公开(公告)号：US20070026655A1

公开(公告)日：2007-02-01

申请号：US11489985

申请日：2006-07-20

申请人： Chul-Sung Kim ,  Yu-Gyun Shin ,  Bon-Young Koo ,  Ji-Hyun Kim ,  Young-Jin Noh

发明人： Chul-Sung Kim ,  Yu-Gyun Shin ,  Bon-Young Koo ,  Ji-Hyun Kim ,  Young-Jin Noh

IPC分类号： H01L21/473

CPC分类号： H01L27/115 ,  H01L27/11521

摘要： In a method of manufacturing a semiconductor device for use in such applications as a flash memory device, a field insulating pattern defines an opening that exposes an active region of a semiconductor substrate. The field insulating pattern includes a first portion protruding from the substrate and a second portion buried in the substrate. An oxide layer is formed on the active region by an oxidation process using a reactive plasma including an oxygen radical and a conductive layer is then formed on the oxide layer to sufficiently fill up the opening. The oxide layer is formed by an oxidation reaction of a surface portion of the active region with the oxygen radical having a relatively low activation energy, resulting in an improved thickness uniformity of the oxide layer. As a result, various performance characteristics of the semiconductor device when used in flash memory and similar applications are improved.

摘要翻译： 在制造用于诸如闪速存储器件的应用中的半导体器件的方法中，场绝缘图案限定了露出半导体衬底的有源区的开口。 场绝缘图案包括从基板突出的第一部分和埋在基板中的第二部分。 通过使用包含氧自由基的反应性等离子体的氧化工艺在有源区上形成氧化物层，然后在氧化物层上形成导电层以充分填充开口。 通过活性区域的表面部分与具有相对较低的活化能的氧自由基的氧化反应形成氧化物层，从而改善氧化物层的厚度均匀性。 结果，改善了当用于闪速存储器和类似应用时半导体器件的各种性能特性。

公开(公告)号：US07419918B2

公开(公告)日：2008-09-02

申请号：US11399670

申请日：2006-04-06

申请人： Chul-Sung Kim ,  Yu-Gyun Shin ,  Bon-Young Koo ,  Ji-Hyun Kim ,  Young-Jin Noh

发明人： Chul-Sung Kim ,  Yu-Gyun Shin ,  Bon-Young Koo ,  Ji-Hyun Kim ,  Young-Jin Noh

IPC分类号： H01L21/31

CPC分类号： H01L27/115 ,  H01L27/11521 ,  H01L27/11568

摘要： In a method of forming a thin-film structure employed in a non-volatile semiconductor device, an oxide film is formed on a substrate. An upper nitride film is formed on the oxide film by nitrifying an upper portion of the oxide film through a plasma nitration process. A lower nitride film is formed between the substrate and the oxide film by nitrifying a lower portion of the oxide film through a thermal nitration process. A damage to the thin-film structure generated in the plasma nitration process may be at least partially cured in the thermal nitration process, and/or may be cured in a post-thermal treatment process.

摘要翻译： 在非易失性半导体器件中使用的薄膜结构的形成方法中，在基板上形成氧化膜。 通过等离子体硝化工艺对氧化膜的上部进行硝化，在氧化物膜上形成上部氮化物膜。 通过热硝化处理使氧化膜的下部硝化，在基板和氧化膜之间形成下部氮化膜。 在等离子体硝化过程中产生的薄膜结构的损坏可以在热硝化过程中至少部分地固化，和/或可以在后热处理过程中固化。

公开(公告)号：US20060228841A1

公开(公告)日：2006-10-12

申请号：US11399670

申请日：2006-04-06

申请人： Chul-Sung Kim ,  Yu-Gyun Shin ,  Bon-Young Koo ,  Ji-Hyun Kim ,  Young-Jin Noh

发明人： Chul-Sung Kim ,  Yu-Gyun Shin ,  Bon-Young Koo ,  Ji-Hyun Kim ,  Young-Jin Noh

