公开(公告)号：US10224182B2

公开(公告)日：2019-03-05

申请号：US13303386

申请日：2011-11-23

申请人： Douglas Keil ,  Edward Augustyniak ,  Karl Leeser ,  Mohamed Sabri

发明人： Douglas Keil ,  Edward Augustyniak ,  Karl Leeser ,  Mohamed Sabri

IPC分类号： H01J37/32

摘要： A system for reducing parasitic plasma in a semiconductor process comprises a first surface and a plurality of dielectric layers that are arranged between an electrode and the first surface. The first surface and the electrode have substantially different electrical potentials. The plurality of dielectric layers defines a first gap between the electrode and one of the plurality of dielectric layers, a second gap between adjacent ones of the plurality of dielectric layers, and a third gap between a last one of the plurality of dielectric layers and the first surface. A number of the plurality of dielectric layers and sizes of the first gap, the second gap and the third gap are selected to prevent parasitic plasma between the first surface and the electrode during the semiconductor process.

公开(公告)号：US09153421B2

公开(公告)日：2015-10-06

申请号：US13470187

申请日：2012-05-11

申请人： Jean-Paul Booth ,  Mikio Nagai ,  Douglas Keil

发明人： Jean-Paul Booth ,  Mikio Nagai ,  Douglas Keil

IPC分类号： G01R31/00 ,  H01J37/32

CPC分类号： H01J37/32935

摘要： A method for detecting plasma instability within a processing chamber of a plasma processing system during substrate processing is provided. The method includes collecting a set of process data, the process data including a set of induced current signals flowing through a measuring capacitor. The method further includes converting the set of induced current signals into a set of analog voltage signals and converting the set of analog voltage signals into a set of digital signals. The method also includes analyzing the set of digital signals to detect high frequency perturbations, the high frequency perturbations indicating the plasma instability.

摘要翻译： 提供了一种用于在衬底处理期间检测等离子体处理系统的处理室内的等离子体不稳定性的方法。 该方法包括收集一组过程数据，该过程数据包括一组流过测量电容器的感应电流信号。 该方法还包括将感应电流信号集合转换为一组模拟电压信号，并将该组模拟电压信号转换成一组数字信号。 该方法还包括分析数字信号的集合以检测高频扰动，高频扰动表示等离子体不稳定性。

公开(公告)号：US08164353B2

公开(公告)日：2012-04-24

申请号：US12498955

申请日：2009-07-07

申请人： Jean-Paul Booth ,  Luc Albarede ,  Jung Kim ,  Douglas Keil

发明人： Jean-Paul Booth ,  Luc Albarede ,  Jung Kim ,  Douglas Keil

IPC分类号： G01R27/26 ,  G01R31/08

CPC分类号： H01J37/32935 ,  H01L21/67069 ,  H01L22/14 ,  Y10T29/49004

摘要： A method for characterizing deposited film on a substrate within a processing chamber during processing is provided. The method includes determining voltage-current characteristic for a probe head when measuring capacitor is set at a first capacitance value. The method also includes applying RF train to the probe head when measuring capacitor is set at a capacitance value greater than first capacitance value. The method further includes providing an initial resistance value and an initial capacitance value for the deposited film. The method yet also includes employing initial resistance value, initial capacitance value, and voltage-current characteristic to generate simulated voltage-time curve. The method yet further includes determining measured voltage-time curve, which represents potential drop across the deposited film for one RF train. The method more over includes comparing the two curves. If the difference is less than predefined threshold, employ initial resistance value and initial capacitance for characterizing the deposited film.

摘要翻译： 提供了一种在处理期间在处理室内的基板上表征沉积膜的方法。 该方法包括当测量电容器被设置在第一电容值时确定探头的电压 - 电流特性。 该方法还包括当测量电容器被设置为大于第一电容值的电容值时，将RF串施加到探头。 该方法还包括为沉积膜提供初始电阻值和初始电容值。 该方法还包括采用初始电阻值，初始电容值和电压 - 电流特性来产生模拟电压 - 时间曲线。 该方法还包括确定测量的电压时间曲线，其表示用于一个RF火车的沉积膜的电位降。 更多的方法包括比较两条曲线。 如果差值小于预定阈值，则使用初始电阻值和初始电容来表征沉积膜。

