公开(公告)号：US5598317A

公开(公告)日：1997-01-28

申请号：US597785

申请日：1996-02-07

申请人： Ciaran Hanrahan ,  Andrew P. Stack

发明人： Ciaran Hanrahan ,  Andrew P. Stack

IPC分类号： H01L21/02 ,  H01L21/3105 ,  H01L21/3213 ,  H01G4/005 ,  H01G4/06

CPC分类号： H01L28/10 ,  H01L21/3105 ,  H01L21/3213 ,  Y10T29/435

摘要： A semiconductor capacitor used to test for contaminants in a fabrication line is created by: forming a layer of insulating material on a semiconductor substrate, forming a layer of conductive thin film on the layer of insulating material, and laser patterning an area of the conductive thin film. Laser patterning is performed by applying the laser along the outer boundary of the area to be patterned to energetically remove the conductive thin film along this boundary.

摘要翻译： 用于测试制造线中的污染物的半导体电容器是通过在半导体衬底上形成绝缘材料层，在绝缘材料层上形成导电薄膜层，以及激光构图导电薄膜 电影。 通过沿着要构图的区域的外边界应用激光来沿着该边界能量地去除导电薄膜来进行激光图案化。

公开(公告)号：US5585016A

公开(公告)日：1996-12-17

申请号：US94676

申请日：1993-07-20

申请人： Ciaran Hanrahan ,  Andrew P. Stack

发明人： Ciaran Hanrahan ,  Andrew P. Stack

IPC分类号： H01L21/02 ,  H01L21/3105 ,  H01L21/3213 ,  B23K26/00 ,  H01G7/00

CPC分类号： H01L28/10 ,  H01L21/3105 ,  H01L21/3213 ,  Y10T29/435

摘要： A semiconductor capacitor used to test for contaminants in a fabrication line is created by: forming a layer of insulating material on a semiconductor substrate, forming a layer of conductive thin film on the layer of insulating material, and laser patterning an area of the conductive thin film. Laser patterning is performed by applying the laser along the outer boundary of the area to be patterned to energetically remove the conductive thin film along this boundary.

摘要翻译： 用于测试制造线中的污染物的半导体电容器是通过在半导体衬底上形成绝缘材料层，在绝缘材料层上形成导电薄膜层，以及激光构图导电薄膜 电影。 通过沿着要构图的区域的外边界应用激光来沿着该边界能量地去除导电薄膜来进行激光图案化。

公开(公告)号：US5146098A

公开(公告)日：1992-09-08

申请号：US681807

申请日：1991-04-05

申请人： Andrew P. Stack

发明人： Andrew P. Stack

IPC分类号： H01J37/317

CPC分类号： H01J37/3171 ,  H01J2237/31705

摘要： The present invention is directed to systems and methods for accurately detecting the presence of particles, such as contaminants and residual gases in an end station during wafer processing. In a preferred embodiment, the type and amount of each contaminant can be determined by spectrally decomposing in situ light generated during wafer processing to detect characteristics of potential contaminants and/or residual gases. Characteristics which can be used to identify the presence of contaminants include abnormal wavelength, frequency and/or intensity of energy present during wafer processing.

摘要翻译： 本发明涉及用于在晶片处理期间精确地检测端站中的颗粒（例如污染物和残余气体）的存在的系统和方法。 在一个优选的实施方案中，每种污染物的类型和量可以通过光谱分解在晶片处理期间产生的原位光来确定，以检测潜在污染物和/或残余气体的特性。 可用于识别污染物存在的特征包括在晶片处理期间存在的能量的异常波长，频率和/或强度。