IPC分类号： H01L21/84 ,  H01L21/00

CPC分类号： H01L27/115 ,  H01L27/11521 ,  H01L27/11568

摘要： In a method of forming a thin-film structure employed in a non-volatile semiconductor device, an oxide film is formed on a substrate. An upper nitride film is formed on the oxide film by nitrifying an upper portion of the oxide film through a plasma nitration process. A lower nitride film is formed between the substrate and the oxide film by nitrifying a lower portion of the oxide film through a thermal nitration process. A damage to the thin-film structure generated in the plasma nitration process may be at least partially cured in the thermal nitration process, and/or may be cured in a post-thermal treatment process.

摘要翻译： 在非易失性半导体器件中使用的薄膜结构的形成方法中，在基板上形成氧化膜。 通过等离子体硝化工艺对氧化膜的上部进行硝化，在氧化物膜上形成上部氮化物膜。 通过热硝化处理使氧化膜的下部硝化，在基板和氧化膜之间形成下部氮化膜。 在等离子体硝化过程中产生的薄膜结构的损坏可以在热硝化过程中至少部分地固化，和/或可以在后热处理过程中固化。

公开(公告)号：US07608509B2

公开(公告)日：2009-10-27

申请号：US11494439

申请日：2006-07-27

申请人： Chul-Sung Kim ,  Yu-Gyun Shin ,  Bon-Young Koo ,  Sung-Kweon Baek ,  Young-Jin Noh

发明人： Chul-Sung Kim ,  Yu-Gyun Shin ,  Bon-Young Koo ,  Sung-Kweon Baek ,  Young-Jin Noh

IPC分类号： H01L21/336 ,  H01L29/788

CPC分类号： H01L29/7881 ,  H01L27/115 ,  H01L27/11521 ,  H01L29/42336

摘要： In a semiconductor device and a method of manufacturing the semiconductor device, preliminary isolation regions having protruded upper portions are formed on a substrate to define an active region. After an insulation layer is formed on the active region, a first conductive layer is formed on the insulation layer. The protruded upper portions of the preliminary isolation regions are removed to form isolation regions on the substrate and to expose sidewalls of the first conductive layer, and compensation members are formed on edge portions of the insulation layer. The compensation members may complement the edge portions of the insulation layer that have thicknesses substantially thinner than that of a center portion of the insulation layer, and may prevent deterioration of the insulation layer. Furthermore, the first conductive layer having a width substantially greater than that of the active region may enhance a coupling ratio of the semiconductor device. Thus, the semiconductor device may have improved electrical characteristics and reliability.

摘要翻译： 在半导体器件和半导体器件的制造方法中，在衬底上形成具有突出的上部的预备隔离区以限定有源区。 在有源区上形成绝缘层之后，在绝缘层上形成第一导电层。 去除预分离区域的突出的上部，以在衬底上形成隔离区域并暴露第一导电层的侧壁，并且补偿构件形成在绝缘层的边缘部分上。 补偿构件可以补充绝缘层的边缘部分，该边缘部分的厚度基本上比绝缘层的中心部分的厚度更薄，并且可以防止绝缘层的劣化。 此外，具有基本上大于有源区的宽度的第一导电层可以增强半导体器件的耦合比。 因此，半导体器件可以具有改善的电特性和可靠性。

公开(公告)号：US20070023821A1

公开(公告)日：2007-02-01

申请号：US11494439

申请日：2006-07-27

申请人： Chul-Sung Kim ,  Yu-Gyun Shin ,  Bon-Young Koo ,  Sung-Kweon Baek ,  Young-Jin Noh

发明人： Chul-Sung Kim ,  Yu-Gyun Shin ,  Bon-Young Koo ,  Sung-Kweon Baek ,  Young-Jin Noh

