公开(公告)号：US20120223443A1

公开(公告)日：2012-09-06

申请号：US13280487

申请日：2011-10-25

申请人： Chuan-Feng LIU ,  Ya-Rou Chen ,  Heng-Hao Chang

发明人： Chuan-Feng LIU ,  Ya-Rou Chen ,  Heng-Hao Chang

IPC分类号： H01L23/48

CPC分类号： H01L27/3276 ,  H01L23/3171 ,  H01L23/3192 ,  H01L24/05 ,  H01L24/06 ,  H01L24/16 ,  H01L24/32 ,  H01L2224/02375 ,  H01L2224/0401 ,  H01L2224/05548 ,  H01L2224/05553 ,  H01L2224/05571 ,  H01L2224/06133 ,  H01L2224/06135 ,  H01L2224/16145 ,  H01L2224/2929 ,  H01L2224/293 ,  H01L2224/73204 ,  H01L2924/00014 ,  H01L2924/381 ,  H01L2224/13099

摘要： An active matrix substrate includes a substrate and an insulating unit arranged on the substrate. The substrate includes a display region and a periphery circuit region beside the display region. The periphery circuit region has at least a chip connecting unit. Each chip connecting unit includes a number of connecting elements. Each of the connecting elements includes a conducting pad and a wire electrically connected to the conducting pad. The conducting pads of the connecting elements are arranged in at least two rows. The insulating unit has a number of contact holes corresponding to the conducting pads so that each of the conducting pads is entirely exposed by the corresponding contact hole. The active matrix substrate is applied to a display device to increase reliability of the display device and improve the quality of the display device.

摘要翻译： 有源矩阵基板包括布置在基板上的基板和绝缘单元。 衬底包括显示区域和显示区域旁边的外围电路区域。 外围电路区域至少具有芯片连接单元。 每个芯片连接单元包括多个连接元件。 每个连接元件包括导电焊盘和电连接到导电焊盘的导线。 连接元件的导电垫片至少布置成两列。 绝缘单元具有与导电垫相对应的多个接触孔，使得每个导电垫完全由相应的接触孔暴露。 将有源矩阵基板应用于显示装置，以提高显示装置的可靠性并提高显示装置的质量。

公开(公告)号：US20120153283A1

公开(公告)日：2012-06-21

申请号：US13106882

申请日：2011-05-13

申请人： Chuan-Feng LIU

发明人： Chuan-Feng LIU

IPC分类号： H01L33/08 ,  H01L33/16

CPC分类号： H01L27/1288 ,  G02F1/136204 ,  G02F1/167

摘要： A display device structure includes a substrate having an active region and an electrostatic protection circuit region. The first metal layer, the first insulation layer, and an amorphous silicon layer are sequentially disposed on the substrate; the first opening passes through the first insulation layer for exposing part of the first metal layer. The second metal layer, disposed on the first insulation layer or the amorphous silicon layer, fills the first opening to contact with the first metal layer; the second insulation layer and the flat layer are disposed on the second metal layer, in which the region of the flat layer is overlapped the electrostatic protection circuit region. The second opening passes through the second insulation layer and the flat layer for exposing the second metal layer, in which the third metal layer fills the second opening to contact with the second metal layer.

摘要翻译： 显示装置结构包括具有有源区和静电保护电路区的基板。 第一金属层，第一绝缘层和非晶硅层依次设置在基板上; 第一开口穿过第一绝缘层，以露出第一金属层的一部分。 设置在第一绝缘层或非晶硅层上的第二金属层填充第一开口以与第一金属层接触; 第二绝缘层和平坦层设置在第二金属层上，其中平坦层的区域与静电保护电路区域重叠。 第二开口穿过第二绝缘层和用于暴露第二金属层的平坦层，其中第三金属层填充第二开口以与第二金属层接触。

公开(公告)号：US20070257260A1

公开(公告)日：2007-11-08

申请号：US11559489

申请日：2006-11-14

申请人： Chuan-Feng LIU

发明人： Chuan-Feng LIU

IPC分类号： H01L29/04

CPC分类号： H01L29/78696

摘要： A multi-channel thin film transistor structure including a first conducting layer, an insulating layer, a semiconductor layer and a second conducting layer is provided. The first conducting layer formed on a substrate includes a gate electrode. The insulating layer covers the first conducting layer. The semiconductor layer formed on the insulating layer includes a plurality of semiconductor islands located above the gate electrode. The second conducting layer formed on the insulating layer and on the semiconductor layer includes a source electrode and a drain electrode. Each one of the semiconductor islands is coupled electrically with the source electrode at one end and coupled electrically with the drain electrode at the other end.

摘要翻译： 提供了包括第一导电层，绝缘层，半导体层和第二导电层的多沟道薄膜晶体管结构。 形成在基板上的第一导电层包括栅电极。 绝缘层覆盖第一导电层。 形成在绝缘层上的半导体层包括位于栅电极上方的多个半导体岛。 形成在绝缘层和半导体层上的第二导电层包括源电极和漏电极。 半导体岛中的每一个在一端与源电极电连接并且在另一端与漏电极电连接。