公开(公告)号：US20100007337A1

公开(公告)日：2010-01-14

申请号：US12498940

申请日：2009-07-07

申请人： Jean-Paul Booth ,  Douglas Keil

发明人： Jean-Paul Booth ,  Douglas Keil

IPC分类号： G01R1/06

CPC分类号： G01R19/0061 ,  H01J37/32541 ,  H01J37/32577 ,  H01J37/32935

摘要： An arrangement for measuring process parameters within a processing chamber is provided. The arrangement includes a probe arrangement disposed in an opening of an upper electrode. Probe arrangement includes a probe head, which includes a head portion and a flange portion. The arrangement also includes an o-ring disposed between the upper electrode and the flange portion. The arrangement further includes a spacer made of an electrically insulative material positioned between the head portion and the opening of the upper electrode to prevent the probe arrangement from touching the upper electrode. The spacer includes a disk portion configured for supporting an underside of the flange portion. The spacer also includes a hollow cylindrical portion configured to encircle the head portion. The spacer forms a right-angled path between the o-ring and an opening to the processing chamber to prevent direct line-of-sight path between the o-ring and the opening to the processing chamber.

摘要翻译： 提供了一种用于测量处理室内的工艺参数的装置。 该装置包括设置在上电极的开口中的探针装置。 探头装置包括探头，其包括头部和凸缘部分。 该布置还包括设置在上电极和凸缘部分之间的O形环。 该布置还包括由电绝缘材料制成的隔离物，该隔离物位于头部和上电极的开口之间，以防止探针装置接触上电极。 间隔件包括构造成用于支撑凸缘部分的下侧的盘部分。 间隔件还包括构造成环绕头部的中空圆柱形部分。 间隔件在O形环和处理室的开口之间形成直角路径，以防止O形环和处理室的开口之间的直接视线路径。

公开(公告)号：US20090277584A1

公开(公告)日：2009-11-12

申请号：US12504833

申请日：2009-07-17

申请人： Eric Hudson ,  Douglas Keil ,  Alexei Marakhtanov

发明人： Eric Hudson ,  Douglas Keil ,  Alexei Marakhtanov

IPC分类号： C23F1/08

CPC分类号： H01J37/32963 ,  H01J37/32935

摘要： An apparatus for determining an endpoint of a process by measuring a thickness of a layer is provided. The layer is disposed on the surface by a prior process. The apparatus includes means for providing a sensor that is coplanar with the surface, wherein the sensor is configured to measure the thickness. The apparatus also includes means for exposing the plasma chamber to a plasma, wherein the thickness is changed by the exposing, and means for determining the thickness as a function of time. The apparatus further includes means for ascertaining a steady state condition in the thickness, the steady state condition being characterized by a substantially stable measurement of the thickness, a start of the steady state condition representing the endpoint.

摘要翻译： 提供了一种通过测量层的厚度来确定工艺的端点的装置。 该层通过先前的工艺设置在表面上。 该装置包括用于提供与表面共面的传感器的装置，其中传感器被配置成测量厚度。 该装置还包括用于将等离子体室暴露于等离子体的装置，其中通过曝光改变厚度，以及用于确定作为时间的函数的厚度的装置。 该装置还包括用于确定厚度中的稳态条件的装置，稳态条件的特征在于厚度的基本上稳定的测量，表示端点的稳态条件的开始。

公开(公告)号：US09129779B2

公开(公告)日：2015-09-08

申请号：US13441187

申请日：2012-04-06

申请人： Jean-Paul Booth ,  Douglas Keil

发明人： Jean-Paul Booth ,  Douglas Keil

IPC分类号： G01R27/26 ,  H01H9/50 ,  B23K9/00 ,  H01J37/32 ,  G01R31/34 ,  G01D5/24 ,  H02H1/00 ,  G01R31/12 ,  H02H3/44

CPC分类号： H01J37/3299 ,  G01D5/24 ,  G01R27/2605 ,  G01R31/1272 ,  G01R31/34 ,  G01R31/343 ,  H01J37/32935 ,  H02H1/0015 ,  H02H3/44

摘要： A processing system for detecting in-situ arcing events during substrate processing is provided. The processing systems includes at least a plasma processing chamber having a probe arrangement, wherein the probe arrangement is disposed on a surface of the processing chamber and is configured to measure at least one plasma processing parameter. The probe arrangement includes a plasma-facing sensor and a measuring capacitor, wherein the plasma-facing sensor is coupled to a first plate of the measuring capacitor. The probe arrangement also includes a detection arrangement that is coupled to a second plate of the measuring capacitor, wherein the detection arrangement is configured for converting an induced current flowing through the measuring capacitor into a set of digital signals, which is processed to detect the in-situ arcing events.