IPC分类号： H01L29/788

CPC分类号： H01L29/7881 ,  H01L27/115 ,  H01L27/11521 ,  H01L29/42336

摘要： In a semiconductor device and a method of manufacturing the semiconductor device, preliminary isolation regions having protruded upper portions are formed on a substrate to define an active region. After an insulation layer is formed on the active region, a first conductive layer is formed on the insulation layer. The protruded upper portions of the preliminary isolation regions are removed to form isolation regions on the substrate and to expose sidewalls of the first conductive layer, and compensation members are formed on edge portions of the insulation layer. The compensation members may complement the edge portions of the insulation layer that have thicknesses substantially thinner than that of a center portion of the insulation layer, and may prevent deterioration of the insulation layer. Furthermore, the first conductive layer having a width substantially greater than that of the active region may enhance a coupling ratio of the semiconductor device. Thus, the semiconductor device may have improved electrical characteristics and reliability.

摘要翻译： 在半导体器件和半导体器件的制造方法中，在衬底上形成具有突出的上部的预备隔离区以限定有源区。 在有源区上形成绝缘层之后，在绝缘层上形成第一导电层。 去除预分离区域的突出的上部，以在衬底上形成隔离区域并暴露第一导电层的侧壁，并且补偿构件形成在绝缘层的边缘部分上。 补偿构件可以补充绝缘层的边缘部分，该边缘部分的厚度基本上比绝缘层的中心部分的厚度更薄，并且可以防止绝缘层的劣化。 此外，具有基本上大于有源区的宽度的第一导电层可以增强半导体器件的耦合比。 因此，半导体器件可以具有改善的电特性和可靠性。

公开(公告)号：US20070167030A1

公开(公告)日：2007-07-19

申请号：US11639164

申请日：2006-12-15

申请人： Jung-Geun Jee ,  Young-Jin Noh ,  Bon-Young Koo ,  Chul-Sung Kim ,  Hun-Hyeoung Leam ,  Woong Lee

发明人： Jung-Geun Jee ,  Young-Jin Noh ,  Bon-Young Koo ,  Chul-Sung Kim ,  Hun-Hyeoung Leam ,  Woong Lee

IPC分类号： H01L21/31

CPC分类号： H01L21/3144 ,  H01L21/0217 ,  H01L21/022 ,  H01L21/02238 ,  H01L21/02252 ,  H01L21/02255 ,  H01L21/02332 ,  H01L21/02337 ,  H01L21/0234 ,  H01L21/31662 ,  H01L27/115 ,  H01L27/11521

摘要： In a method of forming an insulation structure, at least one oxide layer is formed on an object by at least one oxidation process, and then at least one nitride layer is formed from the oxide layer by at least one nitration process. An edge portion of the insulation structure may have a thickness substantially the same as that of a central portion of the insulation structure so that the insulation structure may have a uniform thickness and improved insulation characteristics. When the insulation structure is employed as a tunnel insulation layer of a semiconductor device, the semiconductor device may have enhanced endurance and improved electrical characteristics because a threshold voltage distribution of cells in the semiconductor device may become uniform.

摘要翻译： 在形成绝缘结构的方法中，通过至少一个氧化工艺在物体上形成至少一个氧化物层，然后通过至少一个硝化工艺从氧化物层形成至少一个氮化物层。 绝缘结构的边缘部分可以具有与绝缘结构的中心部分的厚度基本相同的厚度，使得绝缘结构可以具有均匀的厚度和改善的绝缘特性。 当采用绝缘结构作为半导体器件的隧道绝缘层时，由于半导体器件中的单元的阈值电压分布可能变得均匀，所以半导体器件可以具有增强的耐久性和改善的电特性。

公开(公告)号：US20090134450A1

公开(公告)日：2009-05-28

申请号：US12153686

申请日：2008-05-22

申请人： Chul-sung Kim ,  Si-young Choi ,  Bon-young Koo ,  Ki-hyun Hwang ,  Young-Jin Noh

发明人： Chul-sung Kim ,  Si-young Choi ,  Bon-young Koo ,  Ki-hyun Hwang ,  Young-Jin Noh

