公开(公告)号：US07769981B2

公开(公告)日：2010-08-03

申请号：US12045844

申请日：2008-03-11

申请人： Chun Gi Lyuh ,  Yil Suk Yang ,  Se Wan Heo ,  Soon Il Yeo ,  Tae Moon Roh ,  Jong Dae Kim ,  Ki Chul Kim ,  Se Hoon Yoo

发明人： Chun Gi Lyuh ,  Yil Suk Yang ,  Se Wan Heo ,  Soon Il Yeo ,  Tae Moon Roh ,  Jong Dae Kim ,  Ki Chul Kim ,  Se Hoon Yoo

IPC分类号： G06F15/80

CPC分类号： G06F15/8007

摘要： Provided is a parallel processor for supporting a floating-point operation. The parallel processor has a flexible structure for easy development of a parallel algorithm involving multimedia computing, requires low hardware cost, and consumes low power. To support floating-point operations, the parallel processor uses floating-point accumulators and a flag for floating-point multiplication. Using the parallel processor, it is possible to process a geometric transformation operation in a 3-dimensional (3D) graphics process at low cost. Also, the cost of a bus width for instructions can be minimized by a partitioned Single-Instruction Multiple-Data (SIMD) method and a method of conditionally executing instructions.

摘要翻译： 提供了一种用于支持浮点运算的并行处理器。 并行处理器具有灵活的结构，便于开发涉及多媒体计算的并行算法，需要较低的硬件成本，并且消耗低功耗。 为了支持浮点运算，并行处理器使用浮点累加器和浮点乘法的标志。 使用并行处理器，可以以低成本在三维（3D）图形处理中处理几何变换操作。 此外，可以通过分区单指令多数据（SIMD）方法和有条件执行指令的方法来最小化用于指令的总线宽度的成本。

公开(公告)号：US08486827B2

公开(公告)日：2013-07-16

申请号：US13262293

申请日：2009-12-30

申请人： Se Hoon Yoo ,  Chang Woo Lee ,  Jun Ki Kim ,  Jeong Han Kim ,  Cheol Hee Kim ,  Young Ki Ko ,  Yue Seon Shin

发明人： Se Hoon Yoo ,  Chang Woo Lee ,  Jun Ki Kim ,  Jeong Han Kim ,  Cheol Hee Kim ,  Young Ki Ko ,  Yue Seon Shin

IPC分类号： H01L21/768

CPC分类号： H01L21/68785 ,  H01L21/68721 ,  H01L21/76898

摘要： A device of filling metal in a through-via-hole formed in a semiconductor wafer and a method of filling metal in a through-via-hole using the same are disclosed. A device of filling metal in a through-via-hole formed in a semiconductor wafer includes a jig base comprising a jig configured to fix the wafer having the through-via-hole formed therein; a upper chamber 120 installed on the jig base; a lower chamber installed under the jig base; a heater installed in the upper chamber, the heater configured to apply heat to filling metal placed on the wafer to melt the filling metal; and a vacuum pump configured to generate pressure difference between the upper chamber and the lower chamber by the pressure of the lower chamber reduced by discharging air of the lower chamber 130 outside, only to fill the melted filling metal in the through-via-hole.

摘要翻译： 公开了一种在半导体晶片中形成的通孔中填充金属的装置以及使用该通孔的贯通孔中填充金属的方法。 在半导体晶片中形成的通孔中填充金属的装置包括夹具基座，其包括夹具，其被配置为固定其中形成有通孔的晶片; 安装在夹具基座上的上腔室120; 安装在夹具底下的下腔室; 安装在所述上部腔室中的加热器，所述加热器构造成对放置在所述晶片上的填充金属施加热量以熔化所述填充金属; 以及真空泵，其构造成通过下部腔室130的空气排出而被下部腔室的压力产生上部腔室和下部腔室之间的压力差，仅将填充金属填充到通孔中。

公开(公告)号：US20120034776A1

公开(公告)日：2012-02-09

申请号：US13262293

申请日：2009-12-30

申请人： Se Hoon Yoo ,  Chang Woo Lee ,  Jun Ki Kim ,  Jeong Han Kim ,  Cheol Hee Kim ,  Young Ki Ko ,  Yue Seon Shin

发明人： Se Hoon Yoo ,  Chang Woo Lee ,  Jun Ki Kim ,  Jeong Han Kim ,  Cheol Hee Kim ,  Young Ki Ko ,  Yue Seon Shin

IPC分类号： H01L21/768 ,  B23K9/04

CPC分类号： H01L21/68785 ,  H01L21/68721 ,  H01L21/76898

摘要： A device of filling metal in a through-via-hole formed in a semiconductor wafer and a method of filling metal in a through-via-hole using the same are disclosed. A device of filling metal in a through-via-hole formed in a semiconductor wafer includes a jig base comprising a jig configured to fix the wafer having the through-via-hole formed therein; a upper chamber 120 installed on the jig base; a lower chamber installed under the jig base; a heater installed in the upper chamber, the heater configured to apply heat to filling metal placed on the wafer to melt the filling metal; and a vacuum pump configured to generate pressure difference between the upper chamber and the lower chamber by the pressure of the lower chamber reduced by discharging air of the lower chamber 130 outside, only to fill the melted filling metal in the through-via-hole.

摘要翻译： 公开了一种在半导体晶片中形成的通孔中填充金属的装置以及使用该通孔的贯通孔中填充金属的方法。 在半导体晶片中形成的通孔中填充金属的装置包括夹具基座，其包括夹具，其被配置为固定其中形成有通孔的晶片; 安装在夹具基座上的上腔室120; 安装在夹具底下的下腔室; 安装在所述上部腔室中的加热器，所述加热器构造成对放置在所述晶片上的填充金属施加热量以熔化所述填充金属; 以及真空泵，其构造成通过下部腔室130的空气排出而被下部腔室的压力产生上部腔室与下部腔室之间的压力差，仅将填充金属填充到通孔中。