摘要翻译： 提供了一种用于在衬底处理期间检测原位电弧事件的处理系统。 所述处理系统至少包括具有探针装置的等离子体处理室，其中所述探针装置设置在所述处理室的表面上，并且被配置成测量至少一个等离子体处理参数。 探针装置包括等离子体面向传感器和测量电容器，其中等离子体面向传感器耦合到测量电容器的第一板。 探针装置还包括耦合到测量电容器的第二板的检测装置，其中检测装置被配置为将流过测量电容器的感应电流转换成一组数字信号，该组数字信号被处理以检测在 电击事件。

公开(公告)号：US08849585B2

公开(公告)日：2014-09-30

申请号：US12477007

申请日：2009-06-02

申请人： Douglas Keil ,  Jean-Paul Booth ,  Christopher Thorgrimsson

发明人： Douglas Keil ,  Jean-Paul Booth ,  Christopher Thorgrimsson

IPC分类号： G01N31/00 ,  G01R27/26 ,  H01J37/32

CPC分类号： H01J37/32935 ,  H01J37/32091 ,  H01J37/32146 ,  H01J37/32926 ,  H01J37/32954 ,  H01J2237/244 ,  H01J2237/24564 ,  H01J2237/327 ,  H01L21/263

摘要： A method for automatically characterizing plasma during substrate processing is provided. The method includes collecting a set of process data, which includes at least data about current and voltage. The method also includes identifying a relevancy range for the set of process data, wherein the relevancy range includes a subset of the set of process data. The method further includes determining a set of seed values. The method yet also includes employing the relevancy range and the set of seed values to perform curve-fitting, wherein the curve-fitting enables the plasma to be automatically characterized.

摘要翻译： 提供了一种用于在衬底处理期间自动表征等离子体的方法。 该方法包括收集一组过程数据，其至少包括关于电流和电压的数据。 该方法还包括识别该组过程数据的相关范围，其中相关范围包括一组过程数据的子集。 该方法还包括确定一组种子值。 该方法还包括采用相关范围和种子值集来执行曲线拟合，其中曲线拟合使等离子体能够被自动表征。

公开(公告)号：US08179152B2

公开(公告)日：2012-05-15

申请号：US12498950

申请日：2009-07-07

申请人： Jean-Paul Booth ,  Mikio Nagai ,  Douglas Keil

发明人： Jean-Paul Booth ,  Mikio Nagai ,  Douglas Keil

IPC分类号： G01R31/08

CPC分类号： H01J37/32935

摘要： An arrangement for detecting plasma instability within a processing chamber of a plasma processing system during substrate processing is provided. The arrangement includes a probe arrangement, wherein the probe arrangement is disposed on a surface of the processing chamber and is configured to measure at least one plasma processing parameter. The probe arrangement includes a plasma-facing sensor and a measuring capacitor, wherein the plasma-facing sensor is coupled to a first plate of the measuring capacitor. The arrangement also includes a detection arrangement, which is coupled to a second plate of the measuring capacitor. The detection arrangement is configured to convert an induced current flowing through the measuring capacitor into a set of digital signals, the set of digital signals being processed to detect the plasma instability.

摘要翻译： 提供了一种用于在衬底处理期间检测等离子体处理系统的处理室内的等离子体不稳定性的装置。 该装置包括探针装置，其中探针装置设置在处理室的表面上并被配置成测量至少一个等离子体处理参数。 探针装置包括等离子体面向传感器和测量电容器，其中等离子体面向传感器耦合到测量电容器的第一板。 该装置还包括耦合到测量电容器的第二板的检测装置。 检测装置被配置为将流过测量电容器的感应电流转换成一组数字信号，该组数字信号被处理以检测等离子体不稳定性。

