要翻译： 公开了一种通过测量层的厚度来确定工艺的端点的方法，该层通过先前的工艺沉积在表面上。 该方法包括提供与表面共面的传感器，其中传感器被配置成测量厚度。 该方法还包括将等离子体室暴露于等离子体，其中通过曝光来改变厚度，并且确定作为时间的函数的厚度。 该方法还包括确定厚度中的稳定状态条件，稳态条件的特征在于厚度的基本上稳定的测量，表示端点的稳态条件的开始。
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