公开(公告)号：US20120140193A1

公开(公告)日：2012-06-07

申请号：US12960319

申请日：2010-12-03

Applicant: Chui-Fu Chiu ,  Chiang-Lin Shih

Inventor： Chui-Fu Chiu ,  Chiang-Lin Shih

IPC: G03B27/42

CPC classification number: H01L23/544 ,  G03F9/7003 ,  G03F9/7088 ,  H01L2223/54453 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A dynamic wafer alignment method and an exposure scanner system are provided. The exposure scanner system having a scan path, includes an exposure apparatus, an optical sensor apparatus and a wafer stage. The method comprises the steps of: (a) providing a wafer, having a plurality of shot areas, wherein each shot area has a plurality of alignment marks thereon; (b) forming a photo-resist layer on the wafer; (c) detecting the alignment marks at a portion of a shot area along the scan path by the optical sensor apparatus to obtain compensation data for wafer alignment of the portion of the shot area; (d) performing real time feedback of the compensation data for wafer alignment to the wafer stage; (e) exposing the photo-resist layer at the portion of the shot area along the scan path; (f) continuously repeating the steps (c) to (e) at the shot area along the scan path until all of the photo-resist layer at the shot area are exposed; and (g) repeating the step (f) until the photo-resist layer of all of the shot areas on the wafer are exposed.

Abstract translation: 提供动态晶片对准方法和曝光扫描器系统。 具有扫描路径的曝光扫描器系统包括曝光装置，光学传感器装置和晶片台。 该方法包括以下步骤：（a）提供具有多个拍摄区域的晶片，其中每个拍摄区域上具有多个对准标记; （b）在晶片上形成光刻胶层; （c）通过光学传感器装置检测沿着扫描路径的拍摄区域的一部分处的对准标记，以获得用于拍摄区域的该部分的晶片对准的补偿数据; （d）对晶片台进行晶片对准的补偿数据的实时反馈; （e）沿着扫描路径在照射区域的部分处暴露光致抗蚀剂层; （f）沿扫描路径连续地重复步骤（c）至（e），直到所有的光刻胶层都被曝光; 和（g）重复步骤（f），直到晶片上的所有照射区域的光致抗蚀剂层露出。

公开(公告)号：US20120308788A1

公开(公告)日：2012-12-06

申请号：US13149841

申请日：2011-05-31

Applicant: Chui-Fu Chiu ,  Chun-Yen Huang

Inventor： Chui-Fu Chiu ,  Chun-Yen Huang

IPC: G03F7/20 ,  B44C1/17 ,  B32B37/02 ,  B32B3/10

CPC classification number: G03F7/70633 ,  G03F7/70683 ,  Y10T428/24851

Abstract: An overlay mark set includes a substrate, a first overlay mark and a second overlay mark. The first overlay mark is disposed on the substrate for representing a first layout pattern. The second overlay mark is also disposed on the substrate for representing a second layout pattern. In particular, the first overlay mark is in direct contact with the second overlay mark.

Abstract translation: 覆盖标记集包括基底，第一覆盖标记和第二覆盖标记。 第一覆盖标记设置在用于表示第一布局图案的基板上。 第二覆盖标记也设置在基板上用于表示第二布局图案。 特别地，第一覆盖标记与第二覆盖标记直接接触。

公开(公告)号：US09017926B2

公开(公告)日：2015-04-28

申请号：US13603427

申请日：2012-09-05

Applicant: Chui-Fu Chiu

Inventor： Chui-Fu Chiu

IPC: G03F9/00 ,  G03F1/56 ,  G03F7/00 ,  G03F7/20

CPC classification number: G03F1/56 ,  G03F7/00 ,  G03F7/70633 ,  G03F7/70683 ,  G03F9/7073 ,  Y10T428/24802

Abstract: A method of forming an overlay mark is provided. A plurality of photoresist patterns are formed on a substrate. Each of the photoresist patterns includes a first strip and a plurality of second strips arranged in parallel. The first strip crosses the second strips to form a fence shape. Further, there is a space between two adjacent photoresist patterns, and the space is fence-shaped. A plurality of islands are formed in each of the spaces to form dot type strip patterns. The photoresist patterns are removed, and the dot type strip patterns serve as the overlay mark.

