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    DEVICE WITH SELF ALIGNED STRESSOR AND METHOD OF MAKING SAME
    5.
    发明申请
    DEVICE WITH SELF ALIGNED STRESSOR AND METHOD OF MAKING SAME 有权
    具有自对准压力器的装置及其制造方法

    公开(公告)号：US20110079820A1

    公开(公告)日：2011-04-07

    申请号：US12572743

    申请日：2009-10-02

    申请人： Kao-Ting Lai ,  Da-Wen Lin ,  Hsien-Hsin Lin ,  Yuan-Ching Peng ,  Chi-Hsi Wu

    发明人： Kao-Ting Lai ,  Da-Wen Lin ,  Hsien-Hsin Lin ,  Yuan-Ching Peng ,  Chi-Hsi Wu

    IPC分类号： H01L29/165 ,  H01L21/30 ,  H01L29/78

    CPC分类号： H01L21/3247 ,  H01L29/66636 ,  H01L29/7848

    摘要： A method includes providing a substrate comprising a substrate material, a gate dielectric film above the substrate, and a first spacer adjacent the gate dielectric film. The spacer has a first portion in contact with a surface of the substrate and a second portion in contact with a side of the gate dielectric film. A recess is formed in a region of the substrate adjacent to the spacer. The recess is defined by a first sidewall of the substrate material. At least a portion of the first sidewall underlies at least a portion of the spacer. The substrate material beneath the first portion of the spacer is reflowed, so that a top portion of the first sidewall of the substrate material defining the recess is substantially aligned with a boundary between the gate dielectric film and the spacer. The recess is filled with a stressor material.

    摘要翻译： 一种方法包括提供包括衬底材料的衬底，在衬底上方的栅极电介质膜和与栅极电介质膜相邻的第一间隔物。 间隔物具有与基底的表面接触的第一部分和与栅极电介质膜的一侧接触的第二部分。 在与衬垫相邻的衬底的区域中形成凹部。 凹部由基底材料的第一侧壁限定。 第一侧壁的至少一部分位于间隔件的至少一部分的下面。 衬垫材料位于衬垫的第一部分下面被回流，使得限定凹陷的衬底材料的第一侧壁的顶部基本上与栅极电介质膜和间隔物之间​​的边界对齐。 凹陷部分填充有压力源材料。

    Device with self aligned stressor and method of making same
    6.
    发明授权
    Device with self aligned stressor and method of making same 有权
    具有自对准应激源的装置及其制造方法

    公开(公告)号：US08404538B2

    公开(公告)日：2013-03-26

    申请号：US12572743

    申请日：2009-10-02

    申请人： Kao-Ting Lai ,  Da-Wen Lin ,  Hsien-Hsin Lin ,  Yuan-Ching Peng ,  Chi-Hsi Wu

    发明人： Kao-Ting Lai ,  Da-Wen Lin ,  Hsien-Hsin Lin ,  Yuan-Ching Peng ,  Chi-Hsi Wu

    IPC分类号： H01L21/8238

    CPC分类号： H01L21/3247 ,  H01L29/66636 ,  H01L29/7848

    摘要： A method includes providing a substrate comprising a substrate material, a gate dielectric film above the substrate, and a first spacer adjacent the gate dielectric film. The spacer has a first portion in contact with a surface of the substrate and a second portion in contact with a side of the gate dielectric film. A recess is formed in a region of the substrate adjacent to the spacer. The recess is defined by a first sidewall of the substrate material. At least a portion of the first sidewall underlies at least a portion of the spacer. The substrate material beneath the first portion of the spacer is reflowed, so that a top portion of the first sidewall of the substrate material defining the recess is substantially aligned with a boundary between the gate dielectric film and the spacer. The recess is filled with a stressor material.

    摘要翻译： 一种方法包括提供包括衬底材料的衬底，在衬底上方的栅极电介质膜和与栅极电介质膜相邻的第一间隔物。 间隔物具有与基底的表面接触的第一部分和与栅极电介质膜的一侧接触的第二部分。 在与衬垫相邻的衬底的区域中形成凹部。 凹部由基底材料的第一侧壁限定。 第一侧壁的至少一部分位于间隔件的至少一部分的下面。 衬垫材料位于衬垫的第一部分下面被回流，使得限定凹陷的衬底材料的第一侧壁的顶部基本上与栅极电介质膜和间隔物之间​​的边界对齐。 凹陷部分填充有压力源材料。