IPC分类号： H01L29/788

CPC分类号： H01L29/792 ,  G11C16/0416 ,  H01L29/40114 ,  H01L29/40117 ,  H01L29/42324 ,  H01L29/4234 ,  H01L29/513 ,  H01L29/7881

摘要： Provided is a tunneling insulating layer, a flash memory device including the same that increases a program/erase operation speed of the flash memory device and has improved data retention in order to increase reliability of the flash memory device, a memory card and system including the flash memory device, and methods of manufacturing the same. A tunneling insulating layer may include a first region and a second region on the first region, wherein the first region has a first nitrogen atomic percent, the second region has a second nitrogen atomic percent, and the second nitrogen atomic percent is less than the first nitrogen atomic percent. The flash memory device according to example embodiments may include a substrate including source and drain regions and a channel region between the source and drain regions, the tunneling insulating layer on the channel region, a charge storage layer on the tunneling insulating layer, a blocking insulation layer on the charge storage layer, and a gate electrode on the blocking insulation layer.

摘要翻译： 提供了一种隧道绝缘层，包括其的闪速存储器件，其提高闪速存储器件的编程/擦除操作速度，并且具有改进的数据保持以便提高闪存器件的可靠性，存储卡和系统包括 闪存装置及其制造方法。 隧道绝缘层可以包括在第一区域上的第一区域和第二区域，其中第一区域具有第一氮原子百分比，第二区域具有第二氮原子百分比，第二氮原子百分比小于第一区域的第一区域 氮原子百分比。 根据示例性实施例的闪速存储器件可以包括：衬底，其包括源极和漏极区域以及在源极和漏极区域之间的沟道区域，沟道区域上的隧道绝缘层，隧道绝缘层上的电荷存储层，阻挡绝缘层 电荷存储层上的栅极电极和阻挡绝缘层上的栅电极。

公开(公告)号：US20110275190A1

公开(公告)日：2011-11-10

申请号：US13188587

申请日：2011-07-22

申请人： Jung-Geun JEE ,  Young-Jin Noh ,  Bon-Young Koo ,  Chul-Sung Kim ,  Hun-Hyeoung Leam ,  Woong Lee

发明人： Jung-Geun JEE ,  Young-Jin Noh ,  Bon-Young Koo ,  Chul-Sung Kim ,  Hun-Hyeoung Leam ,  Woong Lee

IPC分类号： H01L21/762

CPC分类号： H01L21/3144 ,  H01L21/0217 ,  H01L21/022 ,  H01L21/02238 ,  H01L21/02252 ,  H01L21/02255 ,  H01L21/02332 ,  H01L21/02337 ,  H01L21/0234 ,  H01L21/31662 ,  H01L27/115 ,  H01L27/11521

摘要： In a method of forming an insulation structure, at least one oxide layer is formed on an object by at least one oxidation process, and then at least one nitride layer is formed from the oxide layer by at least one nitration process. An edge portion of the insulation structure may have a thickness substantially the same as that of a central portion of the insulation structure so that the insulation structure may have a uniform thickness and improved insulation characteristics. When the insulation structure is employed as a tunnel insulation layer of a semiconductor device, the semiconductor device may have enhanced endurance and improved electrical characteristics because a threshold voltage distribution of cells in the semiconductor device may become uniform.