公开(公告)号：US08159233B2

公开(公告)日：2012-04-17

申请号：US12498934

申请日：2009-07-07

申请人： Jean-Paul Booth ,  Douglas Keil

发明人： Jean-Paul Booth ,  Douglas Keil

IPC分类号： G01R27/26 ,  H01H9/50 ,  B23K9/00

CPC分类号： H01J37/3299 ,  G01D5/24 ,  G01R27/2605 ,  G01R31/1272 ,  G01R31/34 ,  G01R31/343 ,  H01J37/32935 ,  H02H1/0015 ,  H02H3/44

摘要： An arrangement for detecting in-situ arcing events within a processing chamber of a plasma processing system during substrate processing is provided. The arrangement includes a probe arrangement, which is disposed on a surface of the processing chamber and is configured to measure at least one plasma processing parameter. The probe arrangement includes a plasma-facing sensor and a measuring capacitor, wherein the plasma-facing sensor is coupled to a first plate of the measuring capacitor. The probe arrangement also includes a detection arrangement that is coupled to a second plate of the measuring capacitor, wherein the detection arrangement is configured for converting an induced current flowing through the measuring capacitor into a set of digital signals, which is processed to detect the in-situ arcing events.

摘要翻译： 提供了一种用于在衬底处理期间检测等离子体处理系统的处理室内的原位电弧事件的装置。 该装置包括设置在处理室的表面上并被配置成测量至少一个等离子体处理参数的探针装置。 探针装置包括等离子体面向传感器和测量电容器，其中等离子体面向传感器耦合到测量电容器的第一板。 探针装置还包括耦合到测量电容器的第二板的检测装置，其中检测装置被配置为将流过测量电容器的感应电流转换成一组数字信号，该组数字信号被处理以检测在 电击事件。

公开(公告)号：US20110022215A1

公开(公告)日：2011-01-27

申请号：US12898342

申请日：2010-10-05

申请人： Douglas Keil ,  Eric Hudson ,  Chris Kimball ,  Andreas Fischer

发明人： Douglas Keil ,  Eric Hudson ,  Chris Kimball ,  Andreas Fischer

IPC分类号： G06F17/00 ,  G06F15/00

CPC分类号： C23C16/52 ,  C23C16/509 ,  H01J37/32935 ,  H01J37/3299

摘要： A method of fault detection for use in a plasma processing chamber is provided. The method comprises monitoring plasma parameters within a plasma chamber and analyzing the resulting information. Such analysis enables detection of failures and the diagnosis of failure modes in a plasma processing reactor during the course of wafer processing. The method comprises measuring the plasma parameters as a function of time and analyzing the resulting data. The data can be observed, characterized, compared with reference data, digitized, processed, or analyzed in any way to reveal a specific fault. Monitoring can be done with a detector such as a probe, which is preferably maintained within the plasma chamber substantively coplanar with a surface within the chamber, and directly measures net ion flux and other plasma parameters. The detector is preferably positioned at a grounded surface within the reactor such as a grounded showerhead electrode, and can be of a planar ion flux probe (PIF) type or a non-capacitive type. Chamber faults that can be detected include a build-up of process by-products in the process chamber, a helium leak, a match re-tuning event, a poor stabilization rate, and a loss of plasma confinement. If the detector is a probe, the probe can be embedded in a part of a plasma processing chamber and can comprises one or more gas feed-through holes.

摘要翻译： 提供了一种用于等离子体处理室的故障检测方法。 该方法包括监测等离子体室内的等离子体参数并分析所得到的信息。 这样的分析使得能够在晶片处理过程中检测等离子体处理反应器中的故障和故障模式的诊断。 该方法包括测量作为时间的函数的等离子体参数并分析所得到的数据。 数据可以观察，表征，与参考数据进行比较，数字化，处理或分析，以显示特定故障。 可以用诸如探针的检测器进行监测，该探针优选地保持在与腔室内的表面基本上共面的等离子体室内，并且直接测量净离子通量和其它等离子体参数。 检测器优选地位于反应器内的接地表面，例如接地喷头电极，并且可以是平面离子通量探针（PIF）型或非电容型。 可以检测到的室内故障包括处理室中的过程副产物的积聚，氦泄漏，匹配重新调谐事件，差的稳定化速率和等离子体约束的损失。 如果检测器是探针，则探针可以嵌入在等离子体处理室的一部分中，并且可以包括一个或多个气体馈通孔。