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公开(公告)号：US07871909B1
公开(公告)日：2011-01-18
申请号：US12689677
申请日：2010-01-19
IPC分类号： H01L21/3205 , H01L21/44
CPC分类号： H01L21/76838 , H01L21/0337 , H01L21/0338 , H01L21/32139 , H01L27/105 , H01L27/1052 , H01L27/11517 , Y10S438/947
摘要： Methods for forming patterns having triple the line frequency of a first pattern using only a single spacer are disclosed. For example, the first pattern is formed in a first and a second material using a lithographic process. Sidewall spacers are formed from a third material adjacent to exposed sidewalls of features in the second material. The width of the features in the first pattern in the first material is reduced. For example, the width is reduced to about the target width of features in a final pattern. The width of features in the first pattern in the second material is reduced using remaining portions of the first material as a mask. A second pattern is formed based on remaining portions of the second material and the sidewall spacers. The features in the second pattern may be lines having about ⅓ the width of lines in the first pattern.
摘要翻译： 公开了仅使用单个间隔物形成具有三倍于第一图案的线频率的图案的方法。 例如，使用光刻工艺在第一和第二材料中形成第一图案。 侧壁间隔件由与第二材料中的特征的暴露的侧壁相邻的第三材料形成。 第一材料中第一图案中的特征的宽度减小。 例如，以最终图案将宽度减小到大约特征的目标宽度。 使用第一材料的剩余部分作为掩模来减少第二材料中的第一图案中的特征的宽度。 基于第二材料和侧壁间隔物的剩余部分形成第二图案。 第二图案中的特征可以是具有第一图案中的线的宽度的大约1/3的线。
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公开(公告)号：US08313992B2
公开(公告)日：2012-11-20
申请号：US12897257
申请日：2010-10-04
IPC分类号： H01L21/336 , H01L21/8234 , G03F1/00 , C03C15/00 , C03C25/68 , C23F1/00
CPC分类号： G03F1/36
摘要： A lithography mask includes a plurality of patterning features formed on a mask substrate and a first plurality of sub-resolution assist features (SRAFs) formed substantially perpendicular to the patterning features on the mask substrate.
摘要翻译： 光刻掩模包括形成在掩模基板上的多个图案化特征以及基本上垂直于掩模基板上的图案化特征形成的第一多个次分辨率辅助特征（SRAF）。
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公开(公告)号：US08221943B2
公开(公告)日：2012-07-17
申请号：US12729088
申请日：2010-03-22
CPC分类号： G03F1/36
摘要： A photomask for exposure of a semiconductor wafer using dipole illumination and method of manufacturing the same is disclosed. A method of forming a pattern on a semiconductor using the photomask is also disclosed. The photomask may have an array of islands that are used for printing lines using dipole illumination. The photomask may have sub-resolution assist features (SRAF) to assist in printing the lines. The SRAF may include an array of holes.
摘要翻译： 公开了一种用于使用偶极照明曝光半导体晶片的光掩模及其制造方法。 还公开了使用光掩模在半导体上形成图案的方法。 光掩模可以具有用于使用偶极照明打印线的岛阵列。 光掩模可以具有辅助分辨率辅助特征（SRAF）以帮助印刷线。 SRAF可以包括一组孔。
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公开(公告)号：US08325529B2
公开(公告)日：2012-12-04
申请号：US12813437
申请日：2010-06-10
IPC分类号： G11C16/04
CPC分类号： H01L27/11551 , G11C16/0483 , H01L23/485 , H01L27/11519 , H01L27/11556 , H01L2924/0002 , H01L2924/00
摘要： Bit line connections for non-volatile storage devices and methods for fabricating the same are disclosed. At least two different types of bit line connections may be used between memory cells and bit lines. The different types of bit line connections may be structurally different from each other as follows. One type of bit line connection may include a metal pad between an upper via and lower via. Another type of bit line connection may include an upper via and lower via, but does not include the metal pad. Three rows of bit line connections may be used to relax the pitch. For example, two rows of bit line connections on the outside may have the metal pad, whereas bit line connections in the middle row do not have the metal pad.
摘要翻译： 公开了用于非易失性存储装置的位线连接及其制造方法。 可以在存储器单元和位线之间使用至少两种不同类型的位线连接。 不同类型的位线连接可以在结构上彼此不同，如下所述。 一种类型的位线连接可以包括在上通孔和下通孔之间的金属垫。 另一种类型的位线连接可以包括上通孔和下通孔，但不包括金属垫。 可以使用三排位线连接来放松间距。 例如，外部的两行位线连接可以具有金属焊盘，而中间行中的位线连接不具有金属焊盘。
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公开(公告)号：US20120083124A1
公开(公告)日：2012-04-05
申请号：US12897257
申请日：2010-10-04
IPC分类号： H01L21/302 , G03F7/20 , G03F1/00
CPC分类号： G03F1/36
摘要： A lithography mask includes a plurality of patterning features formed on a mask substrate and a first plurality of sub-resolution assist features (SRAFs) formed substantially perpendicular to the patterning features on the mask substrate.
摘要翻译： 光刻掩模包括形成在掩模基板上的多个图案化特征以及基本上垂直于掩模基板上的图案化特征形成的第一多个次分辨率辅助特征（SRAF）。
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公开(公告)号：US20110229805A1
公开(公告)日：2011-09-22
申请号：US12729088
申请日：2010-03-22
IPC分类号： G03F1/00 , H01L21/027
CPC分类号： G03F1/36
摘要： A photomask for exposure of a semiconductor wafer using dipole illumination and method of manufacturing the same is disclosed. A method of forming a pattern on a semiconductor using the photomask is also disclosed. The photomask may have an array of islands that are used for printing lines using dipole illumination. The photomask may have sub-resolution assist features (SRAF) to assist in printing the lines. The SRAF may include an array of holes.
摘要翻译： 公开了一种用于使用偶极照明曝光半导体晶片的光掩模及其制造方法。 还公开了使用光掩模在半导体上形成图案的方法。 光掩模可以具有用于使用偶极照明打印线的岛阵列。 光掩模可以具有辅助分辨率辅助特征（SRAF）以帮助印刷线。 SRAF可以包括一组孔。
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公开(公告)号：US20110026327A1
公开(公告)日：2011-02-03
申请号：US12813437
申请日：2010-06-10
CPC分类号： H01L27/11551 , G11C16/0483 , H01L23/485 , H01L27/11519 , H01L27/11556 , H01L2924/0002 , H01L2924/00
摘要： Bit line connections for non-volatile storage devices and methods for fabricating the same are disclosed. At least two different types of bit line connections may be used between memory cells and bit lines. The different types of bit line connections may be structurally different from each other as follows. One type of bit line connection may include a metal pad between an upper via and lower via. Another type of bit line connection may include an upper via and lower via, but does not include the metal pad. Three rows of bit line connections may be used to relax the pitch. For example, two rows of bit line connections on the outside may have the metal pad, whereas bit line connections in the middle row do not have the metal pad.
摘要翻译： 公开了用于非易失性存储装置的位线连接及其制造方法。 可以在存储器单元和位线之间使用至少两种不同类型的位线连接。 不同类型的位线连接可以在结构上彼此不同，如下所述。 一种类型的位线连接可以包括在上通孔和下通孔之间的金属垫。 另一种类型的位线连接可以包括上通孔和下通孔，但不包括金属垫。 可以使用三排位线连接来放松间距。 例如，外部的两行位线连接可以具有金属焊盘，而中间行中的位线连接不具有金属焊盘。
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