摘要翻译： 在形成绝缘结构的方法中，通过至少一个氧化工艺在物体上形成至少一个氧化物层，然后通过至少一个硝化工艺从氧化物层形成至少一个氮化物层。 绝缘结构的边缘部分可以具有与绝缘结构的中心部分的厚度基本相同的厚度，使得绝缘结构可以具有均匀的厚度和改善的绝缘特性。 当采用绝缘结构作为半导体器件的隧道绝缘层时，由于半导体器件中的单元的阈值电压分布可能变得均匀，所以半导体器件可以具有增强的耐久性和改善的电特性。

公开(公告)号：US20080090354A1

公开(公告)日：2008-04-17

申请号：US11868195

申请日：2007-10-05

申请人： Sung-Kweon Baek ,  Bon-Young Koo ,  Chul-Sung Kim ,  Jung-Geun Jee ,  Young-Jin Noh

发明人： Sung-Kweon Baek ,  Bon-Young Koo ,  Chul-Sung Kim ,  Jung-Geun Jee ,  Young-Jin Noh

IPC分类号： H01L21/336

CPC分类号： H01L29/7881 ,  H01L21/28273 ,  H01L21/28282 ,  H01L27/115 ,  H01L27/11521 ,  H01L27/11568 ,  H01L29/42324 ,  H01L29/4234 ,  H01L29/792

摘要： A method of manufacturing a non-volatile memory device, includes forming a tunnel isolation layer comprising an oxynitride on a substrate by a simultaneous oxidation and nitridation treatment in which an oxidation process and a nitridation process are simultaneously performed using a processing gas including oxygen and nitrogen. The method further includes performing first and second heat treatments to remove defect sites from the tunnel isolation layer in gas atmospheres including nitrogen (N) and chlorine (Cl), respectively and forming a gate structure on the tunnel isolation layer after the second heat treatment, and forming source/drain regions at surface portions of the substrate adjacent to the gate structure.

摘要翻译： 一种制造非易失性存储器件的方法包括通过同时氧化和氮化处理在衬底上形成包含氧氮化物的隧道隔离层，其中使用包括氧和氮的处理气体同时进行氧化过程和氮化处理 。 该方法还包括进行第一和第二热处理以分别在包括氮（N）和氯（Cl）的气体环境中从隧道隔离层去除缺陷位点，并在第二热处理之后在隧道隔离层上形成栅结构， 以及在与栅极结构相邻的衬底的表面部分处形成源极/漏极区域。

公开(公告)号：US08481387B2

公开(公告)日：2013-07-09

申请号：US13188587

申请日：2011-07-22

申请人： Jung-Geun Jee ,  Young-Jin Noh ,  Bon-Young Koo ,  Chul-Sung Kim ,  Hun-Hyeoung Leam ,  Woong Lee

发明人： Jung-Geun Jee ,  Young-Jin Noh ,  Bon-Young Koo ,  Chul-Sung Kim ,  Hun-Hyeoung Leam ,  Woong Lee

IPC分类号： H01L21/336

CPC分类号： H01L21/3144 ,  H01L21/0217 ,  H01L21/022 ,  H01L21/02238 ,  H01L21/02252 ,  H01L21/02255 ,  H01L21/02332 ,  H01L21/02337 ,  H01L21/0234 ,  H01L21/31662 ,  H01L27/115 ,  H01L27/11521

摘要： In a method of forming an insulation structure, at least one oxide layer is formed on an object by at least one oxidation process, and then at least one nitride layer is formed from the oxide layer by at least one nitration process. An edge portion of the insulation structure may have a thickness substantially the same as that of a central portion of the insulation structure so that the insulation structure may have a uniform thickness and improved insulation characteristics. When the insulation structure is employed as a tunnel insulation layer of a semiconductor device, the semiconductor device may have enhanced endurance and improved electrical characteristics because a threshold voltage distribution of cells in the semiconductor device may become uniform.

摘要翻译： 在形成绝缘结构的方法中，通过至少一个氧化工艺在物体上形成至少一个氧化物层，然后通过至少一个硝化工艺从氧化物层形成至少一个氮化物层。 绝缘结构的边缘部分可以具有与绝缘结构的中心部分的厚度基本相同的厚度，使得绝缘结构可以具有均匀的厚度和改善的绝缘特性。 当采用绝缘结构作为半导体器件的隧道绝缘层时，由于半导体器件中的单元的阈值电压分布可能变得均匀，所以半导体器件可以具有增强的耐久性和改善的电特性。