Abstract translation: 提供了一种形成覆盖标记的方法。 在基板上形成多个光刻胶图案。 每个光致抗蚀剂图案包括第一条和平行布置的多个第二条。 第一条带穿过第二条带形成栅栏形状。 此外，在两个相邻的光致抗蚀剂图案之间存在空间，并且该空间是栅栏形的。 在每个空间中形成多个岛以形成点型带状图案。 去除光致抗蚀剂图案，并且点型条纹图案用作覆盖标记。

公开(公告)号：US07933015B2

公开(公告)日：2011-04-26

申请号：US12035550

申请日：2008-02-22

Applicant: Chui-Fu Chiu ,  Jung-Chih Kuo

Inventor： Chui-Fu Chiu ,  Jung-Chih Kuo

IPC: G01B11/00 ,  G03F9/00 ,  G03C5/00

CPC classification number: G03B27/42

Abstract: A mark for alignment and overlay, a mask having the same, and a method of using the same are provided. The mark includes a first mark pattern and a second mark pattern. The first mark pattern includes a first pattern and a second pattern, and the second mark pattern includes a third pattern and a fourth pattern. The first pattern includes a plurality of rectangular regions arranged in a first direction, and for each rectangular region, a sideline in a second direction is longer than a sideline in the first direction, wherein the first direction is perpendicular to the second direction. The second pattern is disposed on both sides of the first pattern in the second direction and includes a plurality of rectangular regions arranged in the second direction, and for each rectangular region, the sideline in the first direction is longer than a sideline in the second direction. The third pattern includes two rectangular regions disposed on both sides of the first pattern in the first direction, and the fourth pattern includes two rectangular regions disposed on both sides of the second pattern in the second direction.

Abstract translation: 提供了对准和覆盖的标记，具有相同的掩码及其使用方法。 标记包括第一标记图案和第二标记图案。 第一标记图案包括第一图案和第二图案，第二标记图案包括第三图案和第四图案。 第一图案包括沿第一方向布置的多个矩形区域，并且对于每个矩形区域，第二方向上的副线比第一方向上的副线长，其中第一方向垂直于第二方向。 第二图案在第二方向上设置在第一图案的两侧，并且包括沿第二方向布置的多个矩形区域，并且对于每个矩形区域，第一方向上的边线比第二方向上的副线长 。 第三图案包括在第一方向上设置在第一图案的两侧的两个矩形区域，并且第四图案包括在第二方向上设置在第二图案的两侧上的两个矩形区域。

公开(公告)号：US20110012271A1

公开(公告)日：2011-01-20

申请号：US12502236

申请日：2009-07-14

Applicant: Chui-Fu Chiu

Inventor： Chui-Fu Chiu

IPC: H01L23/544

CPC classification number: G03F9/7084 ,  G03F7/70633 ,  G03F7/70683 ,  G03F9/7076

Abstract: An integrated alignment and overlay mark includes a pre-layer pattern for reticle-to-wafer registration implemented in an exposure tool, and a current-layer pattern incorporated with the pre-layer pattern. The pre-layer pattern and the current-layer pattern constitute an overlay mark for determining registration accuracy between two patterned layers on a semiconductor wafer.

Abstract translation: 集成对准和覆盖标记包括用于在曝光工具中实现的用于标线片到晶片配准的预层图案，以及结合有预层图案的当前层图案。 预层图案和当前层图案构成用于确定半导体晶片上的两个图案化层之间的配准精度的重叠标记。

公开(公告)号：US08745546B2

公开(公告)日：2014-06-03

申请号：US13340278

申请日：2011-12-29

Applicant: Chui-Fu Chiu

Inventor： Chui-Fu Chiu

IPC: G06F17/50 ,  G06K9/00 ,  G03C5/00

CPC classification number: G03F1/42 ,  G03F7/70633 ,  G03F7/70683

Abstract: A mask overlay method, and a mask and a semiconductor device using the same are disclosed. According to the disclosed mask overlay technique, test marks and front layer overlay marks corresponding to a plurality of overlay mark designs are generated in a first layer of a semiconductor device. The test patterns generating the test marks each include a first sub pattern and a second sub pattern. Note that the first sub pattern has the same design as a front layer overlay pattern (which generates the front layer overlay mark corresponding thereto). Based on the test marks, performances of the plurality of overlay mark designs are graded. The front layer overlay mark corresponding to the overlay mark design having the best performance is regarded as an overlay reference for a mask of a second layer of the semiconductor device.

Abstract translation: 公开了掩模覆盖法，掩模和使用其的半导体器件。 根据所公开的掩模覆盖技术，在半导体器件的第一层中产生与多个覆盖标记设计相对应的测试标记和前面层覆盖标记。 产生测试标记的测试图案各自包括第一子图案和第二子图案。 注意，第一子图案具有与前层覆盖图案相同的设计（其产生与其对应的前层叠加标记）。 基于测试标记，多个叠加标记设计的性能被分级。 对应于具有最佳性能的重叠标记设计的前层叠加标记被认为是半导体器件的第二层的掩模的覆盖基准。

公开(公告)号：US20140065380A1

公开(公告)日：2014-03-06

申请号：US13603427

申请日：2012-09-05

Applicant: Chui-Fu Chiu

Inventor： Chui-Fu Chiu

IPC: B32B3/10 ,  B44C1/22

CPC classification number: G03F1/56 ,  G03F7/00 ,  G03F7/70633 ,  G03F7/70683 ,  G03F9/7073 ,  Y10T428/24802

Abstract: A method of forming an overlay mark is provided. A plurality of photoresist patterns are formed on a substrate. Each of the photoresist patterns includes a first strip and a plurality of second strips arranged in parallel. The first strip crosses the second strips to form a fence shape. Further, there is a space between two adjacent photoresist patterns, and the space is fence-shaped. A plurality of islands are formed in each of the spaces to form dot type strip patterns. The photoresist patterns are removed, and the dot type strip patterns serve as the overlay mark.

Abstract translation: 提供了一种形成覆盖标记的方法。 在基板上形成多个光刻胶图案。 每个光致抗蚀剂图案包括第一条和平行布置的多个第二条。 第一条带穿过第二条带形成栅栏形状。 此外，在两个相邻的光致抗蚀剂图案之间存在空间，并且该空间是栅栏形的。 在每个空间中形成多个岛以形成点型带状图案。 去除光致抗蚀剂图案，并且点型条纹图案用作覆盖标记。

公开(公告)号：US08143731B2

公开(公告)日：2012-03-27

申请号：US12502236

申请日：2009-07-14

Applicant: Chui-Fu Chiu

Inventor： Chui-Fu Chiu

IPC: H01L23/544

CPC classification number: G03F9/7084 ,  G03F7/70633 ,  G03F7/70683 ,  G03F9/7076

Abstract: An integrated alignment and overlay mark includes a pre-layer pattern for reticle-to-wafer registration implemented in an exposure tool, and a current-layer pattern incorporated with the pre-layer pattern. The pre-layer pattern and the current-layer pattern constitute an overlay mark for determining registration accuracy between two patterned layers on a semiconductor wafer.

Abstract translation: 集成对准和覆盖标记包括用于在曝光工具中实现的用于标线片到晶片配准的预层图案，以及结合有预层图案的当前层图案。 预层图案和当前层图案构成用于确定半导体晶片上的两个图案化层之间的配准精度的重叠标记。